Results 51 to 60 of about 5,430 (263)
Evolution of OLED Lamination Technology With Development of Display Form Factors
This review evaluates the evolution of organic light‐emitting diode (OLED) lamination technologies alongside advancing display form factors. It contrasts optically clear adhesives and resins, highlighting uniformity control for rigid screens, bubble‐free optimization for bended architectures, and visible‐light curing for foldable layers.
Kwan‐Young Han, Ji‐Hoon Park
wiley +1 more source
Physical Origin of Temperature Induced Activation Energy Switching in Electrically Conductive Cement
The temperature‐induced Arrhenius activation energy switching phenomenon of electrical conduction in electrically conductive cement originates from structural degradation within the biphasic ionic‐electronic conduction architecture and shows percolation‐governed characteristics: pore network opening dominates the low‐percolation regime with downward ...
Jiacheng Zhang +7 more
wiley +1 more source
A Low-Power Read-Decoupled Radiation-Hardened 16T SRAM for Space Applications
Advancements in CMOS technology have significantly reduced both transistor dimensions and inter-device spacing, leading to a lower critical charge at sensitive nodes.
Sung-Jun Lim, Sung-Hun Jo
doaj +1 more source
Radiation Hardened Digital Direct Synthesizer With CORDIC for Spaceborne Applications
The Coordinate Rotation Digital Computer algorithm (CORDIC) is a simple mechanism to compute a set of elementary functions, such as trigonometric functions, using fixed-point devices.
Luis Alberto Aranda +4 more
doaj +1 more source
New High‐Tc Charge‐Transfer Multiferroicity in the Quasi‐2D Antiferromagnet CrSbS3
ABSTRACT Low‐dimensional magnets, particularly 2D systems, offer a rich platform for realizing unconventional multiferroic mechanisms, especially when multiple polarization channels coexist. In the quasi‐2D antiferromagnet CrSbS3, which crystallizes in the centrosymmetric orthorhombic space group Pnma and orders magnetically at TN ≈ 90 K, two ...
Hung‐Cheng Wu +17 more
wiley +1 more source
A New Type of Si-Based MOSFET for Radiation Reinforcement
This paper thoroughly analyses the role of drift in the sensitive region in the single-event effect (SEE), with the aim of enhancing the single-particle radiation resistance of N-type metal-oxide semiconductor field-effect transistors (MOSFETs).
Weifeng Liu +3 more
doaj +1 more source
Radiation Hardening of CMOS Microelectronics [PDF]
A unique methodology, silicon transfer to arbitrary substrates, has been developed under this program and is being investigated as a technique for significantly increasing the radiation insensitivity of limited quantities of conventional silicon microelectronic circuits.
McCarthy, A., Sigmon, T. W.
openaire +2 more sources
A reservoir‐guided silver‐nanoparticle soldering strategy is developed for bending‐resistant 3D graphene–metal heterojunctions. Controlled hot‐plate evaporation confines conductive ink within the metal reservoir, suppressing spreading and protecting the LIG interface from deformation‐induced fracture.
Saeyoung Park +5 more
wiley +1 more source
Application of Materials in Radiation Hardening
Radiation shielding is an imperative as radiation can be serious concern within in such environment, where this environment can be either natural or man-made. The natural radiation source like solar wind that is consisting of Electron, Gamma, Protons, Neutrons, or Van Allen Belt, etc.
openaire +1 more source
We report photostable, photoluminescent deep eutectic solvents (DESs) powered by in situ‐formed zero‐dimensional (0D) halometallates. Stabilized by microenvironment‐controlling hydrogen bond acceptor (HBA) and donor (HBD) networks, these DESs exhibit vibrant, metal ion‐tunable emission (PLQY = 60.2%).
Jeesu Moon +4 more
wiley +1 more source

