Results 31 to 40 of about 838,261 (308)

Radiation induced oscillatory Hall effect in high mobility GaAs/AlGaAs devices [PDF]

, 2004
We examine the radiation induced modification of the Hall effect in high mobility GaAs/AlGaAs devices that exhibit vanishing resistance under microwave excitation.
A.A. Koulakov, A.C. Durst, A.V. Andreev, D.C. Tsui, F.S. Bergeret, I.A. Dmitriev, J. H. Smet, J. Shi, J.C. Phillips, K. von Klitzing, M.A. Zudov, M.E. Cage, R. G. Mani, R.G. Mani, R.G. Mani, T. Ando, V. Narayanamurti, V. Ryzhii, V. Umansky, V.I. Ryzhii, W. B. Johnson, X.L. Lei   +21 more
core   +2 more sources

Understanding cisplatin resistance using cellular models [PDF]

, 2007
Many mechanisms of cisplatin resistance have been proposed from studies of cellular models of resistance including changes in cellular drug accumulation, detoxification of the drug, inhibition of apoptosis and repair of the DNA adducts.
Davey, Mary W., Stordal, Britta
core   +2 more sources

Microwave photoresponse in the 2D electron system caused by intra-Landau level transitions

, 2004
The influence of microwave radiation on the DC-magnetoresistance of 2D-electrons is studied in the regime beyond the recently discovered zero resistance states when the cyclotron frequency exceeds the radiation frequency.
A. L. Zakharov, A. L. Zakharov, J. H. Smet, K. von Klitzing, S. I. Dorozhkin, S. I. Dorozhkin, V. B. Shikin, V. I. Ryzhii, V. I. Ryzhii, V. I. Ryzhii, V. I. Ryzhii, V. Umansky   +11 more
core   +1 more source

Transport equation for 2D electron liquid under microwave radiation plus magnetic field and the Zero Resistance State [PDF]

, 2005
A general transport equation for the center of mass motion is constructed to study transports of electronic system under uniform magnetic field and microwave radiation.
Lixin Dai, Tai-Kai Ng, X. L. Lei
core   +1 more source

Multiple and virtual photon processes in radiation-induced magnetoresistance oscillations in two-dimensional electron systems

, 2006
Recently discovered new structures and zero-resistance states outside the well-known oscillations are demonstrated to arise from multiphoton assisted processes, by a detailed analysis of microwave photoresistance in two-dimensional electron systems under
Ryzhii V. I., Ryzhii V. I., S. Y. Liu, X. L. Lei   +3 more
core   +1 more source

Influence of gamma radiation on the electrical and mechanical properties of on-board systems cables

Electrical engineering & Electromechanics
Introduction. Electrical and fiber-optic cables of on-board systems for transmitting monitoring, control and communication signals are increasingly used in nuclear power plants, aircraft systems and military applications.
G. V. Bezprozvannych, I. A. Pushkar
doaj   +1 more source

Integrated double-sided silicon microstrip detectors [PDF]

Tekhnologiya i Konstruirovanie v Elektronnoi Apparature, 2011
The problems of design, technology and manufacturing double-sided silicon microstrip detectors using standard equipment production line in mass production of silicon integrated circuits are considered.
Perevertailo V. L.
doaj  

microRNAs identified in prostate cancer: Correlative studies on response to ionizing radiation

Molecular Cancer, 2020
As the most frequently diagnosed non-skin cancer in men and a leading cause of cancer-related death, understanding the molecular mechanisms that drive treatment resistance in prostate cancer poses a significant clinical need.
Maureen Labbé, Christianne Hoey, Jessica Ray, Vincent Potiron, Stéphane Supiot, Stanley K. Liu, Delphine Fradin   +6 more
doaj   +1 more source

Proton pump inhibitors and sensitization of cancer cells to radiation therapy

Frontiers in Oncology, 2022
This review article outlines six molecular pathways that confer resistance of cancer cells to ionizing radiation, and describes how proton pump inhibitors (PPIs) may be used to overcome radioresistance induced by alteration of one or more of these ...
Kassidy A. Hebert, Kassidy A. Hebert, Mark D. Bonnen, Yohannes T. Ghebre, Yohannes T. Ghebre, Yohannes T. Ghebre   +5 more
doaj   +1 more source

Increasing the radiation resistance of single-crystal silicon epitaxial layers

Tekhnologiya i Konstruirovanie v Elektronnoi Apparature, 2014
The authors investigate the possibility of increasing the radiation resistance of silicon epitaxial layers by creating radiation defects sinks in the form of dislocation networks of the density of 109–1012 m–2.
Sh. D. Kurmashev, O. A. Kulinich, G. I. Brusenskaya, A. V. Verem’eva   +3 more
doaj   +1 more source