Results 131 to 140 of about 1,437 (189)

Oxide Semiconductor for Advanced Memory Architectures: Atomic Layer Deposition, Key Requirement and Challenges. [PDF]

Nanomicro Lett
Lee CH, Ryu SH, Hwang T, Kim SH, Kim YS, Park JS.   +5 more
europepmc   +1 more source

Wordline Input Bias Scheme for Neural Network Implementation in 3D-NAND Flash. [PDF]

Biomimetics (Basel)
Hwang H, Kim G, Yu D, Kim H.
europepmc   +1 more source

Design of CMOS-memristor hybrid synapse and its application for noise-tolerant memristive spiking neural network. [PDF]

Front Neurosci
Lim JG, Lee SM, Park SJ, Kwak JY, Jeong Y, Kim J, Lee S, Park J, Hwang GW, Lee KS, Park S, Ju BK, Jang HJ, Park JK, Kim I.   +14 more
europepmc   +1 more source

Ferroelectric NAND for efficient hardware bayesian neural networks. [PDF]

Nat Commun
Song M, Koo RH, Kim J, Han CH, Yim J, Ko J, Yoo S, Choe DH, Kim S, Shin W, Kwon D.   +10 more
europepmc   +1 more source

Oxide induced degradation in MoS2 Field-Effect Transistors

Ducry F, Troeye B, Dossena M, Luisier M, Pourtois G, Afzalian A.   +5 more
europepmc   +1 more source

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Random telegraph noise (RTN) in scaled RRAM devices

2013 IEEE International Reliability Physics Symposium (IRPS), 2013
The random telegraph noise (RTN) related read instability in resistive random access memory (RRAM) is evaluated by employing the RTN peak-to-peak (P-p) amplitude as a figure of merit (FoM). Variation of the FoM value over multiple set/reset cycles is found to follow the log-normal distribution.
D. Veksler, G. Bersuker, VANDELLI, LUCA, PADOVANI, ANDREA, LARCHER, Luca, A. Muraviev, B. Chakrabarti, E. Vogel, D. C. Gilmer, P. D. Kirsch   +9 more
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Complex Random Telegraph Noise (RTN): What Do We Understand?

2018 IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA), 2018
As the generally-accepted simple understanding, the random telegraph noise (RTN) induced by a single trap is explained by the “normal” two-state trap model, and the RTNs caused by two or more traps in one device are regarded as the independent superposition effect of these traps. While in real cases, both the above points cannot illustrate many complex
Runsheng Wang, Shaofeng Guo, Zexuan Zhang, Jibin Zou, Dongyuan Mao, Ru Huang   +5 more
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Deep understanding of random telegraph noise (RTN) effects on SRAM stability

2016 International Symposium on VLSI Technology, Systems and Application (VLSI-TSA), 2016
In this paper, multi-phonon transition model of RTN in FinFETs with statistical distribution is integrated into industry-standard BSIM-CMG, and read stability of SRAM is thoroughly examined. Different tendencies of SRAM failure probability plateau caused by RTN are found, which reflect real circuit operation situations.
Dongyuan Mao, Shaofeng Guo, Runsheng Wang, Mulong Luo, Ru Huang   +4 more
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A simple method to identify metastable states in random telegraph noise (RTN)

2017 IEEE 24th International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA), 2017
In this paper, a new and simple method named Weibull criterion is proposed to identify whether metastable states occur in single random telegraph noise (RTN), which has been verified by both simulation and experiment results. It is helpful for comprehensive understanding of trap properties and providing a direct evidence of oxide traps with multiple ...
Zhenghan Lin, Shaofeng Guo, Runsheng Wang, Dongyuan Mao, Ru Huang   +4 more
openaire   +1 more source