Results 151 to 160 of about 1,457 (174)

Methodology for the statistical evaluation of the effect of random telegraph noise (RTN) on RRAM characteristics

2012 International Electron Devices Meeting, 2012
We introduce a figure of merit (FoM) to quantify RRAM read current instability, a complex multi-level RTN-like signal, generally observed in read current. Log(FoM) follows a normal statistical distribution describing the probability of occurrence of a read current fluctuation of a given amplitude.
D. Veksler, G. Bersuker, B. Chakrabarti, E. Vogel, S. Deora, K. Matthews, D. C. Gilmer, H.-F. Li, S. Gausepohl, P. D. Kirsch   +9 more
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Impacts of random telegraph noise (RTN) on the Energy-Delay tradeoffs of logic circuits

2016 China Semiconductor Technology International Conference (CSTIC), 2016
In this paper, the impacts of random telegraph noise (RTN) on delay and energy of digital logic circuits are studied. The conventional method of extracting logic gate delay is found inaccurate due to the bias dependency of RTN amplitude. Thus an appropriate measuring strategy is proposed, based on which the impact of single RTN on circuit delay is ...
Yang Zhang, Xiaobo Jiang, Junyao Wang, Shaofeng Guo, Yichen Fang, Runsheng Wang, Mulong Luo, Ru Huang   +7 more
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Analysis of Random Telegraph Noise (RTN) at Near-Threshold Operation by Measuring 154k Ring Oscillators

2019 IEEE International Reliability Physics Symposium (IRPS), 2019
We present measurement results of delay fluctuations induced by random telegraph noise (RTN) from 154k 7-stage ring oscillators (RO). Measurement results are obtained from test chips fabricated in a 65-nm Silicon-On-Thin-Buried-Oxide process. Measurement results reveal that RTN-induced frequency fluctuation which corresponds to the underlying threshold
A. K. M. Mahfuzul Islam, Ryota Shimizu, Hidetoshi Onodera   +2 more
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Statistical comparison of random telegraph noise (RTN) in bulk and fully depleted SOI MOSFETs

Ulis 2011 Ultimate Integration on Silicon, 2011
Random telegraph noise (RTN) in bulk and fully depleted (FD) SOI MOSFETs are measured by device matrix array (DMA) TEG for statistical analysis. It is found that, in the tail part of the distribution, threshold voltage change by RTN (ΔV th ) in FD SOI MOSFETs is smaller than that in Bulk MOSFETs.
Jun Nishimura, Takuya Saraya, Toshiro Hiramoto   +2 more
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AC Random Telegraph Noise (AC RTN) in Nanoscale MOS Devices

2017
Metal oxide semiconductor thin-film transistors (TFTs) have been recognized as the most promising technology in the field of flexible electronics and flat-panel displays because of their high mobility, low-temperature fabrication process, and spatial uniformity of device characteristics.
Jibin Zou, Shaofeng Guo, Ru Huang, Runsheng Wang   +3 more
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Random telegraph noise (RTN) in 14nm logic technology: High volume data extraction and analysis

2016 IEEE Symposium on VLSI Technology, 2016
With continued scaling of CMOS technology, numerous concerns have been raised about random telegraph noise (RTN) possibly matching or exceeding the random process variation in threshold voltage (V th )[1], [2]. These studies are usually limited by the small sample size of the measurements, relying on modeling for projecting to high sigma. In this work,
S. Dongaonkar, M. D. Giles, A. Kornfeld, B. Grossnickle, J. Yoon   +4 more
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On the AC random telegraph noise (RTN) in MOS devices: An improved multi-phonon based model

2012 IEEE 11th International Conference on Solid-State and Integrated Circuit Technology, 2012
As devices scaling down into nanometer region, the random telegraph noise (RTN) has become a significant issue for device variability and reliability, which has been extensively studied at DC conditions and recently also at AC conditions. The nonradiative multiphonon (NMP) theory has been introduced to describe the statistical characteristics of DC RTN;
Nanbo Gong, Runsheng Wang, Changze Liu, Jibin Zou, Ru Huang   +4 more
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Evaluation of SRAM V_min shift induced by random telegraph noise (RTN): physical understanding and prediction method

2018 IEEE International Symposium on Circuits and Systems (ISCAS), 2018
In this paper, the minimum operation voltage (Vmin) shifts of static random access memory (SRAM) induced by random telegraph noises (RTN) are extracted from accurate transient simulation results, including the impacts of both strong and weak coupling RTNs.
Shaofeng Guo, Zhenghan Lin, Runsheng Wang, Dongyuan Mao, Yangyuan Wang, Ru Huang 0001   +5 more
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Extracting accurate position and energy level of oxide trap generating random telegraph noise(RTN) in recessed channel MOSFET's

2010 Proceedings of the European Solid State Device Research Conference, 2010
In this paper, we have proposed an extraction method to find accurate oxide trap locations and energy level in recessed channel structure such as SRCAT. Analytical models for poly depletion effect and the surface potential variation in the cylindrical coordinate were derived and applied to DRAM SRCAT.
Sunyoung Park, Sanghoon Lee, Yeonsung Kang, Byung-Gook Park, Jong-Ho Lee, Jooyoung Lee, Gyoyoung Jin, Hyungcheol Shin   +7 more
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Characterization RTN(Random Telegraph Noise) Generated by Process and Cycling Stress Induced Traps in 26nm NAND Flash Memory

Extended Abstracts of the 2012 International Conference on Solid State Devices and Materials, 2012
We characterized normalized noise power density (S I/I BL 2) and bit-line (BL) current fluctuation (ΔI BL) using traps generated applying cycling stress in 26 nm NAND flash memory. The ΔI BL, S I/I BL 2, and
Bong-Su Jo, Ho-Jung Kang, Sung-Min Joe, Min-Kyu Jeong, Kyung-Rok Han, Sung-Kye Park, Byung-Gook Park, Jong-Ho Lee   +7 more
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