Results 131 to 140 of about 1,457 (174)

Oxide Semiconductor for Advanced Memory Architectures: Atomic Layer Deposition, Key Requirement and Challenges. [PDF]

Nanomicro Lett
Lee CH, Ryu SH, Hwang T, Kim SH, Kim YS, Park JS.   +5 more
europepmc   +1 more source

Wordline Input Bias Scheme for Neural Network Implementation in 3D-NAND Flash. [PDF]

Biomimetics (Basel)
Hwang H, Kim G, Yu D, Kim H.
europepmc   +1 more source

Design of CMOS-memristor hybrid synapse and its application for noise-tolerant memristive spiking neural network. [PDF]

Front Neurosci
Lim JG, Lee SM, Park SJ, Kwak JY, Jeong Y, Kim J, Lee S, Park J, Hwang GW, Lee KS, Park S, Ju BK, Jang HJ, Park JK, Kim I.   +14 more
europepmc   +1 more source

Ferroelectric NAND for efficient hardware bayesian neural networks. [PDF]

Nat Commun
Song M, Koo RH, Kim J, Han CH, Yim J, Ko J, Yoo S, Choe DH, Kim S, Shin W, Kwon D.   +10 more
europepmc   +1 more source

Oxide induced degradation in MoS2 Field-Effect Transistors

Ducry F, Troeye B, Dossena M, Luisier M, Pourtois G, Afzalian A.   +5 more
europepmc   +1 more source

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Random telegraph noise (RTN) in scaled RRAM devices

2013 IEEE International Reliability Physics Symposium (IRPS), 2013
The random telegraph noise (RTN) related read instability in resistive random access memory (RRAM) is evaluated by employing the RTN peak-to-peak (P-p) amplitude as a figure of merit (FoM). Variation of the FoM value over multiple set/reset cycles is found to follow the log-normal distribution.
Andrea Padovani, Luca Larcher
exaly   +2 more sources

Too noisy at the nanoscale? — The rise of random telegraph noise (RTN) in devices and circuits

2016 IEEE International Nanoelectronics Conference (INEC), 2016
This paper gives an outline of our recent findings on the random telegraph noise (RTN) in nanoscale MOS devices and circuits.
Runsheng Wang
exaly   +2 more sources

A simple method to identify metastable states in random telegraph noise (RTN)

2017 IEEE 24th International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA), 2017
In this paper, a new and simple method named Weibull criterion is proposed to identify whether metastable states occur in single random telegraph noise (RTN), which has been verified by both simulation and experiment results. It is helpful for comprehensive understanding of trap properties and providing a direct evidence of oxide traps with multiple ...
Zhenghan Lin, Shaofeng Guo, Runsheng Wang, Dongyuan Mao, Ru Huang   +4 more
exaly   +2 more sources

Investigation on the amplitude coupling effect of random telegraph noise (RTN) in nanoscale FinFETs

2018 IEEE International Reliability Physics Symposium (IRPS), 2018
In this paper, based on the complex random telegraph noise (RTN) data in FinFETs, the impacts of the trap coupling effect on RTN amplitude are studied statistically. The coupling effect is found to be enhanced by the double-side coupling mechanism in FinFETs.
Shaofeng Guo, Zhenghan Lin, Runsheng Wang, Zexuan Zhang, Zhe Zhang 0006, Yangyuan Wang, Ru Huang 0001   +6 more
exaly   +2 more sources