Results 141 to 150 of about 1,457 (174)

Complex Random Telegraph Noise (RTN): What Do We Understand?

2018 IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA), 2018
As the generally-accepted simple understanding, the random telegraph noise (RTN) induced by a single trap is explained by the “normal” two-state trap model, and the RTNs caused by two or more traps in one device are regarded as the independent superposition effect of these traps. While in real cases, both the above points cannot illustrate many complex
Runsheng Wang, Shaofeng Guo, Zexuan Zhang, Jibin Zou, Dongyuan Mao, Ru Huang   +5 more
exaly   +2 more sources

Dependence on an oxide trap’s location of random telegraph noise (RTN) in GIDL current of n-MOSFET

Solid-State Electronics, 2014
Abstract We investigated the variation of random telegraph noise (RTN) in gate-induced drain leakage (GIDL) current by changing location of a trap inside the gate oxide of n type metal-oxide semiconductor field effect transistor ( n -MOSFET). The dependence on drain to gate bias was then considered.
Quan Nguyen Gia, Sung-Won Yoo, Hyunseul Lee, Hyungcheol Shin   +3 more
exaly   +2 more sources

Investigation on the amplitude distribution of random telegraph noise (RTN) in nanoscale MOS devices

2016 IEEE International Nanoelectronics Conference (INEC), 2016
In this paper, the amplitude (ΔI d /I d ) distribution of random telegraph noise (RTN) induced by each trap in nanoscale devices is investigated based on the statistical experimental results. The RTN states are extracted through the proposed Gaussian mixture model (GMM).
Zexuan Zhang, Shaofeng Guo, Xiaobo Jiang, Runsheng Wang, Ru Huang, Jibin Zou   +5 more
exaly   +2 more sources

Comparison of statistical distributions of random telegraph noise (RTN) in subthreshold region and strong inversion region

2014 Silicon Nanoelectronics Workshop (SNW), 2014
Statistical distributions of amplitude (ΔId) and Vth shift (ΔVth) of random telegraph noise (RTN) are analyzed by measuring 9000 transistors at various gate voltage. It is found that, while both worst ΔId and ΔVth are larger in subthreshold region than in strong inversion, median ΔVth is larger in strong inversion.
Hitoshi Ohno, Tomoko Mizutani, Takuya Saraya, Toshiro Hiramoto   +3 more
exaly   +2 more sources

Too Noisy at the Bottom? —Random Telegraph Noise (RTN) in Advanced Logic Devices and Circuits

2018 IEEE International Electron Devices Meeting (IEDM), 2018
In this paper, the recent advances of our studies on RTN are presented from device, circuit, and EDA perspectives. RTN characteristics in FinFETs are investigated and compared with planar devices. The AC RTN effect is discussed for understanding RTN impacts in practical circuit applications. Then, a new and efficient circuit simulation platform for RTN
Runsheng Wang, Shaofeng Guo, Zhe Zhang, Qingxue Wang, Dehuang Wu, Joddy Wang, Ru Huang   +6 more
exaly   +2 more sources

New observations on the AC random telegraph noise (AC RTN) in nano-MOSFETs

Proceedings of Technical Program of 2012 VLSI Technology, System and Application, 2012
The random telegraph noise (RTN) is becoming a critical issue for variability and reliability in nanoscale MOSFETs. Since devices actually operate under AC signals in digital circuits, it is essential to investigate the AC RTN at dynamic voltage, instead of traditional DC RTN at fixed gate bias.
null Runsheng Wang, null Jibin Zou, null Xiaoqing Xu, null Changze Liu, null Jinhua Liu, null Hanming Wu, null Yangyuan Wang, null Ru Huang   +7 more
exaly   +2 more sources

OMI/TMI-based Modeling and Fast Simulation of Random Telegraph Noise (RTN) in Advanced Logic Devices and Circuits

2019 IEEE 13th International Conference on ASIC (ASICON), 2019
This paper presents the recent advances of our new solution for accurate compact modeling and fast circuit simulation of random telegraph noise (RTN). The model and simulation flow has been implemented in HSPICE using OMI/TMI (CMC open model interface/TSMC model interface). This platform is helpful for the robust circuit design against RTN.
Runsheng Wang, Zhe Zhang 0006, Shaofeng Guo, Qingxue Wang, Dehuang Wu, Joddy Wang, Ru Huang 0001   +6 more
exaly   +2 more sources

On the physical modeling of random telegraph noise (RTN) amplitude in nanoscale MOSFETs: From ideal to statistical devices

2017 International Symposium on VLSI Technology, Systems and Application (VLSI-TSA), 2017
In this paper, an improved “hole in the inversion layer” (HIL) model for amplitude of random telegraph noise (RTN) is proposed with a deeper insight into the physical meaning of “hole” radius (key parameter of HIL model). The new physical definition of “hole” radius is well consistent with TCAD simulations for traps at different locations under various
null Zexuan Zhang, null Shaofeng Guo, null Zhe Zhang, null Runsheng Wang, null Ru Huang   +4 more
exaly   +2 more sources

Extraction of trap energy and location from random telegraph noise in gate leakage current (Ig RTN) of metal–oxide semiconductor field effect transistor (MOSFET)

Solid-State Electronics, 2010
Abstract Study of random telegraph noise in gate leakage current ( I g RTN) through thin gate oxide (2.6 nm) as well as drain current random telegraph noise ( I d RTN) has been conducted in MOSFET. RTN having two discrete current levels was observed in gate leakage current.
Byung-Gook Park
exaly   +2 more sources

Deep understanding of random telegraph noise (RTN) effects on SRAM stability

2016 International Symposium on VLSI Technology, Systems and Application (VLSI-TSA), 2016
In this paper, multi-phonon transition model of RTN in FinFETs with statistical distribution is integrated into industry-standard BSIM-CMG, and read stability of SRAM is thoroughly examined. Different tendencies of SRAM failure probability plateau caused by RTN are found, which reflect real circuit operation situations.
Dongyuan Mao, Shaofeng Guo, Runsheng Wang, Mulong Luo, Ru Huang   +4 more
openaire   +1 more source