Results 161 to 170 of about 1,457 (174)

The observation of trapping and detrapping effects in high-k gate dielectric MOSFETs by a new gate current Random Telegraph Noise (IG-RTN) approach

2008 IEEE International Electron Devices Meeting, 2008
A new method, called gate current random telegraph noise (IG RTN), was developed to analyze the oxide quality and reliability of high-k gate dielectric MOSFETs. First, a single electron trapping/detrapping from process induced trap in nMOSFET was observed and the associated physical mechanism was proposed.
C. M. Chang, Steve S. Chung, Y. S. Hsieh, L. W. Cheng, C. T. Tsai, G. H. Ma, S. C. Chien, S. W. Sun   +7 more
openaire   +1 more source

A Novel Encrypted Computing-in-Memory (eCIM) by Implementing Random Telegraph Noise (RTN) as Keys Based on 55 nm NOR Flash Technology

IEEE Electron Device Letters, 2022
Yang Feng, Jixuan Wu, Xuepeng Zhan, Jing Liu, Zhaohui Sun, Junyu Zhang, Masaharu Kobayashi, Jiezhi Chen   +7 more
openaire   +1 more source

New Insights into the Random Telegraph Noise (RTN) in FinFETs at Cryogenic Temperature

2024 IEEE International Reliability Physics Symposium (IRPS)
Zirui Wang, Haoran Wang, Yuxiao Wang, Zixuan Sun, Lang Zeng, Runsheng Wang, Ru Huang 0001   +6 more
openaire   +1 more source

Impact of Random Telegraph Noise (RTN) on Future Memory (Invited)

Extended Abstracts of the 2008 International Conference on Solid State Devices and Materials, 2008
openaire   +1 more source

Modeling of Random Telegraph Noise under circuit operation — Simulation and measurement of RTN-induced delay fluctuation

2011 12th International Symposium on Quality Electronic Design, 2011
Kyosuke Ito, Takashi Matsumoto, Shinichi Nishizawa, Hiroki Sunagawa, Kazutoshi Kobayashi, Hidetoshi Onodera   +5 more
openaire   +1 more source

New high resolution Random Telegraph Noise (RTN) characterization method for resistive RAM

Solid-State Electronics, 2016
Mireia Bargallo Gonzalez, Rosana Rodriguez, Montserrat Nafria   +2 more
exaly  

Voltage-dependent random telegraph noise (RTN) in HfOx resistive RAM

2014
BALATTI, SIMONE, AMBROGIO, STEFANO, Cubeta, Antonio, Calderoni, Alessandro, Ramaswamy, Nirmal, IELMINI, DANIELE   +5 more
openaire   +1 more source

Voltage-dependent random telegraph noise (RTN) in HfO<inf>x</inf> resistive RAM

2014 IEEE International Reliability Physics Symposium, 2014
Simone Balatti, Stefano Ambrogio, Antonio Cubeta, Alessandro Calderoni, Nirmal Ramaswamy, Daniele Ielmini   +5 more
openaire   +1 more source

Characterization of Oxide Traps in 28 nm nMOSFETs with Different Uniaxial Tensile Stress by Utilizing Random Telegraph Noise (RTN)

Extended Abstracts of the 2012 International Conference on Solid State Devices and Materials, 2012
B. C. Wang, S. L. Wu, C. Y. Wu, C. W. Huang, T. Y. Lu, P. C. Huang, S. J. Chang   +6 more
openaire   +1 more source

Characterization of Oxide Traps in 28 nm pMOSFETs with Σ-Shaped SiGe-S/D by Utilizing Random Telegraph Noise (RTN)

Extended Abstracts of the 2011 International Conference on Solid State Devices and Materials, 2011
B. C. Wang, S. L. Wu, S. J. Chang, C. T. Huang, O. Cheng   +4 more
openaire   +1 more source