Results 161 to 170 of about 1,437 (189)
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2008 IEEE International Electron Devices Meeting, 2008
A new method, called gate current random telegraph noise (IG RTN), was developed to analyze the oxide quality and reliability of high-k gate dielectric MOSFETs. First, a single electron trapping/detrapping from process induced trap in nMOSFET was observed and the associated physical mechanism was proposed.
C. M. Chang +7 more
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A new method, called gate current random telegraph noise (IG RTN), was developed to analyze the oxide quality and reliability of high-k gate dielectric MOSFETs. First, a single electron trapping/detrapping from process induced trap in nMOSFET was observed and the associated physical mechanism was proposed.
C. M. Chang +7 more
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Noble-Metal Based Random Alloy and Intermetallic Nanocrystals: Syntheses and Applications
Chemical Reviews, 2021Ming Zhou, Can Li, Jiye Fang
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Voltage-dependent random telegraph noise (RTN) in HfOx resistive RAM
2014BALATTI, SIMONE +5 more
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Voltage-dependent random telegraph noise (RTN) in HfO<inf>x</inf> resistive RAM
2014 IEEE International Reliability Physics Symposium, 2014Simone Balatti +5 more
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Impact of Random Telegraph Noise (RTN) on Future Memory (Invited)
Extended Abstracts of the 2008 International Conference on Solid State Devices and Materials, 2008openaire +1 more source
2011 12th International Symposium on Quality Electronic Design, 2011
Kyosuke Ito +5 more
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Kyosuke Ito +5 more
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Multiparametric prostate magnetic resonance imaging in the evaluation of prostate cancer
Ca-A Cancer Journal for Clinicians, 2016Baris Turkbey +2 more
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Random versus directionally persistent cell migration
Nature Reviews Molecular Cell Biology, 2009Ryan J Petrie, Kenneth M Yamada
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