Results 71 to 80 of about 1,437 (189)

Random Telegraph Noises in CMOS Image Sensors Caused by Variable Gate-Induced Sense Node Leakage Due to X-Ray Irradiation

IEEE Journal of the Electron Devices Society, 2019
The effects of X-ray irradiation on the random noises, especially the random telegraph noises (RTN), of a 45-nm on 65-nm stacked CMOS image sensor with 8.3M 1.1 μm pixels are investigated.
Calvin Yi-Ping Chao, Thomas M.-H. Wu, Shang-Fu Yeh, Kuo-Yu Chou, Honyih Tu, Chih-Lin Lee, Chin Yin, Philippe Paillet, Vincent Goiffon   +8 more
doaj   +1 more source

An Experimental Approach to Characterizing the Channel Local Temperature Induced by Self-Heating Effect in FinFET

IEEE Journal of the Electron Devices Society, 2018
In this paper, we have developed a methodology of a lateral profiling technique of the channel local temperature in 14 nm FinFET, incurred by the self-heating effect (SHE). As SHE happens, the thermal source generated near the drain will dissipate toward
E Ray Hsieh, Meng-Ru Jiang, Jian-Li Lin, Steve S. Chung, Tse Pu Chen, Shih An Huang, Tai-Ju Chen, Osbert Cheng   +7 more
doaj   +1 more source

High fidelity one-qubit operations under random telegraph noise

, 2005
We address the problem of implementing high fidelity one-qubit operations subject to time dependent noise in the qubit energy splitting. We show with explicit numerical results that high fidelity bit flips and one-qubit NOT gates may be generated by ...
C. P. Slichter, H. Geen, H. K. Cummins, Jun Zhang, K. Birgitta Whaley, K. Blum, L. M. K. Vandersypen, M. A. Nielsen, Mikko Möttönen, N. G. van Kampen, Rogerio de Sousa, S. Kogan   +11 more
core   +1 more source

Lifetime Improvement of 28 nm Resistive Random Access Memory Chip by Machine Learning‐Assisted Prediction Model Collaborated with Resurrection Algorithm

Advanced Electronic Materials, Volume 10, Issue 5, May 2024.
The physical model of resistive random access memory (RRAM) is well fitting quantum point contact (QPC) model. Based on the data set from RRAM chips, the long‐short time memory (LSTM) prediction model is proposed to predict endurance. A resurrection algorithm is proposed to improve the stability and longevity of RRAM chips.
Xu Zheng, Lizhou Wu, Yuanlu Xie, Jinru Lai, Wenxuan Sun, Jie Yu, Danian Dong, Zhaoan Yu, Xiaoyong Xue, Bing Chen, Yan Yang, Xiaoxin Xu, Qi Liu, Ming Liu   +13 more
wiley   +1 more source

Design of Power- and Variability-Aware Nonvolatile RRAM Cell Using Memristor as a Memory Element

IEEE Journal of the Electron Devices Society, 2019
A 3 CNFETs and 2 memristors-based half-select disturbance free 3T2R resistive RAM (RRAM) cell is proposed in this paper. While the two memristors act as the nonvolatile memory elements, CNFETs are employed as high-performance switches.
Soumitra Pal, Subhankar Bose, Wing-Hung Ki, Aminul Islam   +3 more
doaj   +1 more source

Temperature Dependent Variations of Low-Frequency Noise Sources in Cryogenic Short-Channel Bulk MOSFETs

IEEE Access
This study investigated changes in low-frequency noise sources associated with short-channel bulk metal-oxide-semiconductor field-effect transistors (MOSFETs) by analyzing random telegraph noise (RTN) from 300 K down to 3 K.
Takumi Inaba, Hiroshi Oka, Hidehiro Asai, Hiroshi Fuketa, Shota Iizuka, Kimihiko Kato, Shunsuke Shitakata, Koichi Fukuda, Takahiro Mori   +8 more
doaj   +1 more source

Suppression of Decoherence and Disentanglement by the Exchange Interaction

, 2011
Entangled qubit pairs can serve as a quantum memory or as a resource for quantum communication. The utility of such pairs is measured by how long they take to disentangle or decohere. To answer the question of whether qubit-qubit interactions can prolong
Alex Lang, Amrit De, D. Aharonov, Dong Zhou, M. A. Nielsen, N. G. V. Kampen, P. Aliferis, Robert Joynt   +7 more
core   +1 more source

Dynamical suppression of telegraph and 1/f noise due to quantum bistable fluctuator

, 2004
We study dynamical decoupling of a qubit from non gaussian quantum noise due to discrete sources, as bistable fluctuators and 1/f noise. We obtain analytic and numerical results for generic operating point.
A. D’Arrigo, A. Mastellone, C. Cohen Tannoudji, E. Paladino, E. Paladino, E. Paladino, E. Paladino, G. Falci, G. Falci, H. Breuer, M. Nielsen, U. Weiss   +11 more
core   +1 more source

Prediction of Random Telegraph Noise-Induced Threshold Voltage Shift and Its Scaling Dependency Using Machine Learning

IEEE Journal of the Electron Devices Society
Random telegraph noise (RTN) shifts the threshold voltage (Vt) of 3D NAND flash memory cells, making it a key factor of the device malfunction. The aim of this study is to predict the distribution of RTN induced ${\mathrm { V}}_{\mathrm { t}}$ shift in
Eunseok Oh, Hyungcheol Shin
doaj   +1 more source

Trapped charge dynamics in InAs nanowires

, 2012
We study random telegraph noise in the conductance of InAs nanowire field-effect transistors due to single electron trapping in defects. The electron capture and emission times are measured as functions of temperature and gate voltage for individual ...
Baugh, Jonathan, Haapamaki, Chris M., Holloway, Gregory W., LaPierre, Ray R., Song, Yipu   +4 more
core   +1 more source