Results 61 to 70 of about 1,457 (174)
Dynamics of quantum correlations in colored environments
, 2013 We address the dynamics of entanglement and quantum discord for two non interacting qubits initially prepared in a maximally entangled state and then subjected to a classical colored noise, i.e.
Benedetti, C. +3 more
core +1 more source
Low frequency noise due to magnetic inhomogeneities in submicron FeCoB/MgO/FeCoB magnetic tunnel junctions [PDF]
, 2011 We report on room temperature low frequency noise due to magnetic inhomogeneities/domain walls (MI/DWs) in elliptic submicron FeCoB/MgO/FeCoB magnetic tunnel junctions with an area between 0.0245 and 0.0675{\mu}m2.
A. Gomez-Ibarlucea +6 more
core +2 more sources
Unipolar resistive switching in metal oxide/organic semiconductor non-volatile memories as a critical phenomenon [PDF]
, 2015 Diodes incorporating a bilayer of an organic semiconductor and a wide bandgap metal oxide can show unipolar, non-volatile memory behavior after electroforming.
Baxter R. J. +5 more
core +4 more sources
Advanced Electronic Materials, Volume 11, Issue 11, July 2025.The low‐frequency noise in organic bilayer ambipolar transistors is investigated, revealing a unique 1/f⁴ noise from correlated trapping/detrapping and generation/recombination processes. Inserting a thin parylene layer between the n/p junction effectively reduces this excess noise, suggesting a practical approach to enhanced device reliability in ...
Youngmin Han +4 more
wiley +1 more source
, 2019 A three level atom in $\Lambda$ configuration is reduced to an effective two level system, under appropriate conditions, and its $\mathcal{PT}$ symmetric properties are investigated.
Banerjee, Subhashish +2 more
core +1 more source
Noise Spectroscopy and Electrical Transport In NbO2 Memristors with Dual Resistive Switching
Advanced Electronic Materials, Volume 11, Issue 9, June 2025.Electrical properties of NbO2‐based memristors are studied and the ability to engineer them for computing applications is explored. By employing noise spectroscopy and by utilizing a dimerization model of insulators, negative differential resistance and inhomogeneous conduction regions are explained.
Nitin Kumar +4 more
wiley +1 more source
Decoherence due to telegraph and 1/f noise in Josephson qubits
, 2004 We study decoherence due to random telegraph and 1/f noise in Josephson qubits. We illustrate differences between gaussian and non gaussian effects at different working points and for different protocols.
D'Arrigo, A. +3 more
core +1 more source
Reliability challenges of gate dielectric materials in transistors
Information &Functional Materials, Volume 2, Issue 1, Page 62-92, March 2025.We summarize the advantages and challenges of different dielectrics that are applicable to several mainstream channel materials, including Si, SiC, GaN, and 2D materials. The dielectrics materials include oxides such as SiO2, HfO2, and Al2O3 for conventional transistors, as well as fluorides, van der Waals insulators, and Perovskites, which are ...
Ting‐Wei Liu +4 more
wiley +1 more source
Dephasing of Si spin qubits due to charge noise
, 2009 Spin qubits in Silicon quantum dots can have long coherence times, yet their manipulation relies on the exchange interaction, through which charge noise can induce decoherence.
Culcer, Dimitrie +2 more
core +1 more source
IEEE Journal of the Electron Devices Society, 2019 The effects of X-ray irradiation on the random noises, especially the random telegraph noises (RTN), of a 45-nm on 65-nm stacked CMOS image sensor with 8.3M 1.1 μm pixels are investigated.
Calvin Yi-Ping Chao +8 more
doaj +1 more source