Results 51 to 60 of about 1,457 (174)

Factorial Hidden Markov Model analysis of Random Telegraph Noise in Resistive Random Access Memories [PDF]

, 2014
This paper presents a new technique to analyze the characteristics of multi-level random telegraph noise (RTN). RTN is dened as an abrupt switching of ei- ther the current or the voltage between discrete values as a result of trapping/de-trapping ...
PAVAN, Paolo, PUGLISI, Francesco Maria
core  

In Materia Shaping of Randomness with a Standard Complementary Metal‐Oxide‐Semiconductor Transistor for Task‐Adaptive Entropy Generation

Advanced Functional Materials, Volume 36, Issue 23, 19 March 2026.
This study establishes a materials‐driven framework for entropy generation within standard CMOS technology. By electrically rebalancing gate‐oxide traps and Si‐channel defects in foundry‐fabricated FDSOI transistors, the work realizes in‐materia control of temporal correlation – achieving task adaptive entropy optimization for reinforcement learning ...
Been Kwak, Ryun‐Han Koo, Youngchan Cho, Changhyeon Han, Dongbin Kim, Soi Jeong, Yunho Shin, Joonhyeok Choi, Jiseong Im, Jonghyun Ko, Jong‐Ho Lee, Jangsaeng Kim, Youngho Kang, Wonjun Shin, Daewoong Kwon   +14 more
wiley   +1 more source

Random telegraph noise-based analysis of electron traps of sub-30-nm DRAM cell-array transistors in cryogenic operation

Results in Physics
The electron-traps parameters of the fin-type buried-channel-array transistor (BCAT) in a dynamic random-access memory (DRAM) cell is investigated with a random-telegraph-noise (RTN)-based analysis at various temperatures including 77 K.
Sangwon Lee, Ho Jung Lee, Ga Won Yang, Sungju Choi, Jingyu Park, Seonhaeng Lee, Gang-Jun Kim, Namhyun Lee, Yoon Kim, Myounggon Kang, Rock-Hyun Baek, Changhyun Kim, Ickhyun Song, Dae Hwan Kim   +13 more
doaj   +1 more source

Trapped charge dynamics in InAs nanowires

, 2012
We study random telegraph noise in the conductance of InAs nanowire field-effect transistors due to single electron trapping in defects. The electron capture and emission times are measured as functions of temperature and gate voltage for individual ...
Baugh, Jonathan, Haapamaki, Chris M., Holloway, Gregory W., LaPierre, Ray R., Song, Yipu   +4 more
core   +1 more source

True Random Number Generator for Robust Data Security via Intrinsic Stochasticity in a 2D hBN Threshold Switching Memristor

Advanced Functional Materials, Volume 36, Issue 22, 16 March 2026.
We demonstrate true random number generator (TRNG) circuits based on a 2D hBN threshold switching memristor integrated with passive components. Leveraging its intrinsic stochastic behavior, the spike generator produces output fluctuations directly converted into random bits via a comparator.
Yooyeon Jo, Gichang Noh, Eunpyo Park, Dae Kyu Lee, Heerak Wi, Joon Young Kwak   +5 more
wiley   +1 more source

Anomalous random telegraph noise in nanoscale transistors as direct evidence of two metastable states of oxide traps

Scientific Reports, 2017
In this paper, a new pattern of anomalous random telegraph noise (RTN), named “reversal RTN” (rRTN) induced by single oxide trap, is observed in the drain current of nanoscale metal-oxide-semiconductor field-effect transistors (MOSFETs) with high-k gate ...
Shaofeng Guo, Runsheng Wang, Dongyuan Mao, Yangyuan Wang, Ru Huang   +4 more
doaj   +1 more source

Review of Memristors for In‐Memory Computing and Spiking Neural Networks

Advanced Intelligent Systems, Volume 8, Issue 3, March 2026.
Memristors uniquely enable energy‐efficient, brain‐inspired computing by acting as both memory and synaptic elements. This review highlights their physical mechanisms, integration in crossbar arrays, and role in spiking neural networks. Key challenges, including variability, relaxation, and stochastic switching, are discussed, alongside emerging ...
Mostafa Shooshtari, Teresa Serrano‐Gotarredona, Bernabé Linares‐Barranco   +2 more
wiley   +1 more source

Resistive Random Access Memory (RRAM): an Overview of Materials, Switching Mechanism, Performance, Multilevel Cell (mlc) Storage, Modeling, and Applications

Nanoscale Research Letters, 2020
In this manuscript, recent progress in the area of resistive random access memory (RRAM) technology which is considered one of the most standout emerging memory technologies owing to its high speed, low cost, enhanced storage density, potential ...
Furqan Zahoor, Tun Zainal Azni Zulkifli, Farooq Ahmad Khanday   +2 more
doaj   +1 more source

A Comparative Study of Digital Memristor‐Based Processing‐In‐Memory from a Device and Reliability Perspective

Advanced Electronic Materials, Volume 12, Issue 1, 7 January 2026.
Processing‐in‐memory (PIM) architectures based on memristors offer significant potential for low‐power computation and the realization of novel computing paradigms by performing logic operations directly within memory. This review summarizes recent advances in memristor‐based logic techniques, with particular emphasis on reliability considerations and ...
Thomas Neuner, Henriette Padberg, Lior Kornblum, Eilam Yalon, Pedram Khalili Amiri, Shahar Kvatinsky   +5 more
wiley   +1 more source

Equivalent qubit dynamics under classical and quantum noise

, 2007
We study the dynamics of quantum systems under classical and quantum noise, focusing on decoherence in qubit systems. Classical noise is described by a random process leading to a stochastic temporal evolution of a closed quantum system, whereas quantum ...
H. J. Charmichael, H. K. Cummins, L. K. Grover, M. Möttönen, O.-P. Saira, R. J. Schoelkopf, T. Ojanen, V. Bergholm   +7 more
core   +1 more source