Results 51 to 60 of about 242 (144)

Observation of 1/f 4 Noise in Organic Bilayer Ambipolar FETs and Proposition of Defect Engineering Method for Ultimate Noise Control

Advanced Electronic Materials, Volume 11, Issue 11, July 2025.
The low‐frequency noise in organic bilayer ambipolar transistors is investigated, revealing a unique 1/f⁴ noise from correlated trapping/detrapping and generation/recombination processes. Inserting a thin parylene layer between the n/p junction effectively reduces this excess noise, suggesting a practical approach to enhanced device reliability in ...
Youngmin Han, Jaechan Song, Ryun‐Han Koo, Hocheon Yoo, Wonjun Shin   +4 more
wiley   +1 more source

Noise Spectroscopy and Electrical Transport In NbO2 Memristors with Dual Resistive Switching

Advanced Electronic Materials, Volume 11, Issue 9, June 2025.
Electrical properties of NbO2‐based memristors are studied and the ability to engineer them for computing applications is explored. By employing noise spectroscopy and by utilizing a dimerization model of insulators, negative differential resistance and inhomogeneous conduction regions are explained.
Nitin Kumar, Jong E. Han, Karsten Beckmann, Nathaniel Cady, G. Sambandamurthy   +4 more
wiley   +1 more source

Random Telegraph Noises in CMOS Image Sensors Caused by Variable Gate-Induced Sense Node Leakage Due to X-Ray Irradiation

IEEE Journal of the Electron Devices Society, 2019
The effects of X-ray irradiation on the random noises, especially the random telegraph noises (RTN), of a 45-nm on 65-nm stacked CMOS image sensor with 8.3M 1.1 μm pixels are investigated.
Calvin Yi-Ping Chao, Thomas M.-H. Wu, Shang-Fu Yeh, Kuo-Yu Chou, Honyih Tu, Chih-Lin Lee, Chin Yin, Philippe Paillet, Vincent Goiffon   +8 more
doaj   +1 more source

Reliability challenges of gate dielectric materials in transistors

Information &Functional Materials, Volume 2, Issue 1, Page 62-92, March 2025.
We summarize the advantages and challenges of different dielectrics that are applicable to several mainstream channel materials, including Si, SiC, GaN, and 2D materials. The dielectrics materials include oxides such as SiO2, HfO2, and Al2O3 for conventional transistors, as well as fluorides, van der Waals insulators, and Perovskites, which are ...
Ting‐Wei Liu, Zhe Zhao, Ruyue Cao, Yue‐Yang Liu, Xiangwei Jiang   +4 more
wiley   +1 more source

An Experimental Approach to Characterizing the Channel Local Temperature Induced by Self-Heating Effect in FinFET

IEEE Journal of the Electron Devices Society, 2018
In this paper, we have developed a methodology of a lateral profiling technique of the channel local temperature in 14 nm FinFET, incurred by the self-heating effect (SHE). As SHE happens, the thermal source generated near the drain will dissipate toward
E Ray Hsieh, Meng-Ru Jiang, Jian-Li Lin, Steve S. Chung, Tse Pu Chen, Shih An Huang, Tai-Ju Chen, Osbert Cheng   +7 more
doaj   +1 more source

A Review of Performance and Reliability Issues in D Flip‐Flops for Future Artificial Intelligence and Internet of Things Applications

IET Circuits, Devices &Systems, Volume 2025, Issue 1, 2025.
In this paper, various D flip‐flops (FFs) (DFFs) are studied and analyzed based on the performance and reliability effects of different architectures, technology, area, power, delay, and several other key performance parameters of DFFs. Based on these parameters, a few selected DFFs such as C2SFF, conditional‐bridging FF (CBFF)‐S, self‐shut‐off pulsed ...
Syeda Hurmath Juveria, R. Shashank, J. Ajayan, Amit Krishna Dwivedi, D. Nirmal, Shashikant Patil   +5 more
wiley   +1 more source

Electrodes for High‐𝜅 Molecular Crystal Antimony Trioxide Gate Dielectrics for 2D Electronics

Advanced Electronic Materials, Volume 10, Issue 11, November 2024.
Wafer‐scale deposition of high‐𝜅 gate dielectric on 2D materials is crucial for applications in nano‐electronics, and antimony trioxide (Sb2O3) has shown promising results. It is shown that the choice of contact is critical, as the chemistry at the Sb2O3/contact interface dictates the dielectric performance.
Alok Ranjan, Lunjie Zeng, Eva Olsson
wiley   +1 more source

Temperature Dependent Variations of Low-Frequency Noise Sources in Cryogenic Short-Channel Bulk MOSFETs

IEEE Access
This study investigated changes in low-frequency noise sources associated with short-channel bulk metal-oxide-semiconductor field-effect transistors (MOSFETs) by analyzing random telegraph noise (RTN) from 300 K down to 3 K.
Takumi Inaba, Hiroshi Oka, Hidehiro Asai, Hiroshi Fuketa, Shota Iizuka, Kimihiko Kato, Shunsuke Shitakata, Koichi Fukuda, Takahiro Mori   +8 more
doaj   +1 more source

Prediction of Random Telegraph Noise-Induced Threshold Voltage Shift and Its Scaling Dependency Using Machine Learning

IEEE Journal of the Electron Devices Society
Random telegraph noise (RTN) shifts the threshold voltage (Vt) of 3D NAND flash memory cells, making it a key factor of the device malfunction. The aim of this study is to predict the distribution of RTN induced ${\mathrm { V}}_{\mathrm { t}}$ shift in
Eunseok Oh, Hyungcheol Shin
doaj   +1 more source

Design of Power- and Variability-Aware Nonvolatile RRAM Cell Using Memristor as a Memory Element

IEEE Journal of the Electron Devices Society, 2019
A 3 CNFETs and 2 memristors-based half-select disturbance free 3T2R resistive RAM (RRAM) cell is proposed in this paper. While the two memristors act as the nonvolatile memory elements, CNFETs are employed as high-performance switches.
Soumitra Pal, Subhankar Bose, Wing-Hung Ki, Aminul Islam   +3 more
doaj   +1 more source