Analysis of random telegraph noise in resistive memories: The case of unstable filaments
Micro and Nano Engineering, 2023 Through Random Telegraph Noise (RTN) analysis, valuable information can be provided about the role of defect traps in fine tuning and reading of the state of a nanoelectronic device.
Nikolaos Vasileiadis +4 more
doaj +1 more source
Random Telegraph Noise (RTN) Model and Simulation
, 2021 Outline Background of RTN and simulation challenge New RTN simulation flow ...
openaire +1 more source
Impact of Random Telegraph Noise Profiles on Drain-Current Fluctuation During Dynamic Gate Bias [PDF]
, 2014 The influence of random telegraph noise (RTN) in MOSFETs on drain current (Id) during the rise/fall edges of the pulsed gate voltage (Vg) cycle was investigated.
Chun Meng Dou +6 more
core +1 more source
Efficient quantum transport in a multi-site system combining classical noise and quantum baths
New Journal of Physics, 2020 We study the population dynamics and quantum transport efficiency of a multi-site dissipative system driven by a random telegraph noise (RTN) by using a variational polaron master equation for both linear chain and ring configurations.
Arzu Kurt, Matteo A C Rossi, Jyrki Piilo
doaj +1 more source
MoS<sub>2</sub> Channel-Enhanced High-Density Charge Trap Flash Memory and Machine Learning-Assisted Sensing Methodologies for Memory-Centric Computing Systems. [PDF]
Adv Sci (Weinh)Driven by AI computing demands, this study investigates MoS2 channels for 3D NAND Flash to achieve high‐density, low‐power, and reliable nonvolatile memory. MoS2 enables a large memory window and lower operating voltages with low‐k tunneling layer, demonstrating endurance of 10⁴ cycles and retention of 10⁵ s. Comprehensive analyses and machine learning‐
Kim KH +7 more
europepmc +2 more sources
Investigation of the RTN Distribution of nanoscale MOS devices from subthreshold to on-state [PDF]
, 2013 This letter presents a numerical investigation of the statistical distribution of the random telegraph noise (RTN) amplitude in nanoscale MOS devices, focusing on the change of its main features when moving from the subthreshold to the on-state ...
Amoroso, S.M. +6 more
core +1 more source
Model Implementation of Lorentzian Spectra for Circuit Noise Simulations in the Frequency Domain
IEEE Journal of the Electron Devices Society, 2022 This work presents a new method for the Verilog-A implementation of Lorentzian noise models, in a module called VERILOR, which can automatically generate either Lorentzian or 1/f-like noise spectra depending on the trap density and gate oxide area, for ...
Angeliki Tataridou +2 more
doaj +1 more source
IEEE Journal of the Electron Devices Society, 2017 A new method for on-chip random telegraph noise (RTN) characteristic time constant extraction using the double sampling circuit in an 8.3 Mpixel CMOS image sensor is described.
Calvin Yi-Ping Chao +5 more
doaj +1 more source
Impact of Hot Carrier Aging on Random Telegraph Noise and Within a Device Fluctuation [PDF]
For nanometer MOSFETs, charging and discharging a single trap induces random telegraph noise (RTN). When there are more than a few traps, RTN signal becomes complex and appears as within a device fluctuation (WDF). RTN/WDF causes jitters in switch timing
Duan, M +8 more
core +3 more sources
, 2007 We describe how the James Webb Space Telescope (JWST) Near-Infrared Spectrograph's (NIRSpec's) detectors will be read out, and present a model of how noise scales with the number of multiple non-destructive reads sampling-up-the-ramp.
Augustyn Waczynski +44 more
core +1 more source