Results 21 to 30 of about 242 (144)

A Complex Model via Phase-Type Distributions to Study Random Telegraph Noise in Resistive Memories

open access: yesMathematics, 2021
A new stochastic process was developed by considering the internal performance of macro-states in which the sojourn time in each one is phase-type distributed depending on time.
Juan E. Ruiz-Castro   +3 more
doaj   +1 more source

Statistical Analysis of the Random Telegraph Noise in a 1.1 μm Pixel, 8.3 MP CMOS Image Sensor Using On-Chip Time Constant Extraction Method

open access: yesSensors, 2017
A study of the random telegraph noise (RTN) of a 1.1 μm pitch, 8.3 Mpixel CMOS image sensor (CIS) fabricated in a 45 nm backside-illumination (BSI) technology is presented in this paper.
Calvin Yi-Ping Chao   +6 more
doaj   +1 more source

Quantitative Electron Beam-Single Atom Interactions Enabled by Sub-20-pm Precision Targeting. [PDF]

open access: yesAdv Sci (Weinh)
Atomic lock‐on (ALO) is a rapid, low‐dose in situ technique in scanning transmission electron microscopy (STEM) that achieves sub‐20 picometer (pm) beam positioning. A sparse annular scan collects positional information while avoiding irradiation of the target site.
Roccapriore KM, Ross FM, Klein J.
europepmc   +2 more sources

RTN and Annealing Related to Stress and Temperature in FIND RRAM Array

open access: yesNanoscale Research Letters, 2019
In this work, an observation on random telegraph noise (RTN) signal in the read current of a FinFET dielectric RRAM (FIND RRAM) device is presented. The RTN signal of a FIND RRAM cell is found to change after the device being subjected to cycling stress.
Chih Yuan Chen   +2 more
doaj   +1 more source

On the Accuracy in Modeling the Statistical Distribution of Random Telegraph Noise Amplitude

open access: yesIEEE Access, 2021
The power consumption of digital circuits is proportional to the square of operation voltage and the demand for low power circuits reduces the operation voltage towards the threshold of MOSFETs.
Mehzabeen Mehedi   +6 more
doaj   +1 more source

Impact of Hot Carrier Aging on Random Telegraph Noise and Within a Device Fluctuation

open access: yesIEEE Journal of the Electron Devices Society, 2016
For nanometer MOSFETs, charging and discharging a single trap induces random telegraph noise (RTN). When there are more than a few traps, RTN signal becomes complex and appears as within a device fluctuation (WDF). RTN/WDF causes jitters in switch timing
Azrif B. Manut   +8 more
doaj   +1 more source

Random Telegraph Noise (RTN) Model and Simulation

open access: yes, 2021
Outline Background of RTN and simulation challenge New RTN simulation flow ...
openaire   +1 more source

Effect of random telegraph noise on entanglement and nonlocality of a qubit-qutrit system [PDF]

open access: yesIranian Journal of Astronomy and Astrophysics, 2017
We study the evolution of entanglement and nonlocality of a non-interacting qubit-qutrit system under the effect of random telegraph noise (RTN) in independent and common environments in Markovian and non-Markovian regimes.
Hakimeh Jaghouri, Samira Nazifkar
doaj   +1 more source

Analysis of random telegraph noise in resistive memories: The case of unstable filaments

open access: yesMicro and Nano Engineering, 2023
Through Random Telegraph Noise (RTN) analysis, valuable information can be provided about the role of defect traps in fine tuning and reading of the state of a nanoelectronic device.
Nikolaos Vasileiadis   +4 more
doaj   +1 more source

Efficient quantum transport in a multi-site system combining classical noise and quantum baths

open access: yesNew Journal of Physics, 2020
We study the population dynamics and quantum transport efficiency of a multi-site dissipative system driven by a random telegraph noise (RTN) by using a variational polaron master equation for both linear chain and ring configurations.
Arzu Kurt, Matteo A C Rossi, Jyrki Piilo
doaj   +1 more source

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