Results 21 to 30 of about 1,457 (174)
IEEE Journal of the Electron Devices Society, 2021 It is difficult to measure the random telegraph noises (RTN) of MOSFET subthreshold currents at the sub-pA level directly and accurately. In this work, we used a charge integration method similar to the operation of the CMOS image sensors (CIS) to ...
Calvin Yi-Ping Chao +7 more
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Dual-Point Technique for Multi-Trap RTN Signal Extraction
IEEE Access, 2020 Random telegraph noise (RTN), as one dominant variation source in the ultra-scaled devices, has been attracting much more attention, and its analysis is of great importance to understand the fundamental physical mechanisms.
Xuepeng Zhan +5 more
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A Complex Model via Phase-Type Distributions to Study Random Telegraph Noise in Resistive Memories
Mathematics, 2021 A new stochastic process was developed by considering the internal performance of macro-states in which the sojourn time in each one is phase-type distributed depending on time.
Juan E. Ruiz-Castro +3 more
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Applied Sciences, 2020 In this paper, different physical models of single trap defects are considered, which are localized in the oxide layer or at the oxide–semiconductor interface of field effect transistors.
Atabek E. Atamuratov +5 more
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Sensors, 2017 A study of the random telegraph noise (RTN) of a 1.1 μm pitch, 8.3 Mpixel CMOS image sensor (CIS) fabricated in a 45 nm backside-illumination (BSI) technology is presented in this paper.
Calvin Yi-Ping Chao +6 more
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On the Accuracy in Modeling the Statistical Distribution of Random Telegraph Noise Amplitude
IEEE Access, 2021 The power consumption of digital circuits is proportional to the square of operation voltage and the demand for low power circuits reduces the operation voltage towards the threshold of MOSFETs.
Mehzabeen Mehedi +6 more
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Entanglement dynamics in superconducting qubits affected by local bistable impurities [PDF]
, 2012 We study the entanglement dynamics for two independent superconducting qubits, each affected by a bistable impurity generating random telegraph noise (RTN) at pure dephasing.
COMPAGNO, Giuseppe +4 more
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Impact of Hot Carrier Aging on Random Telegraph Noise and Within a Device Fluctuation
IEEE Journal of the Electron Devices Society, 2016 For nanometer MOSFETs, charging and discharging a single trap induces random telegraph noise (RTN). When there are more than a few traps, RTN signal becomes complex and appears as within a device fluctuation (WDF). RTN/WDF causes jitters in switch timing
Azrif B. Manut +8 more
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Random telegraph-signal noise in junctionless transistors [PDF]
, 2011 Random telegraph-signal noise (RTN) is measured in junctionless metal-oxide-silicon field-effect transistors (JL MOSFETs) as a function of gate and drain voltage and temperature.
Akhavan, Nima Dehdashti +5 more
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Effect of random telegraph noise on entanglement and nonlocality of a qubit-qutrit system [PDF]
Iranian Journal of Astronomy and Astrophysics, 2017 We study the evolution of entanglement and nonlocality of a non-interacting qubit-qutrit system under the effect of random telegraph noise (RTN) in independent and common environments in Markovian and non-Markovian regimes.
Hakimeh Jaghouri, Samira Nazifkar
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