Results 41 to 50 of about 1,457 (174)

The origin of switching noise in GaAs/AlGaAs lateral gated devices [PDF]

, 2005
We have studied the origin of switching (telegraph) noise at low temperature in lateral quantum structures defined electrostatically in GaAs/AlGaAs heterostructures by surface gates.
A. R. Long, A. S. Sachrajda, C. W. J. Beenakker, D. H. Cobden, J. Gupta, J. H. Davies, J. Lapointe, John H. Davies, Louis Gaudreau, M. Pioro-Ladrière, P. Zawadzki, S. Studenikin, Z. Wasilewski   +12 more
core   +1 more source

Gate Voltage Dependence of MOSFET Random Telegraph Noise Amplitude at Room and Cryogenic Temperatures

IEEE Journal of the Electron Devices Society
Random telegraph noise (RTN) in 65 nm technology bulk CMOS devices was measured at both 300 K and 1.5 K, and the dependence of noise amplitude on gate voltage was analyzed.
Kiyoshi Takeuchi, Tomoko Mizutani, Takuya Saraya, Hiroshi Oka, Takahiro Mori, Masaharu Kobayashi, Toshiro Hiramoto   +6 more
doaj   +1 more source

An Assessment of the Statistical Distribution of Random Telegraph Noise Time Constants

IEEE Access, 2020
As transistor sizes are downscaled, a single trapped charge has a larger impact on smaller devices and the Random Telegraph Noise (RTN) becomes increasingly important.
Mehzabeen Mehedi, Kean Hong Tok, Jian Fu Zhang, Zhigang Ji, Zengliang Ye, Weidong Zhang, John S. Marsland   +6 more
doaj   +1 more source

Discrete-Trap Effects on 3-D NAND Variability – Part II: Random Telegraph Noise

IEEE Journal of the Electron Devices Society
In Part II of this article we discuss the impact of a discrete treatment of traps on 3-D NAND Flash random telegraph noise (RTN). A higher RTN results when discrete traps are taken into account, that can only be explained by a stronger influence of the ...
Gerardo Malavena, Salvatore M. Amoroso, Andrew R. Brown, Plamen Asenov, Xi-Wei Lin, Victor Moroz, Mattia Giulianini, David Refaldi, Christian Monzio Compagnoni, Alessandro S. Spinelli   +9 more
doaj   +1 more source

Emerging Memory and Device Technologies for Hardware‐Accelerated Model Training and Inference

Advanced Electronic Materials, EarlyView.
This review investigates the suitability of various emerging memory technologies as compute‐in‐memory hardware for artificial intelligence (AI) applications. Distinct requirements for training‐ and inference‐centric computing are discussed, spanning device physics, materials, and system integration.
Yoonho Cho, Dae‐won Kim, Yujin Kim, Jung‐Heum Na, Yuwon Jeong, Dong‐Yeop Lee, Shinhyun Choi   +6 more
wiley   +1 more source

Silicon Nitride Resistive Memories

Advanced Electronic Materials, EarlyView.
Amorphous SiNx is an attractive resistance switching material for ReRAM applications due to its physicochemical properties, such as humidity resistance, low oxygen diffusivity, and is used as a metal diffusion blocker. By modifying the ratio between N and Si atoms, the microstructure of the SiNx is affected, rendering it possible to change the ...
Alexandros‐Eleftherios Mavropoulis, Nikolaos Vasileiadis, Iosif‐Angelos Fyrigos, Emmanouil Stavroulakis, Caroline Bonafos, Pascal Normand, Georgios Ch. Sirakoulis, Panagiotis Dimitrakis   +7 more
wiley   +1 more source

Non-Markovian continuous-time quantum walks on lattices with dynamical noise [PDF]

, 2016
We address the dynamics of continuous-time quantum walks on one-dimensional disordered lattices inducing dynamical noise in the system. Noise is described as time-dependent fluctuations of the tunneling amplitudes between adjacent sites, and attention is
Benedetti, Claudia, Bordone, Paolo, Buscemi, Fabrizio, Paris, Matteo G. A.   +3 more
core   +2 more sources

Toward Capacitive In‐Memory‐Computing: A Device to Systems Level Perspective on the Future of Artificial Intelligence Hardware

Advanced Intelligent Discovery, EarlyView.
Capacitive, charge‐domain compute‐in‐memory (CIM) stores weights as capacitance,eliminating DC sneak paths and IR‐drop, yielding near‐zero standbypower. In this perspective, we present a device to systems level performance analysis of most promising architectures and predict apathway for upscaling capacitive CIM for sustainable edge computing ...
Kapil Bhardwaj, Ella Paasio, Sayani Majumdar   +2 more
wiley   +1 more source

Quantum Frustration as a Protection Mechanism in Non‐Topological Majorana Qubits

Annalen der Physik, Volume 538, Issue 4, April 2026.
Quantum frustration is proposed as a robust protection mechanism for non‐topological ‐junction qubit. By leveraging distinct spatial profiles, co‐located Majorana modes couple to independent environments, creating incompatible pointer bases that suppress decoherence.
E. Novais
wiley   +1 more source

Error analysis of bit-flip qubits under random telegraph noise for low and high temperature measurement application

, 2020
Achieving small error for qubit gate operations under random telegraph noise (RTN) is of great interest for potential applications in quantum computing and quantum error correction.
Prabhakar, Sanjay
core