Results 41 to 50 of about 242 (144)

Toward Capacitive In‐Memory‐Computing: A Device to Systems Level Perspective on the Future of Artificial Intelligence Hardware

Advanced Intelligent Discovery, EarlyView.
Capacitive, charge‐domain compute‐in‐memory (CIM) stores weights as capacitance,eliminating DC sneak paths and IR‐drop, yielding near‐zero standbypower. In this perspective, we present a device to systems level performance analysis of most promising architectures and predict apathway for upscaling capacitive CIM for sustainable edge computing ...
Kapil Bhardwaj, Ella Paasio, Sayani Majumdar   +2 more
wiley   +1 more source

Exploiting Ferroelectric and Spintronic Dynamics for Neural Network Computation

Advanced Intelligent Systems, EarlyView.
Ferroelectric and spintronic devices, relying on the control of polarization and magnetization, offer intrinsically fast, durable, energy‐efficient, and low‐latency building blocks for analog in‐memory computing. The hysteretic dynamics of an order parameter are leveraged to provide nonvolatile, multistate memory and nonlinear switching. Brain‐inspired
Dashiell Harrison, Kevin Nadaud, Josquin Harrison, Guillaume F. Nataf, Laura Bégon‐Lours   +4 more
wiley   +1 more source

Quantum Frustration as a Protection Mechanism in Non‐Topological Majorana Qubits

Annalen der Physik, Volume 538, Issue 4, April 2026.
Quantum frustration is proposed as a robust protection mechanism for non‐topological ‐junction qubit. By leveraging distinct spatial profiles, co‐located Majorana modes couple to independent environments, creating incompatible pointer bases that suppress decoherence.
E. Novais
wiley   +1 more source

Random telegraph noise-based analysis of electron traps of sub-30-nm DRAM cell-array transistors in cryogenic operation

Results in Physics
The electron-traps parameters of the fin-type buried-channel-array transistor (BCAT) in a dynamic random-access memory (DRAM) cell is investigated with a random-telegraph-noise (RTN)-based analysis at various temperatures including 77 K.
Sangwon Lee, Ho Jung Lee, Ga Won Yang, Sungju Choi, Jingyu Park, Seonhaeng Lee, Gang-Jun Kim, Namhyun Lee, Yoon Kim, Myounggon Kang, Rock-Hyun Baek, Changhyun Kim, Ickhyun Song, Dae Hwan Kim   +13 more
doaj   +1 more source

In Materia Shaping of Randomness with a Standard Complementary Metal‐Oxide‐Semiconductor Transistor for Task‐Adaptive Entropy Generation

Advanced Functional Materials, Volume 36, Issue 23, 19 March 2026.
This study establishes a materials‐driven framework for entropy generation within standard CMOS technology. By electrically rebalancing gate‐oxide traps and Si‐channel defects in foundry‐fabricated FDSOI transistors, the work realizes in‐materia control of temporal correlation – achieving task adaptive entropy optimization for reinforcement learning ...
Been Kwak, Ryun‐Han Koo, Youngchan Cho, Changhyeon Han, Dongbin Kim, Soi Jeong, Yunho Shin, Joonhyeok Choi, Jiseong Im, Jonghyun Ko, Jong‐Ho Lee, Jangsaeng Kim, Youngho Kang, Wonjun Shin, Daewoong Kwon   +14 more
wiley   +1 more source

Anomalous random telegraph noise in nanoscale transistors as direct evidence of two metastable states of oxide traps

Scientific Reports, 2017
In this paper, a new pattern of anomalous random telegraph noise (RTN), named “reversal RTN” (rRTN) induced by single oxide trap, is observed in the drain current of nanoscale metal-oxide-semiconductor field-effect transistors (MOSFETs) with high-k gate ...
Shaofeng Guo, Runsheng Wang, Dongyuan Mao, Yangyuan Wang, Ru Huang   +4 more
doaj   +1 more source

True Random Number Generator for Robust Data Security via Intrinsic Stochasticity in a 2D hBN Threshold Switching Memristor

Advanced Functional Materials, Volume 36, Issue 22, 16 March 2026.
We demonstrate true random number generator (TRNG) circuits based on a 2D hBN threshold switching memristor integrated with passive components. Leveraging its intrinsic stochastic behavior, the spike generator produces output fluctuations directly converted into random bits via a comparator.
Yooyeon Jo, Gichang Noh, Eunpyo Park, Dae Kyu Lee, Heerak Wi, Joon Young Kwak   +5 more
wiley   +1 more source

Resistive Random Access Memory (RRAM): an Overview of Materials, Switching Mechanism, Performance, Multilevel Cell (mlc) Storage, Modeling, and Applications

Nanoscale Research Letters, 2020
In this manuscript, recent progress in the area of resistive random access memory (RRAM) technology which is considered one of the most standout emerging memory technologies owing to its high speed, low cost, enhanced storage density, potential ...
Furqan Zahoor, Tun Zainal Azni Zulkifli, Farooq Ahmad Khanday   +2 more
doaj   +1 more source

Review of Memristors for In‐Memory Computing and Spiking Neural Networks

Advanced Intelligent Systems, Volume 8, Issue 3, March 2026.
Memristors uniquely enable energy‐efficient, brain‐inspired computing by acting as both memory and synaptic elements. This review highlights their physical mechanisms, integration in crossbar arrays, and role in spiking neural networks. Key challenges, including variability, relaxation, and stochastic switching, are discussed, alongside emerging ...
Mostafa Shooshtari, Teresa Serrano‐Gotarredona, Bernabé Linares‐Barranco   +2 more
wiley   +1 more source

A Comparative Study of Digital Memristor‐Based Processing‐In‐Memory from a Device and Reliability Perspective

Advanced Electronic Materials, Volume 12, Issue 1, 7 January 2026.
Processing‐in‐memory (PIM) architectures based on memristors offer significant potential for low‐power computation and the realization of novel computing paradigms by performing logic operations directly within memory. This review summarizes recent advances in memristor‐based logic techniques, with particular emphasis on reliability considerations and ...
Thomas Neuner, Henriette Padberg, Lior Kornblum, Eilam Yalon, Pedram Khalili Amiri, Shahar Kvatinsky   +5 more
wiley   +1 more source