Results 11 to 20 of about 242 (144)

Multilevel RTN Removal Tools for Dynamic FBG Strain Measurements Corrupted by Peak-Splitting Artefacts [PDF]

Sensors, 2021
Strain measurements using fibre Bragg grating (FBG) optical sensors are becoming ever more commonplace. However, in some cases, these measurements can become corrupted by sudden jumps in the signal, which manifest as spikes or step-like offsets in the ...
Dominik Johannes Marius Fallais, Maximilian Henkel, Nymfa Noppe, Wout Weijtjens, Christof Devriendt   +4 more
doaj   +2 more sources

Bias‐Independent True Random Number Generator Circuit using Memristor Noise Signals as Entropy Source

Advanced Intelligent Systems
Inherent noise characteristics of memristor devices can be utilized in stochastic computing applications such as true random number generators (TRNGs).
Jinwoo Park, Hyunjoong Kim, Hyungjin Kim
doaj   +2 more sources

Investigation on the amplitude of random telegraph noise (RTN) in nanoscale MOSFETs: Scaling limit of “Hole in the inversion layer” model [PDF]

2016 13th IEEE International Conference on Solid-State and Integrated Circuit Technology (ICSICT), 2016
In this paper, the widely adopted “hole in the inversion layer” (HIL) model for predicting the amplitude of random telegraph noise (RTN) in nanoscale MOSFETs, is theoretically revisited with focusing on its scaling limit and validation range. It is found that this simple physical model fail to apply on ultra-scaled devices with L<;20nm and/or W< ...
Shaofeng Guo, Runsheng Wang, Xingsheng Wang   +2 more
exaly   +2 more sources

Semi-Automated Extraction of the Distribution of Single Defects for nMOS Transistors [PDF]

Micromachines, 2020
Miniaturization of metal-oxide-semiconductor field effect transistors (MOSFETs) is typically beneficial for their operating characteristics, such as switching speed and power consumption, but at the same time miniaturization also leads to increased ...
Bernhard Stampfer, Franz Schanovsky, Tibor Grasser, Michael Waltl   +3 more
doaj   +2 more sources

Amplified Quantum Correlation via Dynamical Modulation in Qubit‐Qutrit System under Markovian and Non‐Markovian Noise

Advanced Physics Research
We investigated the entanglement dynamics in a hybrid system subjected to a dynamical modulation amplification coupled to Random Telegraph Noise (RTN), which exhibits two distinct regimes: Markovian and non‐Markovian.
Polislin Fabrice Wonang, Wenceslas Cyprien Minsta Mi Edoux, Odette Melachio Tiokang, Georges Collince Fouokeng, Alain B. Moubissi, Tchoffo Martin   +5 more
doaj   +2 more sources

Optimization of Random Telegraph Noise Characteristics in Memristor for True Random Number Generator

Advanced Intelligent Systems, 2023
Memristor devices can be utilized for various computing applications, and stochastic computing is one of them. The intrinsic stochastic characteristics of the memristor cause unpredictable current fluctuations by the capture and emission of electrons in ...
Min Suk Song, Tae-Hyeon Kim, Hwiho Hwang, Suhyeon Ahn, Hussein Nili, Hyungjin Kim   +5 more
doaj   +1 more source

New high resolution Random Telegraph Noise (RTN) characterization method for resistive RAM [PDF]

Solid-State Electronics, 2015
Random Telegraph Noise (RTN) is one of the main reliability problems of resistive switching-based memories. To understand the physics behind RTN, a complete and accurate RTN characterization is required. The standard equipment used to analyse RTN has a typical time resolution of ∼2 ms which prevents evaluating fast phenomena.
Maestro Izquierdo, Marcos, Diaz-Fortuny, Javier, Crespo Yepes, Albert, Bargallo Gonzalez, Mireia, Martin Martinez, Javier, Rodríguez Martínez, Rosana, Nafría i Maqueda, Montserrat, Campabadal, Francesca, Aymerich Humet, Xavier   +8 more
openaire   +3 more sources

Statistical Analysis of Random Telegraph Noises of MOSFET Subthreshold Currents Using a 1M Array Test Chip in a 40 nm Process

IEEE Journal of the Electron Devices Society, 2021
It is difficult to measure the random telegraph noises (RTN) of MOSFET subthreshold currents at the sub-pA level directly and accurately. In this work, we used a charge integration method similar to the operation of the CMOS image sensors (CIS) to ...
Calvin Yi-Ping Chao, Meng-Hsu Wu, Shang-Fu Yeh, Chin-Hao Chang, Chi-Lin Lee, Chin Yin, Kuo-Yu Chou, Honyih Tu   +7 more
doaj   +1 more source

Dual-Point Technique for Multi-Trap RTN Signal Extraction

IEEE Access, 2020
Random telegraph noise (RTN), as one dominant variation source in the ultra-scaled devices, has been attracting much more attention, and its analysis is of great importance to understand the fundamental physical mechanisms.
Xuepeng Zhan, Yifang Xi, Qianwen Wang, Weiqiang Zhang, Zhigang Ji, Jiezhi Chen   +5 more
doaj   +1 more source

Contribution to the Physical Modelling of Single Charged Defects Causing the Random Telegraph Noise in Junctionless FinFET

Applied Sciences, 2020
In this paper, different physical models of single trap defects are considered, which are localized in the oxide layer or at the oxide–semiconductor interface of field effect transistors.
Atabek E. Atamuratov, Mahkam M. Khalilloev, Ahmed Yusupov, A. J. García-Loureiro, Jean Chamberlain Chedjou, Kyamakya Kyandoghere   +5 more
doaj   +1 more source