Results 11 to 20 of about 1,457 (174)

RTN and Annealing Related to Stress and Temperature in FIND RRAM Array [PDF]

Nanoscale Research Letters, 2019
In this work, an observation on random telegraph noise (RTN) signal in the read current of a FinFET dielectric RRAM (FIND RRAM) device is presented. The RTN signal of a FIND RRAM cell is found to change after the device being subjected to cycling stress.
Chih Yuan Chen, Chrong Jung Lin, Ya-Chin King   +2 more
doaj   +2 more sources

Multilevel RTN Removal Tools for Dynamic FBG Strain Measurements Corrupted by Peak-Splitting Artefacts [PDF]

Sensors, 2021
Strain measurements using fibre Bragg grating (FBG) optical sensors are becoming ever more commonplace. However, in some cases, these measurements can become corrupted by sudden jumps in the signal, which manifest as spikes or step-like offsets in the ...
Dominik Johannes Marius Fallais, Maximilian Henkel, Nymfa Noppe, Wout Weijtjens, Christof Devriendt   +4 more
doaj   +2 more sources

Bias‐Independent True Random Number Generator Circuit using Memristor Noise Signals as Entropy Source

Advanced Intelligent Systems
Inherent noise characteristics of memristor devices can be utilized in stochastic computing applications such as true random number generators (TRNGs).
Jinwoo Park, Hyunjoong Kim, Hyungjin Kim
doaj   +2 more sources

Investigation on the amplitude of random telegraph noise (RTN) in nanoscale MOSFETs: Scaling limit of “Hole in the inversion layer” model [PDF]

2016 13th IEEE International Conference on Solid-State and Integrated Circuit Technology (ICSICT), 2016
In this paper, the widely adopted “hole in the inversion layer” (HIL) model for predicting the amplitude of random telegraph noise (RTN) in nanoscale MOSFETs, is theoretically revisited with focusing on its scaling limit and validation range. It is found that this simple physical model fail to apply on ultra-scaled devices with L<;20nm and/or W< ...
Zhang, Zexuan, Zhang, Zhe, Guo, Shaofeng, Wang, Runsheng, Wang, Xingsheng, Cheng, Binjie, Asenov, Asen, Huang, Ru   +7 more
exaly   +2 more sources

Semi-Automated Extraction of the Distribution of Single Defects for nMOS Transistors [PDF]

Micromachines, 2020
Miniaturization of metal-oxide-semiconductor field effect transistors (MOSFETs) is typically beneficial for their operating characteristics, such as switching speed and power consumption, but at the same time miniaturization also leads to increased ...
Bernhard Stampfer, Franz Schanovsky, Tibor Grasser, Michael Waltl   +3 more
doaj   +2 more sources

Amplified Quantum Correlation via Dynamical Modulation in Qubit‐Qutrit System under Markovian and Non‐Markovian Noise

Advanced Physics Research
We investigated the entanglement dynamics in a hybrid system subjected to a dynamical modulation amplification coupled to Random Telegraph Noise (RTN), which exhibits two distinct regimes: Markovian and non‐Markovian.
Polislin Fabrice Wonang, Wenceslas Cyprien Minsta Mi Edoux, Odette Melachio Tiokang, Georges Collince Fouokeng, Alain B. Moubissi, Tchoffo Martin   +5 more
doaj   +2 more sources

Optimization of Random Telegraph Noise Characteristics in Memristor for True Random Number Generator

Advanced Intelligent Systems, 2023
Memristor devices can be utilized for various computing applications, and stochastic computing is one of them. The intrinsic stochastic characteristics of the memristor cause unpredictable current fluctuations by the capture and emission of electrons in ...
Min Suk Song, Tae-Hyeon Kim, Hwiho Hwang, Suhyeon Ahn, Hussein Nili, Hyungjin Kim   +5 more
doaj   +1 more source

Quantitative Electron Beam-Single Atom Interactions Enabled by Sub-20-pm Precision Targeting. [PDF]

Adv Sci (Weinh)
Atomic lock‐on (ALO) is a rapid, low‐dose in situ technique in scanning transmission electron microscopy (STEM) that achieves sub‐20 picometer (pm) beam positioning. A sparse annular scan collects positional information while avoiding irradiation of the target site.
Roccapriore KM, Ross FM, Klein J.
europepmc   +2 more sources

New high resolution Random Telegraph Noise (RTN) characterization method for resistive RAM [PDF]

Solid-State Electronics, 2015
Random Telegraph Noise (RTN) is one of the main reliability problems of resistive switching-based memories. To understand the physics behind RTN, a complete and accurate RTN characterization is required. The standard equipment used to analyse RTN has a typical time resolution of ∼2 ms which prevents evaluating fast phenomena.
Maestro Izquierdo, Marcos, Diaz-Fortuny, Javier, Crespo Yepes, Albert, Bargallo Gonzalez, Mireia, Martin Martinez, Javier, Rodríguez Martínez, Rosana, Nafría i Maqueda, Montserrat, Campabadal, Francesca, Aymerich Humet, Xavier   +8 more
openaire   +3 more sources

Proposition of Adaptive Read Bias: A Solution to Overcome Power and Scaling Limitations in Ferroelectric-Based Neuromorphic System. [PDF]

Adv Sci (Weinh)
A novel biasing scheme called adaptive read bias (ARB) is proposed to address the inherent trade‐offs between power efficiency and scalability in neuromorphic systems using ferroelectric tunnel junctions (FTJs). By exploiting different noise sensitivities in each neural network, this approach achieves a 61.3% reduction in power consumption and a 91.9 ...
Koo RH, Shin W, Kim S, Im J, Park SH, Ko JH, Kwon D, Kim JJ, Kwon D, Lee JH.   +9 more
europepmc   +2 more sources