Results 71 to 80 of about 1,457 (174)

High fidelity one-qubit operations under random telegraph noise

, 2005
We address the problem of implementing high fidelity one-qubit operations subject to time dependent noise in the qubit energy splitting. We show with explicit numerical results that high fidelity bit flips and one-qubit NOT gates may be generated by ...
C. P. Slichter, H. Geen, H. K. Cummins, Jun Zhang, K. Birgitta Whaley, K. Blum, L. M. K. Vandersypen, M. A. Nielsen, Mikko Möttönen, N. G. van Kampen, Rogerio de Sousa, S. Kogan   +11 more
core   +1 more source

A Review of Performance and Reliability Issues in D Flip‐Flops for Future Artificial Intelligence and Internet of Things Applications

IET Circuits, Devices &Systems, Volume 2025, Issue 1, 2025.
In this paper, various D flip‐flops (FFs) (DFFs) are studied and analyzed based on the performance and reliability effects of different architectures, technology, area, power, delay, and several other key performance parameters of DFFs. Based on these parameters, a few selected DFFs such as C2SFF, conditional‐bridging FF (CBFF)‐S, self‐shut‐off pulsed ...
Syeda Hurmath Juveria, R. Shashank, J. Ajayan, Amit Krishna Dwivedi, D. Nirmal, Shashikant Patil   +5 more
wiley   +1 more source

An Experimental Approach to Characterizing the Channel Local Temperature Induced by Self-Heating Effect in FinFET

IEEE Journal of the Electron Devices Society, 2018
In this paper, we have developed a methodology of a lateral profiling technique of the channel local temperature in 14 nm FinFET, incurred by the self-heating effect (SHE). As SHE happens, the thermal source generated near the drain will dissipate toward
E Ray Hsieh, Meng-Ru Jiang, Jian-Li Lin, Steve S. Chung, Tse Pu Chen, Shih An Huang, Tai-Ju Chen, Osbert Cheng   +7 more
doaj   +1 more source

Noise Probe of the Dynamic Phase Separation in La2/3Ca1/3MnO3

, 2000
Giant Random Telegraph Noise (RTN) in the resistance fluctuation of a macroscopic film of perovskite-type manganese oxide La2/3Ca1/3MnO3 has been observed at various temperatures ranging from 4K to 170K, well below the Curie temperature (TC = 210K).
A. Anane, A. Anane, A. Moreo, B. Raquet, B. Raquet, C. H. Booth, E. L. Nagaev, F. Coppinger, G. B. Alers, H. T. Hardner, J. B. Goodenough, J. C. Tolédano, J. H. Scofield, J. M. D. Coey, J. M. de Teresa, J. W. Lynn, J.-P. Renard, L. P. Gor'kov, M. Fath, M. Jaime, M. Lust Lisa, M. Uehara, N. E. Israeloff, N. K. Todd, P. Schlottmann, P. Xiong, R. D. Merithew, S. von Molnár, S. von Molnár, S. von Molnár, S. Wirth, T. Kasuya, V. Podzorov, Y. Tokura, Z. Rubin   +34 more
core   +1 more source

Electrodes for High‐𝜅 Molecular Crystal Antimony Trioxide Gate Dielectrics for 2D Electronics

Advanced Electronic Materials, Volume 10, Issue 11, November 2024.
Wafer‐scale deposition of high‐𝜅 gate dielectric on 2D materials is crucial for applications in nano‐electronics, and antimony trioxide (Sb2O3) has shown promising results. It is shown that the choice of contact is critical, as the chemistry at the Sb2O3/contact interface dictates the dielectric performance.
Alok Ranjan, Lunjie Zeng, Eva Olsson
wiley   +1 more source

Lifetime Improvement of 28 nm Resistive Random Access Memory Chip by Machine Learning‐Assisted Prediction Model Collaborated with Resurrection Algorithm

Advanced Electronic Materials, Volume 10, Issue 5, May 2024.
The physical model of resistive random access memory (RRAM) is well fitting quantum point contact (QPC) model. Based on the data set from RRAM chips, the long‐short time memory (LSTM) prediction model is proposed to predict endurance. A resurrection algorithm is proposed to improve the stability and longevity of RRAM chips.
Xu Zheng, Lizhou Wu, Yuanlu Xie, Jinru Lai, Wenxuan Sun, Jie Yu, Danian Dong, Zhaoan Yu, Xiaoyong Xue, Bing Chen, Yan Yang, Xiaoxin Xu, Qi Liu, Ming Liu   +13 more
wiley   +1 more source

Temperature Dependent Variations of Low-Frequency Noise Sources in Cryogenic Short-Channel Bulk MOSFETs

IEEE Access
This study investigated changes in low-frequency noise sources associated with short-channel bulk metal-oxide-semiconductor field-effect transistors (MOSFETs) by analyzing random telegraph noise (RTN) from 300 K down to 3 K.
Takumi Inaba, Hiroshi Oka, Hidehiro Asai, Hiroshi Fuketa, Shota Iizuka, Kimihiko Kato, Shunsuke Shitakata, Koichi Fukuda, Takahiro Mori   +8 more
doaj   +1 more source

Do micromagnets expose spin qubits to charge and Johnson noise?

, 2015
An ideal quantum dot spin qubit architecture requires a local magnetic field for one-qubit rotations. Such an inhomogeneous magnetic field, which could be implemented via a micromagnet, couples the qubit subspace with background charge fluctuations ...
Culcer, Dimitrie, Joynt, Robert, Kha, Allen   +2 more
core   +1 more source

Prediction of Random Telegraph Noise-Induced Threshold Voltage Shift and Its Scaling Dependency Using Machine Learning

IEEE Journal of the Electron Devices Society
Random telegraph noise (RTN) shifts the threshold voltage (Vt) of 3D NAND flash memory cells, making it a key factor of the device malfunction. The aim of this study is to predict the distribution of RTN induced ${\mathrm { V}}_{\mathrm { t}}$ shift in
Eunseok Oh, Hyungcheol Shin
doaj   +1 more source

Design of Power- and Variability-Aware Nonvolatile RRAM Cell Using Memristor as a Memory Element

IEEE Journal of the Electron Devices Society, 2019
A 3 CNFETs and 2 memristors-based half-select disturbance free 3T2R resistive RAM (RRAM) cell is proposed in this paper. While the two memristors act as the nonvolatile memory elements, CNFETs are employed as high-performance switches.
Soumitra Pal, Subhankar Bose, Wing-Hung Ki, Aminul Islam   +3 more
doaj   +1 more source