Evidence of contact-induced variability in industrially-fabricated highly-scaled MoS2 FETs
Evidence of microscopic inhomogeneities of the side source/drain contacts in 300 mm wafer integrated MoS2 field-effect transistors is presented. In particular, the presence of a limited number of low Schottky barrier spots through which channel carriers ...
Luca Panarella +13 more
doaj +1 more source
Memory Effects in High-Dimensional Systems Faithfully Identified by Hilbert-Schmidt Speed-Based Witness. [PDF]
Mahdavipour K +4 more
europepmc +1 more source
Disentanglement Dynamics in Nonequilibrium Environments. [PDF]
Chen M, Chen H, Han T, Cai X.
europepmc +1 more source
A RRAM-Based True Random Number Generator with 2T1R Architecture for Hardware Security Applications. [PDF]
Peng B, Wu Q, Wang Z, Yang J.
europepmc +1 more source
Effect of high-pressure D2 and H2 annealing on LFN properties in FD-SOI pTFET. [PDF]
Shin HJ +6 more
europepmc +1 more source
Investigation of Program Efficiency Overshoot in 3D Vertical Channel NAND Flash with Randomly Distributed Traps. [PDF]
Park C +5 more
europepmc +1 more source
Atomistic Origin of RTN-like Centers Created and Annihilated by RRAM Write Processes. [PDF]
Solomon P +5 more
europepmc +1 more source
Spatially resolved random telegraph fluctuations of a single trap at the Si/SiO2 interface. [PDF]
Cowie M +4 more
europepmc +1 more source
A thousand-state optoelectronic memory for high-precision spatiotemporal encoding. [PDF]
Zhou G +5 more
europepmc +1 more source
Bi2O2Se-Based True Random Number Generator for Security Applications. [PDF]
Liu B +11 more
europepmc +1 more source

