Results 11 to 20 of about 2,511 (146)
Noise Suppression in Organic Photodiodes: A Comprehensive Review of Mechanistic Insights and Design Principles. [PDF]
SmallOrganic photodiodes are limited by dark current and excess low‐frequency noise. This review synthesizes mechanisms of noise, links to three leakage pathways, and unifies measurement practice with device design. By outlining energetics, morphology, and interface strategies, it provides validated routes to lower noise floors and higher detectivity across
Lee GM, Kim TH, Kim Y, Shim JW.
europepmc +2 more sources
Neuromodulation: Technology at the Neural Interface, EarlyView., 2021 Abstract Objectives Obsessive–compulsive disorder (OCD) is a psychiatric disorder with alterations of cortico‐striato‐thalamo‐cortical loops and impaired performance monitoring. Electrophysiological markers such as conflict‐related medial frontal theta (MFT) and error‐related negativity (ERN) may be altered by clinically effective deep brain ...
Elena Sildatke +9 more
wiley +1 more source
Visualisation Techniques for Random Telegraph Signals in MOSFETs [PDF]
, 2004 In the study of LF noise in MOSFETS, it has become clear that Random Telegraph Signals (RTS) are dominant. When a MOSFET is subjected to large-signal excitation, the RTS noise is influenced.
Hoekstra, Erik +4 more
core +11 more sources
Results in Physics, 2020 The dark current random telegraph signal (DC-RTS) has been investigated in a four-transistor pinned photodiode 0.18-μm backside illuminated CMOS image sensor (BSI CIS). The sensors were irradiated by high energy protons of 50, 60 and 70 MeV, respectively.
Bingkai Liu +9 more
doaj +1 more source
Theory of slow traps and random telegraph signals in ultra-small planar MOSFETs
AIP Advances, 2023 It is shown that ultra-small MOSFETs with heavily doped substrates contain a significant concentration of slow traps in their space-charge regions. Such a trap arises due to random doping fluctuations and is created if a few shallow impurities form a ...
B. I. Fuks
doaj +1 more source
IEEE Journal of the Electron Devices Society, 2021 It is difficult to measure the random telegraph noises (RTN) of MOSFET subthreshold currents at the sub-pA level directly and accurately. In this work, we used a charge integration method similar to the operation of the CMOS image sensors (CIS) to ...
Calvin Yi-Ping Chao +7 more
doaj +1 more source
Evidence of a novel source of random telegraph signal in CMOS image sensors [PDF]
, 2011 This letter reports a new source of dark current random telegraph signal in CMOS image sensors due to meta-stable Shockley-Read-Hall generation mechanism at oxide interfaces.
Gaillardin, Marc +4 more
core +1 more source
Localization of Dark Current Random Telegraph Signal sources in pinned photodiode CMOS Image Sensors [PDF]
, 2017 This work presents an analysis of Dark Current Random Telegraph Signal (DC-RTS) in CMOS Image Sensors (CIS). The objective is to provide new insight on RTS in modern CIS by determining the localization of DC-RTS centers and the oxide interfaces involved.
Durnez, Clémentine +5 more
core +1 more source
RTS noise impact in CMOS image sensors readout circuit [PDF]
, 2010 CMOS image sensors are nowadays widely used in imaging applications even for high end applications. This is really possible thanks to a reduction of noise obtained, among others, by Correlated Double Sampling (CDS) readout.
Magnan, Pierre +1 more
core +1 more source
Detection and analysis of random telegraph signal noise in P-MOSFET
Dianzi Jishu Yingyong, 2018 Power metal oxide semiconductor FET(P-MOSFET)is the core device that forms the power communication power，its reliability directly affects the safe and stable operation of power communication. Random telegraph signal(RTS) noise is a sensitive parameter to
Fan Xinxin +3 more
doaj +1 more source