Results 21 to 30 of about 2,511 (146)

Modeling random telegraph noise under switched bias conditions using cyclostationary RTS noise [PDF]

, 2003
In this paper, we present measurements and simulation of random telegraph signal (RTS) noise in n-channel MOSFETs under periodic large signal gate-source excitation (switched bias conditions).
Klumperink, Eric A.M., Nauta, Bram, Vandamme, L.K.J., Wel, Arnoud P. van der   +3 more
core   +3 more sources

Random Telegraph Signal Phenomena in Ultra Shallow p⁺n Silicon Avalanche Diodes

IEEE Journal of the Electron Devices Society, 2018
An extensive time domain analysis of the random telegraph signal (RTS) phenomena in silicon avalanche diodes is presented. Experiments show two distinct types of RTSs classified herein, on the basis of the temporal behavior of the amplitude, as the ...
Vishal Agarwal, Anne-Johan Annema, Satadal Dutta, Raymond J. E. Hueting, Lis K. Nanver, Bram Nauta   +5 more
doaj   +1 more source

Analysis and Validation of Low-Frequency Noise Reduction in MOSFET Circuits Using Variable Duty Cycle Switched Biasing

IEEE Journal of the Electron Devices Society, 2018
In MOS transistors, low-frequency noise phenomena such as random telegraph signal (RTS), burst, and flicker or 1/f noise are usually attributed to the random nature of the trap state of defects present at the gate Si-SiO2 interface.
Kapil Jainwal, Mukul Sarkar, Kushal Shah
doaj   +1 more source

1/ ${f}^{\gamma}$ Low Frequency Noise Model for Buried Channel MOSFET

IEEE Journal of the Electron Devices Society, 2020
The Low Frequency Noise (LFN) in MOSFETs is critical to Signal-to-Noise Ratio (SNR) demanding circuits. Buried Channel (BC) MOSFETs are commonly used as the source-follower transistors for CCDs and CMOS image sensors (CIS) for lower LFN.
Shi Shen, Jie Yuan
doaj   +1 more source

Proton induced leakage current in CCDs [PDF]

, 2003
The effect of different proton fluences on the performance of two E2V Technologies CCD47-20 devices was investigated with particular emphasis given to the analysis of 'random telegraph signal' (RTS) generation, bright pixel generation and induced changes
Ambrosi, RM, Holland, AD, Hutchinson, IB, Robbins, MS, Smith, DR   +4 more
core   +1 more source

Low Frequency Noise Reduction Using Multiple Transistors With Variable Duty Cycle Switched Biasing

IEEE Journal of the Electron Devices Society, 2015
Randomization of the trap state of defects present at the gate Si-SiO2 interface of MOSFET is responsible for the low-frequency noise phenomena such as random telegraph signal (RTS) and 1/f noise.
Kapil Jainwal, Kushal Shah, Mukul Sarkar
doaj   +1 more source

Dark Current Random Telegraph Signals in Solid-State Image Sensors [PDF]

, 2013
This paper focuses on the Dark Current-Random Telegraph Signal (DC-RTS) in solid-state image sensors. The DCRTS is investigated in several bulk materials, for different surface interfaces and for different trench isolation interfaces.
Bardoux, Alain, Geoffray, Hervé, Gilard, Olivier, Girard, Sylvain, Goiffon, Vincent, Magnan, Pierre, Raine, Mélanie, Robbins, Mark S., Tauziède, Laurie, Virmontois, Cédric   +9 more
core   +4 more sources

Total Ionizing Dose Radiation-Induced Dark Current Random Telegraph Signal in Pinned Photodiode CMOS Image Sensors [PDF]

, 2018
In this work, several studies on Total Ionizing Dose effects on Pinned Photodiode CMOS images sensors are presented. More precisely, the evolution of a parasitic signal called Random Telegraph Signal is analysed through several photodiode designs.
Durnez, Clémentine, Goiffon, Vincent, Le Roch, Alexandre, Magnan, Pierre, Marcandella, Claude, Paillet, Philippe, Rizzolo, Serena, Rubaldo, Laurent, Virmontois, Cédric   +8 more
core   +1 more source

Random Telegraph Noises in CMOS Image Sensors Caused by Variable Gate-Induced Sense Node Leakage Due to X-Ray Irradiation

IEEE Journal of the Electron Devices Society, 2019
The effects of X-ray irradiation on the random noises, especially the random telegraph noises (RTN), of a 45-nm on 65-nm stacked CMOS image sensor with 8.3M 1.1 μm pixels are investigated.
Calvin Yi-Ping Chao, Thomas M.-H. Wu, Shang-Fu Yeh, Kuo-Yu Chou, Honyih Tu, Chih-Lin Lee, Chin Yin, Philippe Paillet, Vincent Goiffon   +8 more
doaj   +1 more source

Random telegraph signals in proton irradiated CCDs and APS [PDF]

, 2008
Random telegraph dark signal fluctuations have been studied in two types of CCD and two types of CMOS active pixel sensor after proton irradiation at 1.5, 10 and 60 MeV.
Goiffon, Vincent, Hopkinson, Gordon R., Mohammadzadeh, Ali   +2 more
core   +1 more source