Results 101 to 110 of about 55,048 (148)

Ion beam enhanced magnetron reactive ion etching

Applied Physics Letters, 1987
A new dry etching technique is described which allows for decoupling of the chemical etch component from the ionic (physical) component which cannot be achieved in other conventional plasma processing methods. A magnetically confined rf plasma of SF6 was used to contribute a reactive chemical flux with ion bombardment energies of less than 50 eV.
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Reactive ion etching for submicron structures

Journal of Vacuum Science and Technology, 1981
The etch resistance of PMMA was measured under various reactive ion etching conditions and compared with that of silicon dioxide, silicon and Shipley AZ 1350 resist. The resulting profiles transferred into the substrates masked with PMMA were also studied under various reactive ion etching conditions.
J. D. Chinn, I. Adesida, E. D. Wolf, R. C. Tiberio   +3 more
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Reactive Ion Etching of Polymer Films

International Polymer Processing, 1989
Abstract The need for nanometer-sized features in integrated circuits calls for the use of dry-etching techniques using glow-discharge plasmas. The reactive ion etching (RIE) mode in which there is a large difference in potential between the gas phase and the solid surface yields particularly desirable, straight-walled etched structures.
B. C. Dems, F. Rodriguez, C. M. Solbrig, Y.M.N. Namaste, S. K. Obendorf   +4 more
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Role of ions in reactive ion etching

Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, 1994
Energetic ion bombardment is responsible for the anisotropic etching which can be obtained in reactive ion etching. This has been recognized for many years but the detailed mechanisms involved in this process are still not well understood. In this paper, the various phenomena resulting from ion bombardment of a surface in a reactive gas glow discharge ...
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Damage to Si substrates during SiO2 etching: A comparison of reactive ion etching and magnetron-enhanced reactive ion etching

Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena, 1994
The damage and contamination effects present in silicon substrates from both reactive ion etching and magnetron-enhanced reactive ion etching of SiO2 have been examined for various overetch percentages using spectroscopic ellipsometry (SE) and secondary ion mass spectroscopy (SIMS).
Tieer Gu, R. A. Ditizio, S. J. Fonash, O. O. Awadelkarim, J. Ruzyllo, R. W. Collins, H. J. Leary   +6 more
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Radial Etch Rate Nonuniformity in Reactive Ion Etching

Journal of The Electrochemical Society, 1984
A study was performed to determine some of the causes of the edge‐to‐center "bullseye" clearing pattern, in which the etch rate decreases monotonically from the wafer periphery to its center, observed when certain films are etched in a parallel‐plate reactive ion etching system.
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Technology of reactive ion etching

1998
Abstract The original meaning of ‘etching’ is ‘to eat’; the process of removing something from an object. Moreover, it is impressive that another original meaning of it is ‘to feed’. In fact, reactive ion etching (RIE) consists of two processes; ‘to eat’ and ‘to feed’.
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Dimensionless parameters of reactive ion etching

Proceedings., 39th Electronic Components Conference, 2003
The derivation and character of dimensionless parameters for the semiconductor manufacturing process of reactive ion etching (RIE) in generic form are discussed. Data from characterizations of a variety of films processed under a variety of etching regimes to establish the validity of derived parameters are presented. Fundamental realizations regarding
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Deep Reactive Ion Etching

2010
Laermer, Franz, Franssila, Sami, Sainiemi, Lauri, Kolari, Kai   +3 more
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Sidewall Tapering in Reactive Ion Etching

Journal of The Electrochemical Society, 1985
On signale un phenomene de retrecissement suivant les parois laterales en gravure ionique reactive, avec une pente ∼75°. Une facette du masque de photoresist se forme a cause de la variation angulaire de la vitesse de perte de resist. L'angle de la facette avec le plan vertical est d'environ 16° et sa vitesse de propagation plus de deux fois la vitesse
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