Nanostructuring lithium niobate substrates by focused ion beam milling
, 2005 We report on two novel ways for patterning Lithium Niobate (LN) at submicronic scale by means of focused ion beam (FIB) bombardment. The first method consists of direct FIB milling on LiNbO3 and the second one is a combination of FIB milling on a ...
A. Sabac +11 more
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In vivo measurements with robust silicon-based multielectrode arrays with extreme shaft lengths [PDF]
, 2013 In this paper, manufacturing and in vivo testing of extreme-long Si-based neural microelectrode arrays are presented. Probes with different shaft lengths (15–70 mm) are formed by deep reactive ion etching and have been equipped with platinum electrodes ...
Baracskay, Péter +7 more
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Metal mask free dry-etching process for integrated optical devices applying highly photostabilized resist. [PDF]
, 2006 Photostabilization is a widely used post lithographic resist treatment process, which allows to harden the resist profile in order to maintain critical dimensions and to increase selectivity in subsequent process steps such as reactive ion etching.
Driessen, A. +3 more
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Tuning Metasurface Dimensions by Soft Nanoimprint Lithography and Reactive Ion Etching
Advanced Photonics Research, 2022 Metasurfaces are ultrathin and flat layers of subwavelength nanostructures composed of metallic or high‐refractive‐index materials. They can alter lightwave properties effectively and show significant application potential in various nanophotonic ...
Xinyi Cao +6 more
doaj +1 more source
Phosphorus oxide gate dielectric for black phosphorus field effect transistors
, 2018 The environmental stability of the layered semiconductor black phosphorus (bP) remains a challenge. Passivation of the bP surface with phosphorus oxide, POx, grown by a reactive ion etch with oxygen plasma is known to improve photoluminescence efficiency
Botton, G. A. +9 more
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Two-step Fabrication of Large Area SiO2/Si Membranes
Medžiagotyra, 2012 Two-step fabrication technique of SiO2/Si membrane combining the deep local etching of double side polished and thermally oxidized silicon <100> wafer in tetramethylammonium hydroxide (TMAH) water solution and SF6/O2 reactive ion etching is ...
Viktoras GRIGALIŪNAS +7 more
doaj +1 more source
High temperature reactive ion etching of iridium thin films with aluminum mask in CF4/O2/Ar plasma
AIP Advances, 2016 Reactive ion etching (RIE) technology for iridium with CF4/O2/Ar gas mixtures and aluminum mask at high temperatures up to 350 °C was developed. The influence of various process parameters such as gas mixing ratio and substrate temperature on the etch ...
Chia-Pin Yeh +3 more
doaj +1 more source
Silicone engineered anisotropic lithography for ultrahigh-density OLEDs
Nature Communications, 2022 Ultrahigh-resolution patterning with high-throughput and high-fidelity is highly in demand for expanding the potential of OLEDs. Here, the authors report that silicone-incorporated organic light-emitting semiconductors can achieve anisotropic lithography
Hyukmin Kweon +13 more
doaj +1 more source
The black silicon method: a universal method for determining the parameter setting of a fluorine-based reactive ion etcher in deep silicon trench etching with profile control [PDF]
, 1994 Very deep trenches (up to 200 µm) with high aspect ratios (up to 10) in silicon and polymers are etched using a fluorine-based plasma (SF6/O2/CHF3). Isotropic, positively and negatively (i.e.
de Boer, Meint J. +4 more
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Atomic Depth Image Transfer of Large-Area Optical Quartz Materials Based on Pulsed Ion Beam
MicromachinesThe high-efficiency preparation of large-area microstructures of optical materials and precision graphic etching technology is one of the most important application directions in the atomic and near-atomic-scale manufacturing industry.
Shuyang Ran +7 more
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