Results 41 to 50 of about 55,048 (148)

Ga^+ beam lithography for nanoscale silicon reactive ion etching [PDF]

open access: yes, 2010
By using a dry etch chemistry which relies on the highly preferential etching of silicon, over that of gallium (Ga), we show resist-free fabrication of precision, high aspect ratio nanostructures and microstructures in silicon using a focused ion beam ...
Chhim, B.   +3 more
core   +1 more source

Formation of distinctive structures of GaN by inductively-coupled-plasma and reactive ion etching under optimized chemical etching conditions

open access: yesAIP Advances, 2017
We focused on inductively coupled plasma and reactive ion etching (ICP–RIE) for etching GaN and tried to fabricate distinctive GaN structures under optimized chemical etching conditions.
N. Okada   +8 more
doaj   +1 more source

The role of fluorine-containing ultra-thin layer in controlling boron thermal diffusion into silicon

open access: yesJournal of Telecommunications and Information Technology, 2023
We have investigated the influence of silicon dioxide reactive ion etching (RIE) parameters on the composition of the polymer layer that is formed during this process on top of the etched layer, and finally, the role of this layer in high- temperature ...
Małgorzata Kalisz   +3 more
doaj   +1 more source

Nd-doped aluminum oxide integrated amplifiers at 880 nm, 1060 nm, and 1330 nm [PDF]

open access: yes, 2010
Neodymium-doped Al2O3 layers were deposited on thermally oxidized Si substrates and channel waveguides were patterned using reactive-ion etching. Internal net gain on the Nd3+ transitions at 880, 1064, and 1330 nm was investigated,\ud yielding a maximum ...
Ay, F.   +4 more
core   +1 more source

Plasma Processing of Large Curved Surfaces for SRF Cavity Modification [PDF]

open access: yes, 2014
Plasma based surface modification of niobium is a promising alternative to wet etching of superconducting radio frequency (SRF) cavities. The development of the technology based on Cl2/Ar plasma etching has to address several crucial parameters which ...
Im, Do   +5 more
core   +4 more sources

A Comparative Study on the Effects of Passivation Methods on the Carrier Lifetime of RIE and MACE Silicon Micropillars

open access: yesApplied Sciences, 2019
Silicon micropillars have been suggested as one of the techniques for improving the efficiency of devices. Fabrication of micropillars has been done in several ways—Metal Assisted Chemical Etching (MACE) and Reactive Ion Etching (RIE) being the ...
Amal Kabalan
doaj   +1 more source

Redeposition-Free Deep Etching in Small KY(WO4)2 Samples

open access: yesMicromachines, 2020
KY(WO4)2 is a promising material for on-chip laser sources. Deep etching of small KY(WO4)2 samples in combination with various thin film deposition techniques is desirable for the manufacturing of such devices.
Simen Mikalsen Martinussen   +3 more
doaj   +1 more source

Guidelines for etching silicon MEMS structures using fluorine high-density plasmas at cryogenic temperatures [PDF]

open access: yes, 2002
This paper presents guidelines for the deep reactive ion etching (DRIE) of silicon MEMS structures, employing SF/sub 6//O/sub 2/-based high-density plasmas at cryogenic temperatures.
Boer, Meint J. de   +6 more
core   +2 more sources

Nanofabrication of Vertically Aligned 3D GaN Nanowire Arrays with Sub-50 nm Feature Sizes Using Nanosphere Lift-off Lithography

open access: yesProceedings, 2017
Vertically aligned 3D gallium nitride (GaN) nanowire arrays with sub-50 nm feature sizes were fabricated using a nanosphere lift-off lithography (NSLL) technique combined with hybrid top-down etching steps (i.e., inductively coupled plasma dry reactive ...
Tony Granz   +12 more
doaj   +1 more source

Lithographic band gap tuning in photonic band gap crystals [PDF]

open access: yes, 1996
We describe the lithographic control over the spectral response of three-dimensional photonic crystals. By precise microfabrication of the geometry using a reproducible and reliable procedure consisting of electron beam lithography followed by dry ...
Arbet-Engels, V.   +3 more
core   +1 more source

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