Results 51 to 60 of about 55,048 (148)
Materials Research Express, 2021 In this paper, an alternative selective dry etching of p-GaN over InAlN was studied as a function of the ICP source powers, RF chuck powers and process pressures by using inductively coupled plasma reactive ion etching (ICP RIE) system.
A Toprak, D Yılmaz, E Özbay
doaj +1 more source
Electronic cooling of a submicron-sized metallic beam [PDF]
, 2008 We demonstrate electronic cooling of a suspended AuPd island using superconductor-insulator-normal metal tunnel junctions. This was achieved by developing a simple fabrication method for reliably releasing narrow submicron sized metal beams.
A. O. Niskanen +8 more
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Diamond waveguides fabricated by reactive ion etching
Optics Express, 2008 We demonstrate for the first time the feasibility of all-diamond integrated optic devices over large areas using a combination of photolithography, reactive ion etching (RIE) and focused ion beam (FIB) techniques. We confirm the viability of this scalable process by demonstrating guidance in a two-moded ridge waveguide in type 1b single crystal diamond.
Mark P, Hiscocks +5 more
openaire +2 more sources
Exploring Vacuum Casting Techniques for Micron and Submicron Features [PDF]
, 2004 A study of resolution limits in standard rapid prototyping vacuum cast molding processes and adaptation of this technique to reach submicron accuracy is proposed.
Denoual, M., Lepioufle, B., Mognol, P.
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Nature Communications, 2019 For organic light-emitting diodes (OLEDs) to reach their potential for lighting applications, improved light out-coupling using industry-compatible methods are required.
Yungui Li +11 more
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Faraday cage angled-etching of nanostructures in bulk dielectrics
, 2016 For many emerging optoelectronic materials, heteroepitaxial growth techniques do not offer the same high material quality afforded by bulk, single-crystal growth.
Burek, Michael J. +3 more
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Low temperature sacrificial wafer bonding for planarization after very deep etching [PDF]
, 1994 A new technique, at temperatures of 150°C or 450°C, that provides planarization after a very deep etching step in silicon is presented. Resist spinning and layer patterning as well as realization of bridges or cantilevers across deep holes becomes ...
Berenschot, J.W. +3 more
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Er-doped aluminium oxide waveguide amplifiers [PDF]
, 2008 Within the EU STREP project "Photonic integrated devices in activated amorphous and crystalline oxides" (PI-OXIDE, http://pi-oxide.el.utwente.nl/), 6 partners are developing integrated optical devices based on erbium-doped layers of amorphous $Al_2O_3 ...
Pollnau, M.
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Fabrication of mirror templates in silica with micron-sized radii of curvature [PDF]
, 2016 We present the fabrication of exceptionally small-radius concave microoptics on fused silica substrates using CO2 laser ablation and subsequent reactive ion etching.
Najer, Daniel +4 more
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RF reactor with asymmetrical electrodes for reactive ion etching of semiconductors [PDF]
Технологія та конструювання в електронній апаратурі, 2011 Results of experimental and theoretical study of RF CCP reactor for reactive ion etching of semiconductors are presented. Breakdown curve and domain of the discharge existence are measured in various gases (argon, fluorocarbon, oxygen).
S. V. Dudin +3 more
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