Results 211 to 220 of about 4,565 (255)

A model for reactive sputtering with magnetrons

Vacuum, 1989
Abstract Reactive sputtering of nitrides and oxides are used to produce compound thin films. Recently presented models, for small amounts of reactive gas (
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Rotating cylindrical magnetron sputtering: Simulation of the reactive process

Journal of Applied Physics, 2010
A rotating cylindrical magnetron consists of a cylindrical tube, functioning as the cathode, which rotates around a stationary magnet assembly. In stationary mode, the cylindrical magnetron behaves similar to a planar magnetron with respect to the influence of reactive gas addition to the plasma.
Depla, D., Li, X.Y., Mahieu, S., van Aeken, K., Leroy, W.P., Haemers, J., de Gryse, R., Bogaerts, Annemie   +7 more
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Reactive magnetron sputtering of titanium and its oxides

Journal of Vacuum Science and Technology, 1982
Ti and TiOx films have been made by vacuum and reactive evaporation, respectively, using electron beam heating. However, magnetron sputtering of Ti and its oxides is of interest because of the system’s simplicity and possible applications in the semiconductor and metallurgical industries. An investigation has been made into the discharge and deposition
A. R. Nyaiesh, L. Holland
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Characteristics of reactive magnetron sputtered ZnO films

Proceedings., IEEE Ultrasonics Symposium, 2003
Highly oriented, dense, and fine-grain polycrystalline ZnO films with an excellent surface flatness have been produced. The thin films were deposited by DC conical reactive magnetron sputtering. X-ray scanning and scanning electron microscopy were used to evaluate film crystalline structure, and electromechanical measurements were used to measure ...
Perluzzo, G., Jen, C. K., Adler, E. L.
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Pulsed magnetron sputtering of reactive compounds

Thin Solid Films, 1999
Abstract The Al, Si and Ti targets were sputtered in a reactive atmosphere of argon & oxygen and argon&nitrogen. The pulsed magnetron power supply generated a series of one polarity 160 kHz puises grouped with 2.5 kHz, The amplitude of negative current pulses was constant and equal to 8 A. Target power was accomplished by varying the number of pulses
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Reactive magnetron sputtered aluminium nitride films

2015 IEEE 15th International Conference on Nanotechnology (IEEE-NANO), 2015
Aluminium nitride (AlN) films have been obtained on glass by reactive magnetron sputtering. Various gas pressures (in the range 0.12 – 0.7 Pa) with four different argon-nitrogen mixtures have been explored. The purpose of this work is to analyze the impact of nitrogen percentage on AlN films from the point of view of the intensity of the (002) peak ...
Daniele Desideri, Enrico Bernardo, Alvise Maschio   +2 more
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Deposition of copper oxide by reactive magnetron sputtering

Metals and Materials International, 2011
Copper oxide films were deposited on silicon substrates by direct current magnetron sputtering of Cu in a mixture of O2 and Ar gases. Oxidation of the target as a result of adsorption or ion-plating of the reactive gases directly affects the discharge current and composition of the deposited films.
J. H. Lee, K. H. Jeong, W. H. Cho, W. J. Ho, H. J. Yang, C. S. Kim, J. G. Lee   +6 more
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Reactive magnetron sputtering of copper, silver, and gold

Thin Solid Films, 2005
Abstract Copper, silver, and gold targets were sputtered in various reactive gas mixtures (Ar–N 2 , Ar–O 2 , and Ar–CH 4 ) to compare the reactivity of noble metal atoms during the sputtering process. The evolution of the film's growth rate and the variation of the reactive gas partial pressure vs.
J.F. Pierson, D. Wiederkehr, A. Billard
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DC reactive magnetron sputtered ZnO films

Journal of Crystal Growth, 1979
Abstract This paper is concerned with a new reactive magnetron sputtering technique using a zinc target and 100% oxygen gas. A solenoid coil around a bell jar was used to cause an increase in the parallel component of the leakage magnetic lines to the target surface. Highly oriented ZnO films ( c -axis orientation) were fabricated on glass substrates
Tomonobu Hata, Toshiharu Minamikawa, Osamu Morimoto, Toshio Hada   +3 more
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Reactivity of RF magnetron sputtered CaSi2 film

Solid State Ionics, 1992
Abstract Layer structured CaSi2 was deposited onto SiO2 glass substrate by RF magnetron sputtering. The films deposited at 400°C were crystalline, having a one-layer type with a hexagonal unit cell of a=3.878 and c=4.982 A , in contrast to the bulk crystal having a six-layer type; the crystals are uniaxially oriented with the (110) plane
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