Results 221 to 230 of about 4,565 (255)

Atomic nitrogen source for reactive magnetron sputtering

Surface and Coatings Technology, 2003
A source of nitrogen atoms is developed in order to use them as reactive species in magnetron sputtering. For that a microwave discharge is used: an electromagnetic surface wave launched by a surfaguide (J. Phys. D: Appl. Phys. 24 (1991) 1025) in a quartz tube sustains a plasma. The surface wave is reflected at each end of the tube by silver reflectors.
Th. Godfroid, J.P. Dauchot, M. Hecq
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Reactive-magnetron-sputtered chromium carbide films

Thin Solid Films, 1989
Abstract Chromium carbide films were deposited by r.f. reactive magnetron sputtering of chromium in an acetylene plasma. The carbon-to-chromium ratio in the films was found to increase with substrate temperature and acetylene partial pressure, resulting in a supersaturated solid solution of carbon in a chromium matrix and the Cr23C6 phase.
Vandna Agarwal, V.D. Vankar, K.L. Chopra
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ECR-Assisted Reactive Magnetron Sputtering of InN

MRS Proceedings, 1994
ABSTRACTThe growth of high-quality thin films of the Group IIIA nitrides is exceedingly difficult given their propensity for nonstoichiometry and the lack of suitable substrates for either homoepitaxial or heteroepitaxial growth. A novel deposition technique, ultrahigh vacuum electron cyclotron resonance-assisted reactive magnetron sputtering, has been
W. A. Bryden, S. A. Ecelberger, M. E. Hawley, T. J. Kistenmacher   +3 more
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On reactive high power impulse magnetron sputtering

Plasma Physics and Controlled Fusion, 2015
High power impulse magnetron sputtering (HiPIMS) is an ionized physical vapor deposition (IPVD) technique that is particularly promising for reactive sputtering applications. However, there are few issues that have to be resolved before the full potential of this technique can be realized.
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Magnetron reactive sputtering of copper-indium-selenide

Solar Cells, 1986
Abstract D.c. magnetron reactive sputtering appears to have great potential for providing the large production volumes that will be required if CuInSe 2 based photovoltaic devices are to make a significant contribution to terrestrial electric power generation.
John A. Thornton, T.C. Lommasson
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Properties of dc magnetron reactively sputtered TiN

Journal of Vacuum Science & Technology B: Microelectronics Processing and Phenomena, 1986
Titanium nitride is of interest for IC fabrication because of its excellent performance as a metallic diffusion barrier. TiN films have been deposited in a batch sputtering system equipped with dc magnetron cathodes, rf substrate bias, and independently controlled Ar and N2 sources. A threshold value of N2 flow exists, above which nitridation of the Ti
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Reactive Magnetron Sputtering of ITO Layers

2023
H. Baránková, L. Bárdoš, P. Cabalka, M. Libra   +3 more
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Instability of the reactive magnetron sputtering process

Journal of Applied Spectroscopy, 1996
A. P. Burmakov, V. A. Zaikov, A. A. Labuda, V. E. Chernyi   +3 more
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Reactive magnetron sputtering on glass

Thin Solid Films, 1981
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Reactive Magnetron Sputtering of the Aluminium Oxide Coating

2016
This contribution deals with design, check and test of deposition parameters for new installed aluminium target. In addition of individual parts of deposition process and hysteresis of sputtering thin films of Al2O3 was verified. This made it possible to determine borders of reactive and metallic mode.
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