Results 31 to 40 of about 4,565 (255)

Electrode and Microstructure Dependence of Oxygen Diffusion in Ferroelectric Hafnium Zirconium Oxide Thin Films

open access: yesAdvanced Functional Materials, EarlyView.
Significant nanoscale oxygen diffusion coefficient variations are measured in ferroelectric hafnium zirconium oxide films with grain boundaries and electrode interfaces exhibiting values 104 times larger than the grain cores. Overall coefficients are 10X larger for films prepared with metal nitride electrodes compared to refractory metals. New insights
Liron Shvilberg   +6 more
wiley   +1 more source

Integrated Field‐Free SOT Domain‐Wall Synapses and MTJ Stochastic Neurons for Hardware Boltzmann Machines

open access: yesAdvanced Functional Materials, EarlyView.
Field‐free spin‐orbit torque domain‐wall synapses integrated with stochastic MTJ neurons enable compact hardware Boltzmann machines. Leveraging intrinsic stochasticity and multi‐level conductance, the system achieves efficient probabilistic learning with high accuracy, demonstrating a scalable spintronic platform for energy‐efficient edge AI.
Aijaz H. Lone   +8 more
wiley   +1 more source

Effect depositions parameters on the characteristics of Ni0.5Co0.5Fe2O4 nanocomposite films prepared by DC reactive magnetron Co-Sputtering technique

open access: yesIraqi Journal of Physics, 2020
In this work, spinel ferrites (NiCoFe2O4) were prepared as thin films by dc reactive dual-magnetron co-sputtering technique. Effects of some operation parameters, such as inter-electrode distance, and preparation conditions such as mixing ratio of argon
Tawfiq S. Mahdi, Firas J. Kadhim
doaj   +1 more source

Nano‐Scale Characterization of Impurities Segregation in Solid Oxide Electrolysis Cells

open access: yesAdvanced Functional Materials, EarlyView.
Cathodic polarization induces impurity segregation in Ni, forming an amorphous Na─Al─Si─O amorphous phase at grain boundaries. Under ultralow oxygen partial pressure, multiple elements dissolve, migrate, and reoxidize within the metal. A patterned model system provides direct nanoscale evidence, clarifying the mechanism of polarization‐driven impurity ...
Zhongtao Ma   +5 more
wiley   +1 more source

OPTICAL CHARACTERISTICS OF ALN THIN FILMS DEPOSITED BY DC MAGNETRON AND ION-BEAM SPUTTERING STUDY

open access: yesДоклады Белорусского государственного университета информатики и радиоэлектроники, 2019
This paper studies the optical characteristics of aluminum nitride thin films deposited by reactive magnetron and ion-beam sputtering. The dependences of the refractive index and absorption coefficient of the films on the percentage of nitrogen in the ...
M. V. Ermolenko   +3 more
doaj  

Opportunities of Semiconducting Oxide Nanostructures as Advanced Luminescent Materials in Photonics

open access: yesAdvanced Materials, EarlyView.
The review discusses the challenges of wide and ultrawide bandgap semiconducting oxides as a suitable material platform for photonics. They offer great versatility in terms of tuning microstructure, native defects, doping, anisotropy, and micro‐ and nano‐structuring. The review focuses on their light emission, light‐confinement in optical cavities, and
Ana Cremades   +7 more
wiley   +1 more source

Formation of titanium oxide thin films by reactive magnetron sputtering

open access: yesДоклады Белорусского государственного университета информатики и радиоэлектроники, 2019
The article presents the results of studies of the dielectric characteristics of titanium oxide films deposited by reactive magnetron sputtering of a Ti target in an Ar/O2 gas mixture.
N. Villa, D. A. Golosov, T. D. Nguyen
doaj   +1 more source

Nanostructured Materials Based on Thin Films and Nanoclusters for Hydrogen Gas Sensing

open access: yesProceedings, 2021
In this paper, we present two approaches to synthesize nanostructured metal oxide semiconductors in a form of multi-layer thin films later assembled as a conductometric gas-sensors. The first approach produces a combination of thin solid film of tungsten
Stanislav Haviar   +3 more
doaj   +1 more source

Flexible Ag2Se‐Based Thermoelectrics: Fundamentals, Processing, and Device Applications

open access: yesAdvanced Materials, EarlyView.
Ag2Se‐based thermoelectrics are reviewed from fundamental transport mechanisms to flexible device integration. Crystal structure, defect chemistry, and band features are correlated with performance optimization strategies and scalable fabrication routes.
Jie Qin   +5 more
wiley   +1 more source

A low-cost and convenient route of fabricating GaN films with P-type mixed microcrystalline and amorphous structure deposited via Ga target of magnetron sputtering

open access: yesAPL Materials
GaN, a third-generation semiconductor, has gained widespread attention owing to its high temperature resistance, wide bandgap, and high critical breakdown electric fields.
Xueqing Chen   +9 more
doaj   +1 more source

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