Results 11 to 20 of about 93,152 (339)

A Machine Learning-based Framework for Predictive Maintenance of Semiconductor Laser for Optical Communication [PDF]

, 2022
Semiconductor lasers, one of the key components for optical communication systems, have been rapidly evolving to meet the requirements of next generation optical networks with respect to high speed, low power consumption, small form factor etc. However, these demands have brought severe challenges to the semiconductor laser reliability.
arxiv   +1 more source

Degradation Characteristics and Mechanism of High Speed 850 nm Vertical-Cavity Surface-Emitting Laser during Accelerated Aging

Photonics, 2022
The degradation process of Vertical-cavity Surface-emitting lasers with high speed and a central wavelength at 850 nm is investigated via constant-current accelerated aging experiments.
Jide Zhang, Wenyuan Liao, Xiaohua Wang, Guoguang Lu, Shaohua Yang, Zhipeng Wei   +5 more
doaj   +1 more source

Direct Defect-Level Analysis of Metal–Insulator–Metal Capacitor Using Internal Photoemission Spectroscopy

IEEE Journal of the Electron Devices Society, 2021
Barrier height ( $\phi _{b}$ ), trap state, bandgap ( $E_{g}$ ), and band alignment information of the metal–ZrO2–metal capacitor have been extracted using internal photoemission (IPE) system.
Tae Jin Yoo, Hyeon Jun Hwang, Soo Cheol Kang, Sunwoo Heo, Ho-In Lee, Young Gon Lee, Hokyung Park, Byoung Hun Lee   +7 more
doaj   +1 more source

Effect of Thickness of InP Nucleation Layer on the Two-Step Growth of InP on Si(001)

Crystals, 2022
InP nucleation layers with different thicknesses were grown on Si(001) substrates by gas-source molecular beam epitaxy (GSMBE), and the two-step growth technique was used to overcome the large lattice mismatch (8%) between the InP nucleation layer and Si
Silu Yan, Hongliang Lv, Yuming Zhang, Shizheng Yang   +3 more
doaj   +1 more source

Novel Step Floating Islands VDMOS with Low Specific on-Resistance by TCAD Simulation

Micromachines, 2022
A novel VDMOS with Step Floating Islands VDMOS (S-FLI VDMOS) is proposed for the first time in this letter, in order to optimize the breakdown voltage (BV) and the specific on-resistance (Ron,sp).
Dongyan Zhao, Yubo Wang, Yanning Chen, Jin Shao, Zhen Fu, Baoxing Duan, Fang Liu, Xiuwei Li, Tenghao Li, Xin Yang, Mingzhe Li, Yintang Yang   +11 more
doaj   +1 more source

Degradation Characteristics and Reliability Assessment of 1310 nm VCSEL for Microwave Photonic Link

Applied Sciences, 2022
The long-term reliability of the commercially available vertical-cavity surface-emitting laser (VCSEL) at 1310 nm wavelength is investigated. To do so, a high current accelerated life test is used to evaluate the 1310 nm VCSEL reliability.
Wenyuan Liao, Rui Gao, Yuebo Liu, Jide Zhang, Shuwang Li, Hao Niu, Shaohua Yang, Canxiong Lai   +7 more
doaj   +1 more source

Reliability analysis and reliable operation of three-level ANPC inverter

Frontiers in Energy Research, 2023
The three-level active neutral-point-clamped (3L-ANPC) inverters have been widely used in medium-voltage high-power electrical drives. The purpose of this paper is to achieve the reliable operation for 3L-ANPC inverters by reliability analysis and ...
Xiaolin Zheng, Xiaoxiao Huang, Peiyu Chen, Zhiqiang Chong, Zhongchen Yuan   +4 more
doaj   +1 more source

Reliability Analysis of Component Level Redundant Topologies for solid state Fault Current Limiter [PDF]

, 2020
Experience shows that semiconductor switches in power electronics systems are the most vulnerable components. One of the most common ways to solve this reliability challenge is component-level redundant design. There are four possible configurations for the redundant design in component-level.
arxiv   +1 more source

Investigating the Failure Mechanism of p-GaN Gate HEMTs under High Power Stress with a Transparent ITO Gate

Micromachines, 2023
The channel temperature distribution and breakdown points are difficult to monitor for the traditional p-GaN gate HEMTs under high power stress, because the metal gate blocks the light.
Zhanfei Han, Xiangdong Li, Hongyue Wang, Jiahui Yuan, Junbo Wang, Meng Wang, Weitao Yang, Shuzhen You, Jingjing Chang, Jincheng Zhang, Yue Hao   +10 more
doaj   +1 more source

Phonon Screening of Excitons in Semiconductors: Halide Perovskites and Beyond [PDF]

Phys. Rev. Lett. 127, 067401, 2021, 2021
The ab initio Bethe-Salpeter equation (BSE) approach, an established method for the study of excitons in materials, is typically solved in a limit where only static screening from electrons is captured. Here, we generalize this framework to also include dynamical screening from phonons at lowest order in the electron-phonon interaction.
arxiv   +1 more source