Results 11 to 20 of about 2,093,507 (376)

Nontraditional Design of Dynamic Logics Using FDSOI for Ultra-Efficient Computing

IEEE Journal on Exploratory Solid-State Computational Devices and Circuits, 2023
In this article, we propose a nontraditional design of dynamic logic circuits using fully-depleted silicon-on-insulator (FDSOI) FETs. FDSOI FET allows the threshold voltage ( $V_{\text {t}}$ ) to be adjustable (i.e., low- $V_{\text {t}}$ and high- $V_ ...
Shubham Kumar, Swetaki Chatterjee, Chetan Kumar Dabhi, Yogesh Singh Chauhan, Hussam Amrouch   +4 more
doaj   +1 more source

Development of high reliability semiconductor devices by copper wire bonding.

, 1988
J. Hirota, Y. Shibutani, T. Sugimura, K. Machida, T. Okuda   +4 more
semanticscholar   +3 more sources

Printed temperature sensor array for high-resolution thermal mapping

Scientific Reports, 2022
Fully-printed temperature sensor arrays—based on a flexible substrate and featuring a high spatial-temperature resolution—are immensely advantageous across a host of disciplines.
Tim Bücher, Robert Huber, Carsten Eschenbaum, Adrian Mertens, Uli Lemmer, Hussam Amrouch   +5 more
doaj   +1 more source

Revealing the Mechanism of the Bias Temperature Instability Effect of p-GaN Gate HEMTs by Time-Dependent Gate Breakdown Stress and Fast Sweeping Characterization

Micromachines, 2023
The bias temperature instability (BTI) effect of p-GaN gate high-electron-mobility transistors (HEMTs) is a serious problem for reliability. To uncover the essential cause of this effect, in this paper, we precisely monitored the shifting process of the ...
Xiangdong Li, Meng Wang, Jincheng Zhang, Rui Gao, Hongyue Wang, Weitao Yang, Jiahui Yuan, Shuzhen You, Jingjing Chang, Zhihong Liu, Yue Hao   +10 more
doaj   +1 more source

Enhance Reliability of Semiconductor Devices in Power Converters

Electronics, 2020
As one of the most vulnerable components to temperature and temperature cycling conditions in power electronics converter systems in these application fields as wind power, electric vehicles, drive system, etc., power semiconductor devices draw great ...
M. Nguyen, S. Kwak
semanticscholar   +1 more source

A Machine Learning-based Framework for Predictive Maintenance of Semiconductor Laser for Optical Communication [PDF]

, 2022
Semiconductor lasers, one of the key components for optical communication systems, have been rapidly evolving to meet the requirements of next generation optical networks with respect to high speed, low power consumption, small form factor etc. However, these demands have brought severe challenges to the semiconductor laser reliability.
arxiv   +1 more source

Degradation Characteristics and Mechanism of High Speed 850 nm Vertical-Cavity Surface-Emitting Laser during Accelerated Aging

Photonics, 2022
The degradation process of Vertical-cavity Surface-emitting lasers with high speed and a central wavelength at 850 nm is investigated via constant-current accelerated aging experiments.
Jide Zhang, Wenyuan Liao, Xiaohua Wang, Guoguang Lu, Shaohua Yang, Zhipeng Wei   +5 more
doaj   +1 more source

Direct Defect-Level Analysis of Metal–Insulator–Metal Capacitor Using Internal Photoemission Spectroscopy

IEEE Journal of the Electron Devices Society, 2021
Barrier height ( $\phi _{b}$ ), trap state, bandgap ( $E_{g}$ ), and band alignment information of the metal–ZrO2–metal capacitor have been extracted using internal photoemission (IPE) system.
Tae Jin Yoo, Hyeon Jun Hwang, Soo Cheol Kang, Sunwoo Heo, Ho-In Lee, Young Gon Lee, Hokyung Park, Byoung Hun Lee   +7 more
doaj   +1 more source

Effect of Thickness of InP Nucleation Layer on the Two-Step Growth of InP on Si(001)

Crystals, 2022
InP nucleation layers with different thicknesses were grown on Si(001) substrates by gas-source molecular beam epitaxy (GSMBE), and the two-step growth technique was used to overcome the large lattice mismatch (8%) between the InP nucleation layer and Si
Silu Yan, Hongliang Lv, Yuming Zhang, Shizheng Yang   +3 more
doaj   +1 more source

Novel Step Floating Islands VDMOS with Low Specific on-Resistance by TCAD Simulation

Micromachines, 2022
A novel VDMOS with Step Floating Islands VDMOS (S-FLI VDMOS) is proposed for the first time in this letter, in order to optimize the breakdown voltage (BV) and the specific on-resistance (Ron,sp).
Dongyan Zhao, Yubo Wang, Yanning Chen, Jin Shao, Zhen Fu, Baoxing Duan, Fang Liu, Xiuwei Li, Tenghao Li, Xin Yang, Mingzhe Li, Yintang Yang   +11 more
doaj   +1 more source