Results 11 to 20 of about 119,011 (331)

Revealing the Mechanism of the Bias Temperature Instability Effect of p-GaN Gate HEMTs by Time-Dependent Gate Breakdown Stress and Fast Sweeping Characterization

Micromachines, 2023
The bias temperature instability (BTI) effect of p-GaN gate high-electron-mobility transistors (HEMTs) is a serious problem for reliability. To uncover the essential cause of this effect, in this paper, we precisely monitored the shifting process of the ...
Xiangdong Li, Meng Wang, Jincheng Zhang, Rui Gao, Hongyue Wang, Weitao Yang, Jiahui Yuan, Shuzhen You, Jingjing Chang, Zhihong Liu, Yue Hao   +10 more
doaj   +1 more source

Degradation Characteristics and Mechanism of High Speed 850 nm Vertical-Cavity Surface-Emitting Laser during Accelerated Aging

Photonics, 2022
The degradation process of Vertical-cavity Surface-emitting lasers with high speed and a central wavelength at 850 nm is investigated via constant-current accelerated aging experiments.
Jide Zhang, Wenyuan Liao, Xiaohua Wang, Guoguang Lu, Shaohua Yang, Zhipeng Wei   +5 more
doaj   +1 more source

Effect of Thickness of InP Nucleation Layer on the Two-Step Growth of InP on Si(001)

Crystals, 2022
InP nucleation layers with different thicknesses were grown on Si(001) substrates by gas-source molecular beam epitaxy (GSMBE), and the two-step growth technique was used to overcome the large lattice mismatch (8%) between the InP nucleation layer and Si
Silu Yan, Hongliang Lv, Yuming Zhang, Shizheng Yang   +3 more
doaj   +1 more source

Direct Defect-Level Analysis of Metal–Insulator–Metal Capacitor Using Internal Photoemission Spectroscopy

IEEE Journal of the Electron Devices Society, 2021
Barrier height ( $\phi _{b}$ ), trap state, bandgap ( $E_{g}$ ), and band alignment information of the metal–ZrO2–metal capacitor have been extracted using internal photoemission (IPE) system.
Tae Jin Yoo, Hyeon Jun Hwang, Soo Cheol Kang, Sunwoo Heo, Ho-In Lee, Young Gon Lee, Hokyung Park, Byoung Hun Lee   +7 more
doaj   +1 more source

Novel Step Floating Islands VDMOS with Low Specific on-Resistance by TCAD Simulation

Micromachines, 2022
A novel VDMOS with Step Floating Islands VDMOS (S-FLI VDMOS) is proposed for the first time in this letter, in order to optimize the breakdown voltage (BV) and the specific on-resistance (Ron,sp).
Dongyan Zhao, Yubo Wang, Yanning Chen, Jin Shao, Zhen Fu, Baoxing Duan, Fang Liu, Xiuwei Li, Tenghao Li, Xin Yang, Mingzhe Li, Yintang Yang   +11 more
doaj   +1 more source

Surface free energy and microarray deposition technology [PDF]

, 2007
Microarray techniques use a combinatorial approach to assess complex biochemical interactions. The fundamental goal is simultaneous, large-scale experimentation analogous to the automation achieved in the semiconductor industry.
Aussillous, Blossey, Cheran, Deegan, Deegan, Glen McHale, McHale, Wixforth, Wixforth   +8 more
core   +1 more source

Degradation Characteristics and Reliability Assessment of 1310 nm VCSEL for Microwave Photonic Link

Applied Sciences, 2022
The long-term reliability of the commercially available vertical-cavity surface-emitting laser (VCSEL) at 1310 nm wavelength is investigated. To do so, a high current accelerated life test is used to evaluate the 1310 nm VCSEL reliability.
Wenyuan Liao, Rui Gao, Yuebo Liu, Jide Zhang, Shuwang Li, Hao Niu, Shaohua Yang, Canxiong Lai   +7 more
doaj   +1 more source

Package Hermeticity Testing with Thermal Transient Measurements [PDF]

, 2008
The rapid incursion of new technologies such as MEMS and smart sensor device manufacturing requires new tailor-made packaging designs. In many applications these devices are exposed to humid environments.
Rencz, M., Vass-Varnai, Andras
core   +2 more sources

Reliability analysis and reliable operation of three-level ANPC inverter

Frontiers in Energy Research, 2023
The three-level active neutral-point-clamped (3L-ANPC) inverters have been widely used in medium-voltage high-power electrical drives. The purpose of this paper is to achieve the reliable operation for 3L-ANPC inverters by reliability analysis and ...
Xiaolin Zheng, Xiaoxiao Huang, Peiyu Chen, Zhiqiang Chong, Zhongchen Yuan   +4 more
doaj   +1 more source

Optimal edge termination for high oxide reliability aiming 10kV SiC n-IGBTs [PDF]

, 2019
The edge termination design strongly affects the ability of a power device to support the desired voltage and its reliable operation. In this paper we present three appropriate termination designs for 10kV n-IGBTs which achieve the desired blocking ...
,, ,, Antoniou, M, Arvanitopoulos, A, Gyftakis, KN, Lophitis, N, Perkins, S, Tiwari, AK, Trajkovic, T, Udrea, F   +9 more
core   +1 more source