Results 221 to 230 of about 119,011 (331)

Testing Method and Reliability Design of Reliability Estimation in Mounting Power Electronics Semiconductor

, 2002
Nagatoshi Okabe, Mitsuyoshi TSUTSUMI, Xia Zhu   +2 more
openalex   +2 more sources

Influence of design and coatings on the mechanical reliability of semiconductor wafers. [PDF]

, 2002
Karl J. Yoder
openalex   +1 more source

Molecular Cross‐Linking of MXenes: Tunable Interfaces and Chemiresistive Sensing

Advanced Functional Materials, EarlyView.
In this study, Ti3C2Tx MXenes are initially functionalized using oleylamine ligands to form stable dispersions in an organic solvent. Subsequently ligand exchange with α,ω‐diaminoalkanes enables cross‐linking, along with precise tuning of interfaces. This structural control translates into tunable charge transport and responsive VOC sensing, showing ...
Yudhajit Bhattacharjee, Lukas Mielke, Mahmoud Al‐Hussein, Shivam Singh, Karen Schaefer, Borja Rodriguez‐Barea, Qiong Li, Anik Kumar Ghosh, Artur Erbe, Carmen Herrmann, Yana Vaynzof, Andreas Fery, Hendrik Schlicke   +12 more
wiley   +1 more source

A hierarchical sub-modeling approach for the thermo-mechanical analysis of a TFT-FOPLP. [PDF]

Sci Prog
Cheng HC, Yu CF.
europepmc   +1 more source

Domain‐Wall‐Free Sliding Ferroelectricity in Fully Commensurate 3R Transition Metal Dichalcogenide Bilayers

Advanced Functional Materials, EarlyView.
It is reported that the ferroelectric switching behavior of rhombohedral (3R) phase transition metal dichalcogenide (TMD) bilayers strongly depends on their domain structures. Single‐domain TMDs (SD‐TMDs) with domain‐wall‐free structures exhibit robust and stable polarization switching, whereas poly‐domain TMDs (PD‐TMDs) with randomly distributed ...
Ji‐Hwan Baek, Seong Chul Hong, Jinwoo Kim, Hyeongseok Lee, Hyun Woo Jeong, Kenji Watanabe, Takashi Taniguchi, Min Hyuk Park, Gwan‐Hyoung Lee   +8 more
wiley   +1 more source

Advances in High-Voltage Power Electronics Using Ga₂O₃-Based HEMT: Modeling. [PDF]

Materials (Basel)
Alhasani R, Hussain H, Alkhamisah MA, Hiazaa A, Alharbi A.   +4 more
europepmc   +1 more source

Effects of Creep Failure Mechanisms on Thermomechanical Reliability of Solder Joints in Power Semiconductors

, 2020
Vahid Samavatian, Hossein Iman‐Eini, Yvan Avenas, Majid Samavatian   +3 more
openalex   +2 more sources

Universal Neuromorphic Element: NbOx Memristor with Co‐Existing Volatile, Non‐Volatile, and Threshold Switching

Advanced Functional Materials, EarlyView.
A W/NbOx/Pt memristor demonstrates the coexistence of volatile, non‐volatile, and threshold switching characteristics. Volatile switching serves as a reservoir computing layer, providing dynamic short‐term processing. Non‐volatile switching, stabilized through ISPVA, improves reliable long‐term readout. Threshold switching operates as a leaky integrate
Ungbin Byun, Hyesung Na, Sungjun Kim
wiley   +1 more source

Investigation of gate dielectric interface on contact resistance of short channel organic thin film transistors (OTFT). [PDF]

PLoS One
Prasanthi L, Panigrahy AK, Tata S, B RBJ, Rao TS, Prakash MD, Kundu SK.   +6 more
europepmc   +1 more source

A Van der Waals Optoelectronic Synapse with Tunable Positive and Negative Post‐Synaptic Current for Highly Accurate Spiking Neural Networks

Advanced Functional Materials, EarlyView.
A van der Waals optoelectronic synaptic device based on a ReS2/WSe2 heterostructure and oxygen‐treated h‐BN is presented, which enables both positive and negative PSCs through photocarrier polarity reversal. Bidirectional plasticity arises from gate‐tunable band bending and charge trapping‐induced quasi‐doping.
Hyejin Yoon, Soeun Park, Yeong Kwon Kim, Juhwan Baek, Ki Han Kim, Seongil Yun, Hyeonchang Son, Jeongeun Choi, Byung Chul Jang, Dong‐Ho Kang   +9 more
wiley   +1 more source