Results 231 to 240 of about 99,199 (301)

Charge Transport and Carrier Polarity Tuning by Electrolyte Gating in Nickel Benzenehexathiol Coordination Nanosheets

Advanced Materials, EarlyView.
This work reveals that charge transport in nickel benzenehexathiol coordination nanosheets is governed by variable‐range hopping reflecting structural disorder. Electrolyte gating induces a switch in dominant carrier polarity from p‐type to n‐type and leads to an improvement in thermoelectric performance.
Tian Wu, Xinglong Ren, Zhengkang Qu, Ian E. Jacobs, Lu Zhang, Naoya Fukui, Xin Chen, Hiroshi Nishihara, Henning Sirringhaus   +8 more
wiley   +1 more source

Harnessing Photo‐Energy Conversion in Nanomaterials for Precision Theranostics

Advanced Materials, EarlyView.
Harnessing photo‐energy conversion in nanomaterials enables precision theranostics through light‐driven mechanisms such as photoluminescence, photothermal, photoelectric, photoacoustic, photo‐triggered surface‐enhanced Raman scattering (SERS), and photodynamic processes. This review explores six fundamental principles of photo‐energy conversion, recent
Jingyu Shi, Yadi Fan, Qin Zhang, Yingying Huang, Mo Yang   +4 more
wiley   +1 more source

Designing the Next Generation of Biomaterials through Nanoengineering

Advanced Materials, EarlyView.
Nanoengineering enables precise control over biomaterial interactions with living systems by tuning surface energy, defects, porosity, and crystallinity. This review highlights how these nanoscale design parameters drive advances in regenerative medicine, drug delivery, bioprinting, biosensing, and bioimaging, while outlining key translational ...
Ryan Davis Jr., Ishaan Duggal, Nicholas A. Peppas, Akhilesh K. Gaharwar   +3 more
wiley   +1 more source

Ruddlesden–Popper Defects Act as a Free Surface: Role in Formation and Photophysical Properties of CsPbI3

Advanced Materials, EarlyView.
This work investigates Ruddlesden–Popper (RP) defects in vapor‐deposited CsPbI3 thin films using electron microscopy, density functional theory, and optoelectronic measurements. The atomic positions at the planar defect are found comparable to those of a free surface, revealing their role in phase stabilization.
Weilun Li, Qimu Yuan, Yinan Chen, Joshua R. S. Lilly, Marina R. Filip, Laura M. Herz, Michael B. Johnston, Joanne Etheridge   +7 more
wiley   +1 more source

Ultra‐High Sensitivity, Wide‐Range Thermometry Based on High‐Quality Microscale Diamond Resonators

Advanced Materials, EarlyView.
By combing high‐crystal quality single‐crystal diamond MEMS cantilevers with multi‐mode resonance, the groundbreaking microscale ultra‐high sensitivity ≈22 nK Hz⁻¹/2 and resolution of 100 µK thermometry is achieved. The diamond MEMS thermometry can operate over a wide temperature range from 6.5 to 380 K. This work underscores diamond MEMS resonators as
Wen Zhao, Guo Chen, Tokuyuki Teraji, Yasuo Koide, Masaya Toda, Meiyong Liao   +5 more
wiley   +1 more source

Reliability of semiconductor devices [PDF]

Physics in Technology, 1976
Report on Metallization systems for semiconductor devices, 13 February 1976 Imperial College, London.
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Improving the Reliability of Semiconductor Converters

Russian Electrical Engineering, 2020
This paper considers the opportunities for improving the reliability of power semiconductor converters by increasing the installed capacity margin and modifying the configuration of power circuit diagrams. As shown by regression analysis, the unit cost of an autonomous voltage inverter with an increase in the installed capacity of the frequency ...
M. A. Grigorev, A. M. Zhuravlev, M. E. Korzhavin   +2 more
openaire   +2 more sources

Reliability Of Semiconductor Injection Lasers

SPIE Proceedings, 1987
Semiconductor injection lasers are key components in fiber optic communication systems, therefore their reliability is a determining factor in the technical success of these systems. Lasers are subject to several specific degradation mechanisms some of which affect the bulk of the optically active volume of the device, some the mirror facets and some ...
Wolf, H. D., Mettler, K., Lengyel, G.
openaire   +3 more sources

Reliability of compound semiconductor devices

Microelectronics Reliability, 1992
Abstract This paper reviews the reliability of III–V semiconductor devices with particular attention to the failure mechanisms typical of these structures. Instability effects at the surface of various FETs have been examined and the problems related to the metallurgies employed.
FANTINI, Fausto, F. MAGISTRALI
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Semiconductor network reliability assessment [PDF]

Proceedings of the IEEE, 1964
The paper discusses the reliability test plan and test results on semiconductor network microelectronic devices. Included in the test plan are reliability programs, life testing, step stress testing, and environmental tests. The failure analysis-corrective action cycle is discussed at length.
J. Adams, W. Workman
openaire   +1 more source