Results 241 to 250 of about 120,829 (333)

Enhancing Synaptic Plasticity and Multistate Retention of Organic Neuromorphic Devices Using Anion‐Excessive Gel Electrolyte

Advanced Functional Materials, EarlyView.
Anion‐excessive gel‐based organic synaptic transistors (AEG‐OSTs) that can maintain electrical neutrality are developed to enhance synaptic plasticity and multistate retention. Key improvement is attributed to the maintenance of electrical neutrality in the electrolyte even after electrochemical doping, which reduces the Coulombic force acting on ...
Yousang Won, Jeongwoo Lee, Hyunwook Kim, Joon Hak Oh   +3 more
wiley   +1 more source

Investigation of Electrical Behavior of Au/Ti/AlN/Si Schottky Diode via Gaussian Distribution Barrier Modeling. [PDF]

ACS Omega
Karaca A, Yıldız DE, Tataroğlu A.
europepmc   +1 more source

Spectrally Tuned Floating‐Gate Synapse Based on Blue‐ and Red‐Absorbing Organic Molecules for Wavelength‐Selective Neural Networks and Fashion Image Classifications

Advanced Functional Materials, EarlyView.
The characteristics of a vertical floating gate heterostructure transistor device that exhibits neuromorphic potentiation under visible light illumination are investigated. Due to spectrally‐tuned absorbance properties of each thin film layer and introduction of tunneling dielectric, the device enables wavelength‐selective tuning of synaptic plasticity
Seungme Kang, Jisoo Park, Jinwoong Hong, Jinmin Park, Jeongbo Lee, Hyeonjung Kim, Wonjun Shin, Eva Bestelink, Radu A. Sporea, Seyong Oh, Chung Whan Lee, Yun‐Hi Kim, Hocheon Yoo   +12 more
wiley   +1 more source

Effects of Annealing Temperature Combinations in InO_x/AlO_x Heterostructure for High-Performance and Stable Solution-Processed Junctionless Transistors. [PDF]

Materials (Basel)
Park J, Gil D, Park SJ, Ahn JW, Choi M, Lang P, Jang J, Kim DK, Bae JH.   +8 more
europepmc   +1 more source

Three‐Dimensional Hierarchical Nanowire‐Networks with Deep‐Focus Tolerance and Adhesion Robustness for Harsh‐Environment SERS Sensing

Advanced Functional Materials, EarlyView.
A 3D nanowire‐network SERS substrate with robust adhesion is developed, featuring pronounced z‐direction optical activity, ultralow detection limit (1.5 × 10−13 M), and excellent signal uniformity (RSD < 10%). Enabled by enhanced light scattering, increased optical density of states, and structural reinforcement, the substrate demonstrates stable, high‐
Jinglai Duan, Wentao Wang, Xiu Liang, Yongliang Zhang, Jie Liu, Yu Bai, Dangyuan Lei   +6 more
wiley   +1 more source

Silicon Carbide Neural Interfaces: A Review of Progress Toward Monolithic Devices. [PDF]

Nanomaterials (Basel)
Frewin CL, Melton M, Bernardin E, Beygi M, Feng C, Saddow SE.   +5 more
europepmc   +1 more source

Near‐Infrared Light‐Programmable Negative Differential Transconductance in Organic Electrochemical Transistors for Reconfigurable Logic

Advanced Functional Materials, EarlyView.
Organic electrochemical transistors based on a Near‐Infrared (NIR)‐responsive polymer p(C4DPP‐T) and iodide electrolyte exhibit optically programmable negative differential transconductance. NIR illumination triggers an iodine‐mediated redox process, enabling a transition from binary to ternary conductance states within a single‐layer device.
Debdatta Panigrahi, Christina J. Kousseff, Aristea Pavlou, Zeinab Hamid, Iain McCulloch, Fabrizio Torricelli, Paul W. M. Blom, Paschalis Gkoupidenis   +7 more
wiley   +1 more source

Cu-Contamination-Free Hybrid Bonding via MoS₂ Passivation Layer. [PDF]

Nanomaterials (Basel)
Choi H, Kim K, Son S, Lee D, Je S, Kang J, Jeong S, Kim DS, Lee M, Kim J, Kim T.   +10 more
europepmc   +1 more source

Enhanced reliability and precision for internal laser processing of semiconductors using temporal domain strategies

Pol Sopeña, Andong Wang, Niladri Ganguly, Alexandros Mouskeftaras, David Grojo   +4 more
openalex   +2 more sources

Intermediate Resistive State in Wafer‐Scale Vertical MoS2 Memristors Through Lateral Silver Filament Growth for Artificial Synapse Applications

Advanced Functional Materials, EarlyView.
In MOCVD MoS2 memristors, a current compliance‐regulated Ag filament mechanism is revealed. The filament ruptures spontaneously during volatile switching, while subsequent growth proceeds vertically through the MoS2 layers and then laterally along the van der Waals gaps during nonvolatile switching.
Yuan Fa, Milan Buttberg, Ke Ran, Rana Walied Ahmad, Dennis Braun, Lukas Völkel, Jimin Lee, Sofía Cruces, Bart Macco, Bárbara Canto, Holger Lerch, Thorsten Wahlbrink, Holger Kalisch, Michael Heuken, Andrei Vescan, Joachim Mayer, Zhenxing Wang, Ilia Valov, Stephan Menzel, Max C. Lemme   +19 more
wiley   +1 more source