Results 41 to 50 of about 119,011 (331)

Multipulse current source offers low power losses and high reliability [PDF]

open access: yes, 1967
Pulse current source uses low loss, high reliability, LC circuits to provide the necessary high impedance for magnetic memory cores, frequently used in digital computational equipment.

core   +1 more source

In‐Situ Growth of 2D MOFs as a Molecular Sieving Layer on SnS2 Nanoflakes for Realizing Ultraselective H2S Detection

open access: yesAdvanced Functional Materials, Volume 35, Issue 12, March 18, 2025.
The ultraselective H2S detection of the ZIF‐L/SnS2 heterostructure is demonstrated. The introduction of 2‐dimensional (2D) breathable ZIF‐L results in a substantial increase in H2S selectivity attributable to the molecular sieving effect, which impedes the permeation of gases with large kinetic diameters and high polarity.
Soo Min Lee   +7 more
wiley   +1 more source

Improved DC and RF Characteristics of GaN HEMT Using a Back-Barrier and Locally Doped Barrier Layer

open access: yesMicromachines
To enhance the DC and RF performance of AlGaN/GaN HEMTs, a novel device structure was proposed and investigated through simulation. The key innovation of this new structure lies in the incorporation of an Al0.7In0.15Ga0.15N back-barrier layer and an N ...
Shuxiang Sun   +4 more
doaj   +1 more source

Development of reliability prediction technique for semiconductor diodes [PDF]

open access: yes, 1967
New fundamental technique of reliability prediction for semiconductor diodes based on realistic mathematical models can be applied to component failure rate prediction including mechanical degradation, electrical degradation, environmental stress factors,
Ryerson, C. M.
core   +1 more source

Harnessing Outer Space for Improved Electrocaloric Cooling

open access: yesAdvanced Functional Materials, EarlyView.
A novel radiative heat sink/source‐integrated electrocaloric (R‐iEC) system combines the electrocaloric (EC) effect with a thermally conductive radiative cooler (TCRC) to address heat dissipation limitations in EC devices. Utilizing outer space as a heat sink, the system achieves up to 240 W m−2 of heat dissipation performance, making it highly ...
Dong Hyun Seo   +8 more
wiley   +1 more source

In-situ-SiN/AlN/Al0.05Ga0.95N High Electron-Mobility Transistors on Si-Substrate Using Al2O3/SiO2 Passivation

open access: yesIEEE Journal of the Electron Devices Society, 2021
In this study, in-situ MOCVD-grown SiN/AlN/Al0.05Ga0.95N HEMTs were fabricated using ALD-Al2O3/PECVD-SiO2 passivation. A high on/off current ratio of 109 and a low subthreshold swing of 64 mV/dec are achieved. The interface traps in the SiN/AlN/Al0.05Ga0.
Weihang Zhang   +6 more
doaj   +1 more source

Influence of the spatial distribution of border traps in the capacitance frequency dispersion of Al2O3/InGaAs [PDF]

open access: yes, 2018
In this paper, the capacitance frequency dispersion in strong accumulation of capacitance voltage curves has been studied for different high-k dielectric layers in MOS stacks.
Aguirre, Fernando Leonel   +5 more
core   +1 more source

Unique Performance Considerations for Printable Organic Semiconductor and Perovskite Radiation Detectors: Toward Consensus on Best Practice Evaluation

open access: yesAdvanced Functional Materials, EarlyView.
A lack of standard approaches for testing and reporting the performance of metal halide perovskites and organic semiconductor radiation detectors has resulted in inconsistent interpretation of performance parameters, impeding progress in the field. This Perspective recommends key metrics and experimental details, which are suggested for reporting in ...
Jessie A. Posar   +8 more
wiley   +1 more source

Unbalanced currents effect on the thermal characteristic and reliability of parallel connected power switches

open access: yesCase Studies in Thermal Engineering, 2021
In many industrial applications, parallel connection of power semiconductor switches is widely used to achieve higher power levels and fault-tolerant operation.
Tohid Rahimi   +5 more
doaj   +1 more source

Organic Electrochemical Transistor Channel Materials: Copolymerization Versus Physical Mixing of Glycolated and Alkoxylated Polymers

open access: yesAdvanced Functional Materials, EarlyView.
This work discusses the use of blended channel materials in OECTs. It explores how mixing glycolated and alkoxylated polymers in various ratios offers a simpler and more efficient route to tuning OECT properties. The performance of the polymer blends is compared to the corresponding copolymers, demonstrating similar OECT characteristics, swelling ...
Lize Bynens   +14 more
wiley   +1 more source

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