Results 41 to 50 of about 2,142,347 (390)
Review of power semiconductor device reliability for power converters
The investigation shows that power semiconductor devices are the most fragile components of power electronic systems.Improving the reliability of power devices is the basis of a reliable power electronic system, and in recent years, many studies have ...
Bo Wang, Jie Cai, Xiong Du, Luowei Zhou
semanticscholar +1 more source
In this work, AlGaN double channel heterostructure is proposed and grown by metal organic chemical vapor deposition (MOCVD), and high-performance AlGaN double channel high electron mobility transistors (HEMTs) are fabricated and investigated.
Yachao Zhang+9 more
doaj +1 more source
Fabrication of photonic band-gap crystals [PDF]
We describe the fabrication of three-dimensional photonic crystals using a reproducible and reliable procedure consisting of electron beam lithography followed by a sequence of dry etching steps.
Cheng, C. C., Scherer, A.
core +1 more source
In semiconductor manufacturing, understanding how various materials behave and interact is critical to making a reliable and robust semiconductor package. Semiconductor Packaging: Materials Interaction and Reliability provides a fundamental understanding of the underlying physical properties of the materials used in a semiconductor package.
Chen, Andrea, Lo, Randy Hsiao-Yu
openaire +3 more sources
This article provides a review of semiconductor based ionising radiation sensors to measure accumulated dose and detect individual strikes of ionising particles. The measurement of ionising radiation (γ-ray, X-ray, high energy UV-ray and heavy ions, etc.)
Arijit Karmakar+4 more
semanticscholar +1 more source
The magnetic and optical properties studies in monolayer transition-metal dichalcogenides have attracted attention because of the manufacture spintronic, electronic and photonic devices.
Qi-Zhi Lang+6 more
doaj +1 more source
In this study, in-situ MOCVD-grown SiN/AlN/Al0.05Ga0.95N HEMTs were fabricated using ALD-Al2O3/PECVD-SiO2 passivation. A high on/off current ratio of 109 and a low subthreshold swing of 64 mV/dec are achieved. The interface traps in the SiN/AlN/Al0.05Ga0.
Weihang Zhang+6 more
doaj +1 more source
Design and development of a fast scan infrared detection and measurement instrument [PDF]
Infrared microscope instrument measures and plots the infrared profile of semiconductor chips, transistors and integrated circuits. Infrared analyses yields information on electrical and physical properties, enabling manufacturing improvements in ...
Dostoomian, A. S.+3 more
core +1 more source
Beyond Order: Perspectives on Leveraging Machine Learning for Disordered Materials
This article explores how machine learning (ML) revolutionizes the study and design of disordered materials by uncovering hidden patterns, predicting properties, and optimizing multiscale structures. It highlights key advancements, including generative models, graph neural networks, and hybrid ML‐physics methods, addressing challenges like data ...
Hamidreza Yazdani Sarvestani+4 more
wiley +1 more source
Cryogenic Hyperdimensional In-Memory Computing Using Ferroelectric TCAM
Cryogenic operations of electronics present a significant step forward to achieve huge demand of in-memory computing (IMC) for high-performance computing, quantum computing, and military applications.
Shivendra Singh Parihar+5 more
doaj +1 more source