Results 41 to 50 of about 119,011 (331)
Multipulse current source offers low power losses and high reliability [PDF]
Pulse current source uses low loss, high reliability, LC circuits to provide the necessary high impedance for magnetic memory cores, frequently used in digital computational equipment.
core +1 more source
The ultraselective H2S detection of the ZIF‐L/SnS2 heterostructure is demonstrated. The introduction of 2‐dimensional (2D) breathable ZIF‐L results in a substantial increase in H2S selectivity attributable to the molecular sieving effect, which impedes the permeation of gases with large kinetic diameters and high polarity.
Soo Min Lee +7 more
wiley +1 more source
Improved DC and RF Characteristics of GaN HEMT Using a Back-Barrier and Locally Doped Barrier Layer
To enhance the DC and RF performance of AlGaN/GaN HEMTs, a novel device structure was proposed and investigated through simulation. The key innovation of this new structure lies in the incorporation of an Al0.7In0.15Ga0.15N back-barrier layer and an N ...
Shuxiang Sun +4 more
doaj +1 more source
Development of reliability prediction technique for semiconductor diodes [PDF]
New fundamental technique of reliability prediction for semiconductor diodes based on realistic mathematical models can be applied to component failure rate prediction including mechanical degradation, electrical degradation, environmental stress factors,
Ryerson, C. M.
core +1 more source
Harnessing Outer Space for Improved Electrocaloric Cooling
A novel radiative heat sink/source‐integrated electrocaloric (R‐iEC) system combines the electrocaloric (EC) effect with a thermally conductive radiative cooler (TCRC) to address heat dissipation limitations in EC devices. Utilizing outer space as a heat sink, the system achieves up to 240 W m−2 of heat dissipation performance, making it highly ...
Dong Hyun Seo +8 more
wiley +1 more source
In this study, in-situ MOCVD-grown SiN/AlN/Al0.05Ga0.95N HEMTs were fabricated using ALD-Al2O3/PECVD-SiO2 passivation. A high on/off current ratio of 109 and a low subthreshold swing of 64 mV/dec are achieved. The interface traps in the SiN/AlN/Al0.05Ga0.
Weihang Zhang +6 more
doaj +1 more source
Influence of the spatial distribution of border traps in the capacitance frequency dispersion of Al2O3/InGaAs [PDF]
In this paper, the capacitance frequency dispersion in strong accumulation of capacitance voltage curves has been studied for different high-k dielectric layers in MOS stacks.
Aguirre, Fernando Leonel +5 more
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A lack of standard approaches for testing and reporting the performance of metal halide perovskites and organic semiconductor radiation detectors has resulted in inconsistent interpretation of performance parameters, impeding progress in the field. This Perspective recommends key metrics and experimental details, which are suggested for reporting in ...
Jessie A. Posar +8 more
wiley +1 more source
In many industrial applications, parallel connection of power semiconductor switches is widely used to achieve higher power levels and fault-tolerant operation.
Tohid Rahimi +5 more
doaj +1 more source
This work discusses the use of blended channel materials in OECTs. It explores how mixing glycolated and alkoxylated polymers in various ratios offers a simpler and more efficient route to tuning OECT properties. The performance of the polymer blends is compared to the corresponding copolymers, demonstrating similar OECT characteristics, swelling ...
Lize Bynens +14 more
wiley +1 more source

