Results 71 to 80 of about 99,199 (301)

Impact of Total Ionizing Dose on Radio Frequency Performance of 22 nm Fully Depleted Silicon-On-Insulator nMOSFETs

Micromachines
In this paper, the degradation mechanism of the RF performance of 22 nm fully depleted (FD) silicon-on-insulator nMOSFETs at different total ionizing dose levels has been investigated.
Zhanpeng Yan, Hongxia Liu, Menghao Huang, Shulong Wang, Shupeng Chen, Xilong Zhou, Junjie Huang, Chang Liu   +7 more
doaj   +1 more source

Gate‐Tunable Hole Transport in In‐Plane Ge Nanowires by V‐Groove Confined Selective Epitaxy

Advanced Functional Materials, EarlyView.
Ge nanowires are promising for hole spin‐based quantum processors, requiring direct integration onto Si wafers. This work introduces V‐groove‐confined selective epitaxy for in‐plane nanowire growth on Si. Structural and low‐temperature transport measurements confirm their high crystalline quality, gate‐tunable hole densities, and mobility.
Santhanu Panikar Ramanandan, Alban Morelle, Michele Masseroni, Shelly Ben‐David, Sara Martí‐Sánchez, Victor Boureau, Alok Rudra, Thomas Ihn, Jordi Arbiol, W. Craig Carter, Klaus Ensslin, Anna Fontcuberta i Morral   +11 more
wiley   +1 more source

Gate stability of GaN-Based HEMTs with P-Type Gate [PDF]

, 2016
status ...
Decoutere, S., Marcon, D., Meneghesso, Gaudenzio, Meneghini, Matteo, Posthuma, N., Rizzato, V., Rossetto, Isabella, Stoffels, S., Van Hove, M., Wu, T. L., Zanoni, Enrico   +10 more
core   +2 more sources

Efficient Inverted ITO-Free Organic Solar Cells Based on Transparent Silver Electrode with Aqueous Solution-Processed ZnO Interlayer

International Journal of Photoenergy, 2017
Efficient inverted organic solar cells (OSCs) with the MoO3 (2 nm)/Ag (12 nm) transparent cathode and an aqueous solution ZnO electron extraction layer processed at low temperature are investigated in this work.
Zhizhe Wang, Dazheng Chen, Chunfu Zhang, Zhenhua Lin, Yan Liu, Genquan Han, Jingjing Chang, Jincheng Zhang, Lixin Guo, Yue Hao   +9 more
doaj   +1 more source

Carbon Nanotube 3D Integrated Circuits: From Design to Applications

Advanced Functional Materials, EarlyView.
As Moore's law approaches its physical limits, carbon nanotube (CNT) 3D integrated circuits (ICs) emerge as a promising alternative due to the miniaturization, high mobility, and low power consumption. CNT 3D ICs in optoelectronics, memory, and monolithic ICs are reviewed while addressing challenges in fabrication, design, and integration.
Han‐Yang Liu, Yun Sun, Dong‐Ming Sun, Hui‐Ming Cheng   +3 more
wiley   +1 more source

Self‐Poled Halide Perovskite Ruddlesden‐Popper Ferroelectric‐Photovoltaic Semiconductor Thin Films and Their Energy Harvesting Properties

Advanced Functional Materials, EarlyView.
Low‐dimensional halide perovskite thin films, (BA)2(MA)n‐1PbnBr3n+1 (n = 1, 2), exhibit both semiconducting and ferroelectric properties, enabling mechanical and light energy harvesting. Using Cr/Cr₂O₃ or PCBM as barrier layers ensures reproducible ferroelectricity.
Raja Sekhar Muddam, Shaoyang Wang, Nirmal Prashanth Maria Joseph Raj, Qingping Wang, Philip Wijesinghe, Julia Payne, Matthew S. Dyer, Chris Bowen, Lethy Krishnan Jagadamma   +8 more
wiley   +1 more source

An Advanced Three-Level Active Neutral-Point-Clamped Converter With Improved Fault-Tolerant Capabilities [PDF]

, 2017
A resilient fault-tolerant silicon carbide (SiC) three-level power converter topology is introduced based on the traditional active neutral-point-clamped converter.
He, Jiangbiao, Katebi, Ramin, Weise, Nathan   +2 more
core   +1 more source

Improved hybrid circuit assembly yields and reliability by glassivation of the semiconductor chip [PDF]

, 1978
B. C. Heap, S. A. France
openalex   +2 more sources

Reliability Characteristics of Metal-Insulator-Semiconductor Capacitors with Low-Dielectric-Constant Materials [PDF]

, 2023
Yi-Lung Cheng, Wei-Fan Peng, Chi-Jia Huang, Giin-Shan Chen, Jau-Shiung Fang   +4 more
openalex   +1 more source

Turning on Selective H2S Gas Sensing Activity in Ternary Nickel Tungstate Strongly Correlated Electron System Through Sub‐Gap Band Manipulation

Advanced Functional Materials, EarlyView.
A strongly correlated electron system (SCES) exhibits pronounced insulating behavior due to Coulombic repulsion between cations, which generates a charge gap. This study investigates the tuning of the band structure in NiWO4‐based SCES via Cu doping at substitutional sites and Li doping at interstitial sites.
Seung Yong Lee, Ha Eun Choa, Seung Joon Choi, Chul Oh Park, Gi Hyun Park, June Won Suh, Si Hoon Jeong, Yunseong Ji, Changhyun Jin, Jeong Yun Hwang, Inseo Kim, Jihye Park, Joonho Bang, Myung Sik Choi, Hyo‐Jick Choi, Dong Won Chun, Kimoon Lee, Wooyoung Lee, Kyu Hyoung Lee   +18 more
wiley   +1 more source