Results 71 to 80 of about 190,755 (383)

High Purity Germanium Based Radiation Detectors with Segmented Amorphous Semiconductor Electrical Contacts: Fabrication Procedures [PDF]

arXiv, 2020
Radiation detectors constructed from large volume high purity Ge (HPGe) single crystals are widely used for gamma-ray spectroscopy. The detectors for this application can be simple in that they need only have two electrical contacts for voltage application and signal readout.
arxiv  

Concurrent Interface Passivation and Contact Work Function Tuning in Organic Self‐Aligned Gate Transistors and Complementary Circuits Using Phosphonic Acid Self‐Assembled Monolayers

Advanced Functional Materials, EarlyView.
Self‐aligned gate transistors are developed with a single‐step dielectric passivation and fine‐tuning of source/drain electrode work function using phosphonic acid self‐assembled monolayers (SAM). This transistor architecture minimizes overlap capacitances and access resistance.
Linqu Luo, Mohamad Insan Nugraha, Hendrik Faber, Shaoxian Li, Chrysa Aivalioti, Bahaaeddin Irziqat, Ricardo Ruvalcaba, Temur Maksudov, Yu‐ying Yang, Harold F. MazoMantilla, Lazaros Panagiotidis, Mohamed Nejib Hedhili, Furkan H. Isikgor, Leonidas Tsetseris, Shadi Fatayer, Martin Heeney, Thomas D. Anthopoulos   +16 more
wiley   +1 more source

Band offsets of semiconductor heterostructures: a hybrid density functional study [PDF]

, 2010
We demonstrate the accuracy of the hybrid functional HSE06 for computing band offsets of semiconductor alloy heterostructures. The highlight of this study is the computation of conduction band offsets with a reliability that has eluded standard density functional theory.
arxiv   +1 more source

Ultra‐Fast Non‐Volatile Resistive Switching Devices with Over 512 Distinct and Stable Levels for Memory and Neuromorphic Computing

Advanced Functional Materials, EarlyView.
A materials and device design concept that comprises a self‐assembled ultra‐thin epitaxial ion‐transporting layer, an amorphous oxide overcoat oxygen‐blocking layer, and a partial filament formed during an electroforming step is proposed for low‐current multilevel resistive switching devices.
Ming Xiao, Markus Hellenbrand, Nives Strkalj, Babak Bakhit, Zhuotong Sun, Nikolaos Barmpatsalos, Dovydas Joksas, Hongyi Dou, Zedong Hu, Ping Lu, Samip Karki, Sundar Kunwar, Jonathan D. Major, Aiping Chen, Haiyan Wang, Quanxi Jia, Adnan Mehonic, Judith L. MacManus‐Driscoll   +17 more
wiley   +1 more source

A new generation of high-power semiconductor devices [PDF]

Tehnika, 2014
Due to the constant development of technology and production, silicon semiconductor electronic components reach performance approaching the theoretical characteristics of the material.
Drndarević Vujo R.
doaj   +1 more source

Simulation Based Study of Safety Stocks under Short-Term Demand Volatility in Integrated Device Manufacturing. [PDF]

, 2018
© IEOM Society InternationalA problem faced by integrated device manufacturers (IDMs) relates to fluctuating demand and can be reflected in long-term demand, middle-term demand, and short-term demand fluctuations.
Alcalde Fernández, Oliver, Sunmola, Funlade   +1 more
core  

Selective Reduction Laser Sintering: A New Strategy for NO2 Gas Detection Based on In2O3 Nanoparticles

Advanced Functional Materials, EarlyView.
This research utilizes selective reduction laser sintering (SRLS) to engineer In2O3 NPs for flexible NO2 sensors. The introduction of oxygen vacancy defects enhances sensor performance, offering excellent responsiveness, rapid response/recovery, superior selectivity, low detection limit, and long‐term stability.
Shaogang Wang, Chunjian Tan, Qihang Zong, Shizhen Li, Chenshan Gao, Huiru Yang, Qianming Huang, Paddy French, Huaiyu Ye   +8 more
wiley   +1 more source

Highly Responsive Gate-Controlled p-GaN/AlGaN/GaN Ultraviolet Photodetectors with a High-Transmittance Indium Tin Oxide Gate

Micromachines
This work presents highly responsive gate-controlled p-GaN/AlGaN/GaN ultraviolet photodetectors (UVPDs) on Si substrates with a high-transmittance ITO gate.
Zhanfei Han, Xiangdong Li, Hongyue Wang, Yuebo Liu, Weitao Yang, Zesheng Lv, Meng Wang, Shuzhen You, Jincheng Zhang, Yue Hao   +9 more
doaj   +1 more source

Simple model for efficient search of high-mobility organic semiconductors [PDF]

arXiv, 2019
High charge mobility in active layers of organic electronic devices is often necessary for their efficient operation. As a result, search for high-mobility materials among the plethora of synthesizable organic semiconductors is of paramount importance for organic electronics.
arxiv  

Dielectric relaxation and Charge trapping characteristics study in Germanium based MOS devices with HfO2 /Dy2O3 gate stacks

, 2011
In the present work we investigate the dielectric relaxation effects and charge trapping characteristics of HfO2 /Dy2O3 gate stacks grown on Ge substrates.
Evangelou, E . K., Rahman, M. Shahinur
core   +1 more source