Results 71 to 80 of about 180,788 (231)
Simulation Based Study of Safety Stocks under Short-Term Demand Volatility in Integrated Device Manufacturing. [PDF]
, 2018 © IEOM Society InternationalA problem faced by integrated device manufacturers (IDMs) relates to fluctuating demand and can be reflected in long-term demand, middle-term demand, and short-term demand fluctuations.
Alcalde Fernández, Oliver +1 more
core
Exploiting Semiconductor Properties for Hardware Trojans [PDF]
arXiv, 2009 This paper discusses the possible introduction of hidden reliability defects during CMOS foundry fabrication processes that may lead to accelerated wearout of the devices. These hidden defects or hardware Trojans can be created by deviation from foundry design rules and processing parameters.
arxiv
International Journal of Photoenergy, 2017 Efficient inverted organic solar cells (OSCs) with the MoO3 (2 nm)/Ag (12 nm) transparent cathode and an aqueous solution ZnO electron extraction layer processed at low temperature are investigated in this work.
Zhizhe Wang +9 more
doaj +1 more source
Ground state determination and band gaps of bilayers of graphenylenes and octafunctionalized-biphenylenes [PDF]
, 2019 Device fabrication often requires materials that are either reliably conducting, reliably semiconducting, or reliably nonconducting. Bilayer graphene (BLG) changes from a superconductor to a semiconductor depending on it's stacking, but because it is difficult to control its stacking, it is not a reliable material for device fabrication.
arxiv +1 more source
Technological sustainable materials and enabling in semiconductor memory industry: A review
e-Prime: Advances in Electrical Engineering, Electronics and Energy, 2023 This paper provides an overview of current and future deployment of recyclable direct materials and sustainable materials through recycling of interconnect metals used in semiconductor assembly and packaging. Also, with the aim to study the key technical
Chong Leong Gan +4 more
doaj
, 2011 In the present work we investigate the dielectric relaxation effects and charge trapping characteristics of HfO2 /Dy2O3 gate stacks grown on Ge substrates.
Evangelou, E . K., Rahman, M. Shahinur
core +1 more source
Research methods of reliability indicators of rectifier diode in tablet execution
EPJ Web of Conferences, 2015 A new forecast approach for the reliability of power semiconductor devices in cyclic operation on the basis of numerical analysis of nonuniform temperature fields is offered.
Rinat Kurmangaliev, Evgeny Kravchenko
doaj +1 more source
Increase resource power electronics module on the physics of failure method
MATEC Web of Conferences, 2014 A new approach to improving resource devices for power electronics. The numerical analysis of non-uniform temperature field of power semiconductor devices. A comparison of the intensities of the failure of a power unit with the real thermal regime of the
Kravchenko Evgeny V., Kuznetsov Geniy V.
doaj +1 more source
Spectroscopic assessment of charge mobility in organic semiconductors [PDF]
arXiv, 2019 Rapid progress in organic electronics demands new highly efficient organic semiconducting materials. Nevertheless, only few materials have been created so far that show reliable band-like transport with high charge mobilities, which reflects the two main obstacles in the field: the poor understanding of charge transport in organic semiconductors (OSs ...
arxiv
Colossal electroresistance in metal/ferroelectric/semiconductor tunnel diodes for resistive switching memories [PDF]
, 2012 We propose a tunneling heterostructure by replacing one of the metal electrodes in a metal/ferroelectric/metal ferroelectric tunnel junction with a heavily doped semiconductor. In this metal/ferroelectric/semiconductor tunnel diode, both the height and the width of the tunneling barrier can be electrically modulated due to the ferroelectric field ...
arxiv +1 more source