Results 71 to 80 of about 2,332,362 (329)

Improvement of radiation hardness for a novel InP-based HEMT with graded In1-xGaxAs channel layer and double Si-doped structure

Results in Engineering
To enhance the radiation resistance of the InP-based HEMT, a novel structure incorporating a graded In1-xGaxAs channel layer and double Si-doped structure (DPLC-HEMT) is proposed.
Shuxiang Sun, Xintong Xie, Hongying Mei, Xiaorong Luo, J. Ajayan   +4 more
doaj   +1 more source

Efficient Inverted ITO-Free Organic Solar Cells Based on Transparent Silver Electrode with Aqueous Solution-Processed ZnO Interlayer

International Journal of Photoenergy, 2017
Efficient inverted organic solar cells (OSCs) with the MoO3 (2 nm)/Ag (12 nm) transparent cathode and an aqueous solution ZnO electron extraction layer processed at low temperature are investigated in this work.
Zhizhe Wang, Dazheng Chen, Chunfu Zhang, Zhenhua Lin, Yan Liu, Genquan Han, Jingjing Chang, Jincheng Zhang, Lixin Guo, Yue Hao   +9 more
doaj   +1 more source

Three‐dimensional Antimony Sulfide Based Flat Optics

Advanced Functional Materials, EarlyView.
This work presents the development of a grayscale electron beam lithography (g‐EBL) method for fabricating antimony trisulfide (Sb2S3) nanostructures with customizable 3D profiles. The refractive index of g‐EBL patterned Sb2S3 is determined based on the synergy of genetic algorithm and transfer matrix method.
Wei Wang, Uwe Hübner, Anne Gärtner, Tao Chen, Joseph Köbel, Franka Jahn, Daniel Repp, Abhrodeep Dey, Henrik Schneidwind, Andrea Dellith, Jan Dellith, Torsten Wieduwilt, Matthias Zeisberger, Tanveer Ahmed Shaik, Astrid Bingel, Markus A. Schmidt, Jer‐Shing Huang, Ulf Peschel, Volker Deckert   +18 more
wiley   +1 more source

High‐Temperature and High‐Electron Mobility Metal‐Oxide‐Semiconductor Field‐Effect Transistors Based on N‐Type Diamond

Advancement of science
Diamond holds the highest figure‐of‐merits among all the known semiconductors for next‐generation electronic devices far beyond the performance of conventional semiconductor silicon.
M. Liao, Huanying Sun, Satoshi Koizumi
semanticscholar   +1 more source

Spectrally Tunable 2D Material‐Based Infrared Photodetectors for Intelligent Optoelectronics

Advanced Functional Materials, EarlyView.
Intelligent optoelectronics through spectral engineering of 2D material‐based infrared photodetectors. Abstract The evolution of intelligent optoelectronic systems is driven by artificial intelligence (AI). However, their practical realization hinges on the ability to dynamically capture and process optical signals across a broad infrared (IR) spectrum.
Junheon Ha, Yingshan Ma, Yong Nam An, Sung‐Un An, Hyeon Hak Jung, Suvi‐Tuuli Varjamo, Jiwon Yoo, Junho Min, Hanvit Kim, Faisal Ahmed, Sang Hoon Chae, Young Min Song, Weiwei Cai, Tawfique Hasan, Zhipei Sun, Dong‐Ho Kang, Hyeon‐Jin Shin, Yunyun Dai, Hoon Hahn Yoon   +18 more
wiley   +1 more source

Reliability and Durability Enhancement of Large-area Mullite-cordierite Composite Substrates for Semiconductor Probe Card [PDF]

, 2021
Da-Eun Hyun, Jwa‐Bin Jeon, Yeon-Ji Choi, Yeon-Sook Lee, Yong-Nam Kim, Minkyung Kim, Seunghoon Ko, Sang‐Mo Koo, Weon Ho Shin, Chulhwan Park, Dong‐Won Lee, Jong‐Min Oh   +11 more
openalex   +1 more source

Smarter Sensors Through Machine Learning: Historical Insights and Emerging Trends across Sensor Technologies

Advanced Functional Materials, EarlyView.
This review highlights how machine learning (ML) algorithms are employed to enhance sensor performance, focusing on gas and physical sensors such as haptic and strain devices. By addressing current bottlenecks and enabling simultaneous improvement of multiple metrics, these approaches pave the way toward next‐generation, real‐world sensor applications.
Kichul Lee, Osman Gul, Yeongjae Kwon, Jaeseok Jeong, Seokjoo Cho, Jihyeon Ahn, Jehee Yu, Cheolmin Kim, Donho Lee, Hyeonseok Han, Byeongju Lee, Jungrak Choi, Ji‐Hwan Ha, Yongrok Jeong, Kyungnam Kang, Ali Javey, Junseong Ahn, Inkyu Park   +17 more
wiley   +1 more source

Spatiotemporal Plasma–Mediated Laser Fabrication of Ultrahigh‐Aspect‐Ratio Nanochannel Arrays for Vertical Perovskite Nanowire Semiconductor Devices

Advanced Functional Materials, EarlyView.
A spatiotemporal plasma–mediated laser processing approach is developed to fabricate ultrahigh–aspect ratio nanochannel arrays and corresponding perovskite nanowire arrays within transparent materials for optoelectronics devices. The laser‐fabricated nanochannels serve as templates for controlled perovskite infiltration and crystallization, enabling ...
Taijin Wang, Lingfeng Wang, Feng Liu, Gary J. Cheng   +3 more
wiley   +1 more source

Fabrication of Large-Area Mullite–Cordierite Composite Substrates for Semiconductor Probe Cards and Enhancement of Their Reliability [PDF]

, 2022
Da-Eun Hyun, Jwa‐Bin Jeon, Yeon-Sook Lee, Yong-Nam Kim, Minkyung Kim, Seunghoon Ko, Sang‐Mo Koo, Weon Ho Shin, Chulhwan Park, Dong‐Won Lee, Jong‐Min Oh   +10 more
openalex   +1 more source

Exciton Binding Energy Modulation in 2D Perovskites: A Phenomenological Keldysh Framework

Advanced Functional Materials, EarlyView.
The intrinsic screening effects are successfully decoupled from structural distortion by rigorously designing a series of 2D perovskites. This enabled us to demonstrate how the dielectric environment modulates the quasiparticle bandgap and exciton binding energy.
Kitae Kim, Namhee Kwon, Sang Woo Park, Wonsik Kim, Seunghwan Kim, Eunki Yoon, Aelim Ha, Donggyu Lee, Young Yong Kim, Jong‐Cheol Lee, Sungho Lee, Junghan Lee, Kyu Hyoung Lee, Yeonjin Yi, Ki‐Ha Hong, Soohyung Park   +15 more
wiley   +1 more source