Update Disturbance‐Resilient Analog ReRAM Crossbar Arrays for In‐Memory Deep Learning Accelerators [PDF]
Resistive memory (ReRAM) technologies with crossbar array architectures hold significant potential for analog AI accelerator hardware, enabling both in‐memory inference and training.
Wooseok Choi +16 more
doaj +3 more sources
EnTiered-ReRAM: An Enhanced Low Latency and Energy Efficient TLC Crossbar ReRAM Architecture [PDF]
Resistive Random Access Memory (ReRAM) is promising to be employed as high density storage-class memory due to its crossbar array and Triple-Level Cell (TLC) structures.
Yang Zhang +4 more
doaj +2 more sources
TRNGs from Pre-Formed ReRAM Arrays [PDF]
Schemes generating cryptographic keys from arrays of pre-formed Resistive Random Access (ReRAM) cells, called memristors, can also be used for the design of fast true random number generators (TRNG’s) of exceptional quality, while consuming low levels of
Bertrand Cambou +5 more
doaj +2 more sources
TCAD Simulation of Resistive Switching Devices: Impact of ReRAM Configuration on Neuromorphic Computing [PDF]
This paper presents a method for modeling ReRAM in TCAD and validating its accuracy for neuromorphic systems. The data obtained from TCAD are used to analyze the accuracy of the neuromorphic system.
Seonggyeom Kim, Jonghwan Lee
doaj +2 more sources
The Role of Hydrogen in ReRAM. [PDF]
AbstractPrevious research on transistor gate oxides reveals a clear link between hydrogen content and oxide breakdown. This has implications for redox‐based resistive random access memory (ReRAM) devices, which exploit soft, reversible, dielectric breakdown, as hydrogen is often not considered in modeling or measured experimentally.
Cox HRJ +12 more
europepmc +4 more sources
Medium-Temperature-Oxidized GeO x Resistive-Switching Random-Access Memory and Its Applicability in Processing-in-Memory Computing [PDF]
Processing-in-memory (PIM) is emerging as a new computing paradigm to replace the existing von Neumann computer architecture for data-intensive processing. For the higher end-user mobility, low-power operation capability is more increasingly required and
Kannan Udaya Mohanan +2 more
doaj +2 more sources
Exploring resistive switching in flexible, forming-free Ti/NiO/AZO/PET memory device for future wearable electronics [PDF]
Resistive Random Access Memory (ReRAM) is an emerging class of non-volatile memory that stores data by altering the resistance of a material within a memory cell.
Adiba Adiba +2 more
doaj +2 more sources
GraphR: Accelerating Graph Processing Using ReRAM [PDF]
This paper presents GRAPHR, the first ReRAM-based graph processing accelerator. GRAPHR follows the principle of near-data processing and explores the opportunity of performing massive parallel analog operations with low hardware and energy cost.
Chen, Yiran +4 more
core +2 more sources
NeoHebbian synapses to accelerate online training of neuromorphic hardware [PDF]
Neuromorphic systems that employ advanced synaptic learning rules, such as the three-factor learning rule, require synaptic devices of increased complexity.
S. Pande +6 more
doaj +2 more sources
A keyword-based approach to analyzing scientific research trends: ReRAM present and future [PDF]
Research trend analysis is a primary step in defining research structures and predicting research directions from scientific papers. Recently, due to millions of annual scientific publications, researchers demand analytical methods to interpret the ...
Hyeon Kim +5 more
doaj +2 more sources

