Results 91 to 100 of about 9,376 (179)

Single-Event Effect Performance of a Commercial ReRAM [PDF]

open access: yes
We show heavy ion test results of a commercial production-level ReRAM. The memory array is robust to bit upsets.
Buchner, Stephen   +7 more
core   +1 more source

Resistive Random Access Memory (ReRAM)

open access: yesInternational Journal of Research and Engineering, 2019
Resistive Random-Access Memory (ReRAM) technology has been viewed as one of the most reliable non-volatile memories that have are emerging in markets. In this research paper, the revolution of ReRAM will be analyzed. Also, the paper will also review the recent progress in the technological development of ReRAM.
openaire   +1 more source

Corrosion Hammer: a self-activated bit-flip attack to the processing-in-memory accelerator

open access: yesCybersecurity
The Resistive Random-Access-Memory (ReRAM) crossbar-based Processing-In-Memory (PIM) accelerator shows great promise in accelerating neural networks (NNs).
Zihao Yang   +6 more
doaj   +1 more source

Direct observation of electronic structure change by resistance random access memory effect in amorphous alumina

open access: yesAIP Advances, 2019
We measured X-ray absorption spectra of amorphous alumina with vacancy-type oxygen defects (AlOx) which exhibits the resistance random access memory (ReRAM) effect. We were able to detect changes in the electronic structure owing to the ReRAM effect.
Masato Kubota   +3 more
doaj   +1 more source

Nano-Graphitic based Non-Volatile Memories Fabricated by the Dynamic Spray-Gun Deposition Method

open access: yesMicromachines, 2019
This paper deals with the fabrication of Resistive Random Access Memory (ReRAM) based on oxidized carbon nanofibers (CNFs). Stable suspensions of oxidized CNFs have been prepared in water and sprayed on an appropriate substrate, using the dynamic spray ...
Paolo Bondavalli   +5 more
doaj   +1 more source

Insulator Metal Transition-Based Selector in Crossbar Memory Arrays

open access: yesElectronic Materials
This article investigates resistive random access memory (ReRAM) crossbar memory arrays, which is a notable development in non-volatile memory technology.
Mahmoud Darwish, László Pohl
doaj   +1 more source

CMOS‐Compatible HfOx‐Based Radiation Hardening Component for Neuromorphic Computing Applications

open access: yesAdvanced Electronic Materials
HfOx‐based resistive random‐access‐memory (ReRAM) devices (TiN/Ti/HfOx/RuOx/TiN) are fabricated by CMOS‐compatible materials (ruthenium (Ru)) and lithography‐lite process, potentially enabling a maskless, etching‐free process that can be implemented in ...
Yao‐Feng Chang   +3 more
doaj   +1 more source

Flexible and lead-free halide perovskite ReRAM: Toward sustainable and adaptive memory devices

open access: yesMaterials Today Sustainability
Halide perovskite-based resistive random-access memory (ReRAM), a next-generation non-volatile memory option, has attracted a lot of attention due to the search for environmentally friendly and adaptive electronics.
Geon Kim, Hyojung Kim
doaj   +1 more source

True Random Number Generator Implemented in ReRAM Crossbar Based on Static Stochasticity of ReRAMs

open access: yes2023 IEEE Asia Pacific Conference on Circuits and Systems (APCCAS), 2023
Tanay Patni, Abhijit Pethe
openaire   +1 more source

Electrochemical metallization ReRAMs (ECM) - Experiments and modelling: general discussion [PDF]

open access: yesFaraday Discussions, 2019
Ambrosi, Elia   +38 more
openaire   +3 more sources

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