Results 91 to 100 of about 9,376 (179)
Single-Event Effect Performance of a Commercial ReRAM [PDF]
We show heavy ion test results of a commercial production-level ReRAM. The memory array is robust to bit upsets.
Buchner, Stephen +7 more
core +1 more source
Resistive Random Access Memory (ReRAM)
Resistive Random-Access Memory (ReRAM) technology has been viewed as one of the most reliable non-volatile memories that have are emerging in markets. In this research paper, the revolution of ReRAM will be analyzed. Also, the paper will also review the recent progress in the technological development of ReRAM.
openaire +1 more source
Corrosion Hammer: a self-activated bit-flip attack to the processing-in-memory accelerator
The Resistive Random-Access-Memory (ReRAM) crossbar-based Processing-In-Memory (PIM) accelerator shows great promise in accelerating neural networks (NNs).
Zihao Yang +6 more
doaj +1 more source
We measured X-ray absorption spectra of amorphous alumina with vacancy-type oxygen defects (AlOx) which exhibits the resistance random access memory (ReRAM) effect. We were able to detect changes in the electronic structure owing to the ReRAM effect.
Masato Kubota +3 more
doaj +1 more source
Nano-Graphitic based Non-Volatile Memories Fabricated by the Dynamic Spray-Gun Deposition Method
This paper deals with the fabrication of Resistive Random Access Memory (ReRAM) based on oxidized carbon nanofibers (CNFs). Stable suspensions of oxidized CNFs have been prepared in water and sprayed on an appropriate substrate, using the dynamic spray ...
Paolo Bondavalli +5 more
doaj +1 more source
Insulator Metal Transition-Based Selector in Crossbar Memory Arrays
This article investigates resistive random access memory (ReRAM) crossbar memory arrays, which is a notable development in non-volatile memory technology.
Mahmoud Darwish, László Pohl
doaj +1 more source
CMOS‐Compatible HfOx‐Based Radiation Hardening Component for Neuromorphic Computing Applications
HfOx‐based resistive random‐access‐memory (ReRAM) devices (TiN/Ti/HfOx/RuOx/TiN) are fabricated by CMOS‐compatible materials (ruthenium (Ru)) and lithography‐lite process, potentially enabling a maskless, etching‐free process that can be implemented in ...
Yao‐Feng Chang +3 more
doaj +1 more source
Flexible and lead-free halide perovskite ReRAM: Toward sustainable and adaptive memory devices
Halide perovskite-based resistive random-access memory (ReRAM), a next-generation non-volatile memory option, has attracted a lot of attention due to the search for environmentally friendly and adaptive electronics.
Geon Kim, Hyojung Kim
doaj +1 more source
True Random Number Generator Implemented in ReRAM Crossbar Based on Static Stochasticity of ReRAMs
Tanay Patni, Abhijit Pethe
openaire +1 more source
Electrochemical metallization ReRAMs (ECM) - Experiments and modelling: general discussion [PDF]
Ambrosi, Elia +38 more
openaire +3 more sources

