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WEEBIT ReRAM IP Fully Qualified
New Electronics, 2023WEEBIT NANO’S RERAM IP FULLY QUALIFIED IN SKYWATER TECHNOLOGY’S S130 PROCESS
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Three dimensional integration of ReRAMs
2018 IEEE 18th International Conference on Nanotechnology (IEEE-NANO), 2018Storage-class memory, non-volatile, ultra-dense and lightning fast, may enable memory-driven computing to revolutionize the current architectures leading to an on-chip processing of vast amount of data. 3D vertical resistive random access memory (ReRAM) is a hot candidate for storage-class memory.
Boris Hudec +4 more
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Power-efficient ReRAM-aware CNN model generation
Integration, 2018Abstract This is the first work to propose a co-design approach for generation of the network model of a convolutional neural network (CNN) and its implementation using the ReRAM technology to achieve power efficiency. State-of-the-art in this area is based on implementation of an already fixed CNN model.
Maedeh Hemmat, Azadeh Davoodi
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Transition Metal Binary Oxides for ReRAM Applications
ECS Meeting Abstracts, 2009Abstract not Available.
S Spiga +5 more
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Reram Technologies: Applications and Outlook
2017 IEEE International Memory Workshop (IMW), 2017We commercialized ReRAM embedded MCU in 2013 using 0.18μm process. And we have achieved 1.2M endurance at 512KB ReRAM. To realize highly reliable ReRAM, the optimization of conductive filament (CF) characteristics is important. For the optimization, we developed a methodology for quantitating the CF characteristics.
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ЭНЕРГОНЕЗАВИСИМАЯ ПАМЯТЬ RERAM НОВОГО ПОКОЛЕНИЯ
NANOINDUSTRY Russia, 2020Статья посвящена технологии энергонезависимой резистивной памяти, поставленной в компании «Крокус Наноэлектроника», ее свойствам, первым изделиям и будущим продуктам на ее основе.
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ReRAM: History, Status, and Future
IEEE Transactions on Electron Devices, 2020This article reviews the resistive random-access memory (ReRAM) technology initialization back in the 1960s and its heavily focused research and development from the early 2000s. This review goes through various oxygen/oxygen vacancy and metal-ion-based ReRAM devices and their operation mechanisms. This review also benchmarks the performance of various
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Learning the sparsity for ReRAM
Proceedings of the 24th Asia and South Pacific Design Automation Conference, 2019With the in-memory processing ability, ReRAM based computing gets more and more attractive for accelerating neural networks (NNs). However, most ReRAM based accelerators cannot support efficient mapping for sparse NN, and we need to map the whole dense matrix onto ReRAM crossbar array to achieve O(1) computation complexity.
Jilan Lin +3 more
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Selector devices for cross-point ReRAM
2012 13th International Workshop on Cellular Nanoscale Networks and their Applications, 2012Both varistor-type bidirectional selector (VBS) and ultrathin NbO 2 device with threshold switching (TS) characteristics were investigated. A highly non-linear VBS showed superior performances including high current density (>3×107A/cm2) and high selectivity (∼104).
Seonghyun Kim +2 more
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Switching and reliability mechanisms for ReRAM
IEEE International Interconnect Technology Conference, 2014Taking advantage of electron hopping between oxygen vacancies in filaments, ReRAM switching is caused by oxygen vacancy migration. We have developed an oxygen diffusion retention model, based on this switching mechanism, for both typical bits and outlier bits.
Zhiqiang Wei +5 more
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