Results 41 to 50 of about 9,355 (180)
A Data-Driven Verilog-A ReRAM Model [PDF]
IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems, 2018 The translation of emerging application concepts that exploit resistive random access memory (ReRAM) into large-scale practical systems requires realistic yet computationally efficient device models. Here, we present a ReRAM model, where device current–voltage characteristics and resistive switching rate are expressed as a function of: 1) bias voltage ...
Ioannis Messaris +5 more
openaire +3 more sources
Effect of Programming Schemes on Short-Term Instability in 1T1R Configuration
IEEE AccessShort-term instability is one of the key challenges for redox-based resistive random-access memory (ReRAM) reaching practical applications in the field of neuromorphic computing.
Xiaohua Liu +7 more
doaj +1 more source
Purely electronic nanometallic ReRAM
, 2018 Resistance switching random access memory (ReRAM), with the ability to repeatedly modulate electrical resistance, has been highlighted as a feasible high-density memory with the potential to replace negative-AND (NAND) flash memory. Such resistance modulation usually involves ion migration and filament formation, which usually lead to relatively low ...
Lu, Yang +3 more
openaire +2 more sources
In Situ Study of Resistive Switching in a Nitride‐Based Memristive Device
Advanced Functional Materials, EarlyView.In situ TEM biasing experiment demonstrates the volatile I‐V characteristic of MIM lamella device. In situ STEM‐EELS Ti L2/L3 ratio maps provide direct evidence of the oxygen vacancies migrations under positive/negative electrical bias, which is critical for revealing the RS mechanism for the MIM lamella device.
Di Zhang +19 more
wiley +1 more source
Matrix cracking in polymeric composites laminates: Modelling and experiments [PDF]
, 2007 Composites ability to retain functionality in the presence of damage is a crucial safety and economic issue. Generally the first damage mode in composite laminates is matrix cracking, which affects the mechanical properties of the structure long before ...
Galiotis, C. +3 more
core +4 more sources
Advanced Functional Materials, EarlyView.Molecularly engineered memristors integrating Ag nanoparticle–embedded synthetic DNA with quasi‐2D halide perovskites enable ultra‐low‐operational voltage, forming‐free resistive switching, and record‐low power density. This synergistic integration of customized DNA and 2D OHP in bio‐hybrid architecture enhances charge transport, reduces variability ...
Kavya S. Keremane +9 more
wiley +1 more source
Determining the Electrical Charging Speed Limit of ReRAM Devices
IEEE Journal of the Electron Devices Society, 2021 Redox-based random-access memory (ReRAM) has the potential to successfully address the technological barriers that today’s memory technologies face. One of its promising features is its fast switching speed down to 50 ps.
M. von Witzleben +4 more
doaj +1 more source
, 2018 Controlled bipolar resistive switching (BRS) has been observed in nanostructured CoFe2O4 films using Al(aluminum)/CoFe2O4/FTO(fluorine-doped tin oxide) device. The fabricated device shows electroforming-free uniform BRS with two clearly distinguished and
Khare, Neeraj, Munjal, Sandeep
core +1 more source
Intrinsic resistance switching in amorphous silicon oxide for high performance SiOx ReRAM devices [PDF]
, 2017 In this paper, we present a study of intrinsic bipolar resistance switching in metal-oxide-metal silicon oxide ReRAM devices. Devices exhibit low electroforming voltages (typically − 2.6 V), low switching voltages (± 1 V for setting and resetting ...
Bosman, M +7 more
core +1 more source
Advanced Materials Technologies, EarlyView.Lead‐free bismuth halide perovskite memristors exhibit stable low‐voltage resistive switching behavior. The conductance‐activated quasi‐linear memristor model quantitatively reproduces the experimental hysteresis, confirming ion migration‐driven filament dynamics.
So‐Yeon Kim +4 more
wiley +1 more source