Results 31 to 40 of about 142,166 (304)
Silicon Oxide (SiOx): A Promising Material for Resistance Switching? [PDF]
, 2018 Interest in resistance switching is currently growing apace. The promise of novel high-density, low-power, high-speed nonvolatile memory devices is appealing enough, but beyond that there are exciting future possibilities for applications in hardware ...
Ielmini D. +11 more
core +3 more sources
Nanoscale Research Letters, 2018 Asymmetric resistive switching processes were observed in BaTiO3/Nb:SrTiO3 epitaxial heterojunctions. The SET switching time from the high-resistance state to low-resistance state is in the range of 10 ns under + 8 V bias, while the RESET switching time ...
Caihong Jia +4 more
doaj +1 more source
Treatment effect and drug-resistant mutations in Chinese AIDS patients switching to second-line antiretroviral therapy. [PDF]
PLoS ONE, 2014 This study aimed to investigate treatment effect, drug resistance changes, and their influencing factors in Chinese AIDS patients after switching to second-line antiretroviral therapy, and thus provide important information for the scale-up of second ...
Min Zhang +5 more
doaj +1 more source
Tunable Switching Behavior of GO-Based Memristors Using Thermal Reduction
Nanomaterials, 2022 This work reports on the fabrication of a novel planar reduced graphene oxide (rGO) memristor (MR) device. For the first time in the literature, the MR tunable resistive switching behavior is controlled by the GO reduction time at a constant temperature.
Muayad Abujabal +3 more
doaj +1 more source
Thin film deposition of metal oxides in resistance switching devices: electrode material dependence of resistance switching in manganite films. [PDF]
, 2013 The electric-pulse-induced resistance switching in layered structures composed of polycrystalline Pr1-xCaxMnO3 (PCMO) sandwiched between Pt bottom electrode and top electrodes of various metals (metal/PCMO/Pt) was studied by direct current current ...
Tachibana, Kunihide +5 more
core +1 more source
Multilevel Bipolar Electroforming-Free Resistive Switching Memory Based on Silicon Oxynitride
Applied Sciences, 2020 Resistive random-access memory (RRAM) devices are fabricated by utilizing silicon oxynitride (SiOxNy) thin film as a resistive switching layer. A SiOxNy layer is deposited on a p+-Si substrate and capped with a top electrode consisting of Au/Ni.
Nayan C. Das +4 more
doaj +1 more source
A Light‐Controlled Resistive Switching Memory
Advanced Materials, 2012 Sketch of the configuration of a light-controlled resistive switching memory. Light enters through the Al(2) O(3) uncovered surface and reaches the optically active p-Si substrate, where carriers are photogenerated and subsequently injected in the Al(2) O(3) layer when a suitable voltage pulse is applied.
Ungureanu, Mariana +6 more
openaire +3 more sources
Electrical engineering & Electromechanics, 2023 Introduction. For the efficient use of non-traditional and renewable sources of electrical energy, it is necessary to ensure their operation at the maximum power point, which is possible if the load resistance is equal to the output resistance of the ...
V. Y. Romashko +2 more
doaj +1 more source
Resistive switching phenomena of HfO2 films grown by MOCVD for resistive switching memory devices [PDF]
Journal of the Korean Physical Society, 2016 The resistive switching phenomena of HfO2 films grown by metalorganic chemical vapor deposition was studied for the application of ReRAM devices. In the fabricated Pt/HfO2/TiN memory cells, the bipolar resistive switching characteristics were observed, and the set and reset states were measured to be as low as 7 uA and 4 uA, respectively, at VREAD = 1 ...
Yun, Min Ju, Kim, Sungho, Kim, Hee-Dong
openaire +2 more sources
Resistive Switching of GaAs Oxide Nanostructures [PDF]
Materials, 2020 The paper presents the results of experimental studies of the influence of the local anodic oxidation control parameters on the geometric parameters of oxide nanoscale structures (ONS) and profiled nanoscale structures (PNS) on the surface of epitaxial structures of silicon doped gallium arsenide with an impurity concentration of 5 × 1017 cm−3.
Vadim Avilov +6 more
openaire +2 more sources