Results 21 to 30 of about 142,166 (304)

Modification of Electrical Properties of Thin La0.67Ca0.33MnO3 Films by Pulsed Thermocycling

Medžiagotyra, 2012
Highly resistive states were formed in nonhomogeneous thin La0.67Ca0.33MnO3 films at 80 K temperature after resistance switching induced by the pulsed thermocycling. Heating up to room temperature does not destroy the resistive states.
Fiodoras ANISIMOVAS, Steponas AŠMONTAS, Jonas GRADAUSKAS, Oleg KIPRIJANOVIČ, Bonifacas VENGALIS   +4 more
doaj   +1 more source

Multi-Level Resistive Switching in SnSe/SrTiO₃ Heterostructure Based Memristor Device

Nanomaterials, 2022
Multilevel resistive switching in memristive devices is vital for applications in non-volatile memory and neuromorphic computing. In this study, we report on the multilevel resistive switching characteristics in SnSe/SrTiO3(STO) heterojunction-based ...
Tsz-Lung Ho, Keda Ding, Nikolay Lyapunov, Chun-Hung Suen, Lok-Wing Wong, Jiong Zhao, Ming Yang, Xiaoyuan Zhou, Ji-Yan Dai   +8 more
doaj   +1 more source

Spike-Timing Dependent Plasticity in Unipolar Silicon Oxide RRAM Devices

Frontiers in Neuroscience, 2018
Resistance switching, or Resistive RAM (RRAM) devices show considerable potential for application in hardware spiking neural networks (neuro-inspired computing) by mimicking some of the behavior of biological synapses, and hence enabling non-von Neumann ...
Konstantin Zarudnyi, Adnan Mehonic, Luca Montesi, Mark Buckwell, Stephen Hudziak, Anthony J. Kenyon   +5 more
doaj   +1 more source

Influence of the height of carbon nanotubes on hot switching of Au/Cr-Au/MWCNT contact pairs [PDF]

, 2014
Gold coated Multi-Walled Carbon Nanotube (MWCNT) composites have been used for electrical contact surfaces in previous studies. It was shown that the composite could significantly improve switch lifetime, and exhibited potential as a useful contact ...
Lewis, Adam P., A. P. Lewis, Jiang, Liudi, J. W. McBride, H. Liu, L. Jiang, Liu, Hong, Pu, Suan-Hui, McBride, John W., S. H. Pu   +9 more
core   +1 more source

The impact of repetitive unclamped inductive switching on the electrical parameters of low-voltage trench power nMOSFETs [PDF]

, 2010
The impact of hot-carrier injection (HCI) due to repetitive unclamped inductive switching (UIS) on the electrical performance of low-voltage trench power n-type MOSFETs (nMOSFETs) is assessed.
Khan, Khalid Saeed, Jim Parkin, Parkin, Jim, George Petkos, Keith Heppenstall, Rutter, Philip, Ian Kennedy, Petkos, George, Adrian Koh, Heppenstall, Keith, Philip Rutter, Kennedy, Ian, Olayiwola Alatise, Khalid Khan, Alatise, Olayiwola M., Koh, Adrian   +15 more
core   +1 more source

Dynamic on‐state resistance instability characterization of a multi‐chip‐GaN MIS‐HEMTs cascode power module

Electronics Letters, 2023
The dynamic on‐state resistance instability of a high‐current cascode multi‐GaN‐chip power module under high frequency and voltage switching conditions is demonstrated in this paper.
Surya Elangovan, Stone Cheng, Wen‐Yea Jang, Edward Yi Chang   +3 more
doaj   +1 more source

Switching Power Universality in Unipolar Resistive Switching Memories [PDF]

Scientific Reports, 2016
AbstractWe investigate the resistive switching power from unipolar resistive switching current-voltage characteristics in various binary metal oxide films sandwiched by different metal electrodes, and find a universal feature (the so-called universality) in the switching power among these devices.
Kim, Jongmin, Jung, Kyooho, Kim, Yongmin, Jo, Yongcheol, Cho, Sangeun, Woo, Hyeonseok, Lee, Seongwoo, Inamdar, A. I., Hong, Jinpyo, Lee, Jeon-Kook, Kim, Hyungsang, Im, Hyunsik   +11 more
openaire   +3 more sources

Irregular Resistive Switching Behaviors of Al₂O₃-Based Resistor with Cu Electrode

Metals, 2021
In this work, we examined the irregular resistive switching behaviors of a complementary metal–oxide–semiconductor (CMOS)-compatible Cu/Al2O3/Si resistor device.
Hojeong Ryu, Sungjun Kim
doaj   +1 more source

Resistive Switching Characteristics of HfO₂ Thin Films on Mica Substrates Prepared by Sol-Gel Process

Nanomaterials, 2019
The resistive switching (RS) characteristics of flexible films deposited on mica substrates have rarely been reported upon, especially flexible HfO2 films.
Chao-Feng Liu, Xin-Gui Tang, Lun-Quan Wang, Hui Tang, Yan-Ping Jiang, Qiu-Xiang Liu, Wen-Hua Li, Zhen-Hua Tang   +7 more
doaj   +1 more source

Characterization of electroforming-free titanium dioxide memristors

Beilstein Journal of Nanotechnology, 2013
Metal–insulator–metal (MIM) structures based on titanium dioxide have demonstrated reversible and non-volatile resistance-switching behavior and have been identified with the concept of the memristor. Microphysical studies suggest that the development of
John Paul Strachan, J. Joshua Yang, L. A. Montoro, C. A. Ospina, A. J. Ramirez, A. L. D. Kilcoyne, Gilberto Medeiros-Ribeiro, R. Stanley Williams   +7 more
doaj   +1 more source