Results 1 to 10 of about 142,166 (304)
Resistance Switching in Polycrystalline C12A7 Electride [PDF]
Micromachines, 2022 The memory (memristive) properties of an electride material based on polycrystalline mayenite (C12A7:e−) were studied. The phase composition of the material has been confirmed by such methods as XRD, TEM, Raman, and infrared spectroscopy.
Ivan D. Yushkov +5 more
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Chap. 26 - Resistance Switching Effect in Octahedral framework oxide
Materials and Devices, 2022 Resistive Random-Access Memories (ReRAM) are an alternative way to create new memory devices. This is physically possible due to the existence in the material, of two resistive states clearly discreditable, as a function of voltage value and polarity ...
Yaovi GAGOU +3 more
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Self-Powered Resistance-Switching Properties of Pr0.7Ca0.3MnO3 Film Driven by Triboelectric Nanogenerator [PDF]
Nanomaterials, 2022 As one of the promising non-volatile memories (NVMs), resistive random access memory (RRAM) has attracted extensive attention. Conventional RRAM is deeply dependent on external power to induce resistance-switching, which restricts its applications.
Yanzi Huang +4 more
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PEROVSKITES AND OTHER FRAMEWORK STRUCTURE CRYSTALLINE MATERIALS (BOOK' FIRST PAGES AND PREFACE)
Materials and Devices, 2021 Perovskites are among the most famous materials due to their exceptional properties: they present nearly all existing types of interesting properties, in particular as ferroics or multiferroics, they may be insulators, (super)conductors, or ...
Saint-Grégoire P., Smirnov M.
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Engineering Silicon Oxide by Argon Ion Implantation for High Performance Resistance Switching
Frontiers in Materials, 2022 We report that implanting argon ions into a film of uniform atomic layer deposition (ALD)-grown SiOx enables electroforming and switching within films that previously failed to electroform at voltages <15 V.
L. Zhao +6 more
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A method to improve the performance of all-inorganic halide perovskite CsPbBr3 memory
Materials Research Express, 2022 All-inorganic perovskite has been generally used in memristor due to its outstanding characteristics such as superior optical performance, superior stability, tunable and highly effective photoluminescence.
Yali Yin +3 more
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Improved Performance of NbOx Resistive Switching Memory by In-Situ N Doping
Nanomaterials, 2022 Valence change memory (VCM) attracts numerous attention in memory applications, due to its high stability and low energy consumption. However, owing to the low on/off ratio of VCM, increasing the difficulty of information identification hinders the ...
Jing Xu +7 more
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Tunable resistive switching in shales
Results in Physics, 2022 Electrically induced resistive switching is a subject of increasing scientific interest because it is a candidate for universal non-volatile memory. We demonstrate resistive switching in a natural reservoir shale. The resistance of the rocks is repeatedly switched between the high-resistance state and low-resistance state, being controlled by the ...
Xinyang Miao +5 more
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Advanced Intelligent Systems, 2022 Ferroelectric Hf0.5Zr0.5O2 (HZO) thin films have attracted wide attention in terms of potential applications of nonvolatile ferroelectric memories. However, the effect of strain on the resistance switching characteristics of the ferroelectric HZO thin ...
Zuoao Xiao +5 more
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Resistive switching in nano-structures [PDF]
Scientific Reports, 2018 AbstractSolid state memory and switching devices aimed at replacing the flash memory technology operate by switching from the high to low resistance when conductive filaments are created in response to the electric pulse. The filaments are identified with either structurally different protrusions or purely electronic conductive pathways. The former can
V. G. Karpov, D. Niraula
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