Results 11 to 20 of about 142,166 (304)
High Performance Full-Inorganic Flexible Memristor with Combined Resistance-Switching. [PDF]
ACS Appl Mater Interfaces, 2022 Flexible memristors hold great promise for flexible electronics applications but are still lacking of good electrical performance together with mechanical flexibility.
Zhu Y +6 more
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Resistance requirements of threshold switching selectors in 1S1R crossbar array [PDF]
MATEC Web of Conferences, 2017 Leakage current suppression ability of threshold switching selectors is important for the high-density crossbar array of resistive random access memory (RRAM).
Lin Chenglong, Li Gaosheng, Jia Xueqing
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Resistance Switching Characteristics in ZnO-Based Nonvolatile Memory Devices
Advances in Materials Science and Engineering, 2013 Bipolar resistance switching characteristics are demonstrated in Pt/ZnO/Pt nonvolatile memory devices. A negative differential resistance or snapback characteristic can be observed when the memory device switches from a high resistance state to a low ...
Fu-Chien Chiu
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Electrical resistance switching of YbFe2O4 single crystal bulk
AIP AdvancesWe report the electrical resistance switching of YbFe2O4, which is one of the electronic ferroelectrics and shows multi-step polarization reversal. The electrical resistance of the single crystal bulk of YbFe2O4 was measured along the c-axis. Three kinds
Tomoko Nagata, Naoshi Ikeda
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IEEE Journal of the Electron Devices Society, 2018 Asymmetric sized single oxide diode (InZnOx/CuOx) with single resistor (Ti-doped NiO) device (1D-1R) was integrated into a crossbar array at room temperature to provide high current through the diode while keeping resistance switching localized in a ...
Minho Song +8 more
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The contact resistance performance of gold coated carbon-nanotube surfaces under low current switching [PDF]
, 2013 Multi-Walled CNT (MWCNT) are synthesized on a silicon wafer and sputter coated with a gold film. The planar surfaces are mounted on the tip of a piezo-electric actuator and mated with a gold coated hemispherical surface to form an electrical contact ...
Chianrabutra, Chamaporn +3 more
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Bias Polarity Dependent Threshold Switching and Bipolar Resistive Switching of TiN/TaOx/ITO Device
Metals, 2021 In this work, we demonstrate the threshold switching and bipolar resistive switching with non-volatile property of TiN/TaOx/indium tin oxide (ITO) memristor device.
Hojeong Ryu, Beomjun Park, Sungjun Kim
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Resistance switching memories are memristors [PDF]
Applied Physics A, 2011 All 2-terminal non-volatile memory devices based on resistance switching are memristors, regardless of the device material and physical operating mechanisms. They all exhibit a distinctive “fingerprint” characterized by a pinched hysteresis loop confined to the first and the third quadrants of the v–i plane whose contour shape in general changes with ...
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Polaronic Emergent Phases in Manganite-based Heterostructures
Crystals, 2019 Transition metal functional oxides, e.g., perovskite manganites, with strong electron, spin and lattice correlations, are well-known for different phase transitions and field-induced colossal effects at the phase transition.
Vasily Moshnyaga, Konrad Samwer
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Synaptic Characteristics from Homogeneous Resistive Switching in Pt/Al2O3/TiN Stack
Nanomaterials, 2020 In this work, we propose three types of resistive switching behaviors by controlling operation conditions. We confirmed well-known filamentary switching in Al2O3-based resistive switching memory using the conventional device working operation with a ...
Hojeong Ryu, Sungjun Kim
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