Results 1 to 10 of about 64,718 (170)

Pruning random resistive memory for optimizing analog AI [PDF]

Nature Communications
The rapid expansion of AI models has intensified concerns over energy consumption. Analog in-memory computing with resistive memory offers a promising, energy-efficient alternative, yet its practical deployment is hindered by programming challenges and ...
Yi Li, Songqi Wang, Yaping Zhao, Shaocong Wang, Bo Wang, Woyu Zhang, Yangu He, Ning Lin, Binbin Cui, Xi Chen, Shiming Zhang, Hao Jiang, Peng Lin, Xumeng Zhang, Feng Zhang, Xiaojuan Qi, Zhongrui Wang, Xiaoxin Xu, Dashan Shang, Qi Liu, Han Wang, Kwang-Ting Cheng, Ming Liu   +22 more
doaj   +2 more sources

Multistate resistive switching in silver nanoparticle films [PDF]

Science and Technology of Advanced Materials, 2015
Resistive switching devices have garnered significant consideration for their potential use in nanoelectronics and non-volatile memory applications.
Eric J Sandouk, James K Gimzewski, Adam Z Stieg   +2 more
doaj   +2 more sources

Soft and flexible: core-shell ionic liquid resistive memory for electronic synapses [PDF]

Microsystems & Nanoengineering, 2021
The human brain is the most efficient computational and intelligent system, and researchers are trying to mimic the human brain using solid-state materials.
Muhammad Umair Khan, Qazi Muhammad Saqib, Mahesh Y. Chougale, Rayyan Ali Shaukat, Jungmin Kim, Jinho Bae   +5 more
doaj   +2 more sources

Multiple Resistive Switching Mechanisms in Graphene Oxide-Based Resistive Memory Devices [PDF]

Nanomaterials, 2022
Among the different graphene derivatives, graphene oxide is the most intensively studied material as it exhibits reliable and repeatable resistive switching.
Sergei Koveshnikov, Oleg Kononenko, Oleg Soltanovich, Olesya Kapitanova, Maxim Knyazev, Vladimir Volkov, Eugene Yakimov   +6 more
doaj   +2 more sources

Ratio-based multi-level resistive memory cells [PDF]

Scientific Reports, 2021
Ratio-based encoding has recently been proposed for single-level resistive memory cells, in which the resistance ratio of a pair of resistance-switching devices, rather than the resistance of a single device (i.e.
Miguel Angel Lastras-Montaño, Osvaldo Del Pozo-Zamudio, Lev Glebsky, Meiran Zhao, Huaqiang Wu, Kwang-Ting Cheng   +5 more
doaj   +2 more sources

Sub-nanosecond heat-based logic, writing and reset in an antiferromagnetic magnetoresistive memory [PDF]

PhotoniX
Thermal logic aims to create thermal counterparts to electronic circuits. In this work, we investigate experimentally the response of an analog memory device based on a thin film of an antiferromagnetic metal CuMnAs to bursts of heat pulses generated by ...
M. Surýnek, A. Farkaš, J. Zubáč, P. Kubaščík, K. Olejník, F. Krizek, L. Nádvorník, T. Ostatnický, R. P. Campion, V. Novák, T. Jungwirth, P. Němec   +11 more
doaj   +2 more sources

Spike-time dependent plasticity of tailored ZnO nanorod-based resistive memory for synaptic learning

Journal of Science: Advanced Materials and Devices, 2023
Metal oxide resistive memory is a potential device that can substantially influence the current roadmap for nonvolatile memory and neuromorphic computing.
Shubham V. Patil, Navaj B. Mullani, Kiran Nirmal, Gihwan Hyun, Batyrbek Alimkhanuly, Rajanish K. Kamat, Jun Hong Park, Sanghoek Kim, Tukaram D. Dongale, Seunghyun Lee   +9 more
doaj   +1 more source

Stateful Logic Using Phase Change Memory

IEEE Journal on Exploratory Solid-State Computational Devices and Circuits, 2022
Stateful logic is a digital processing-in-memory (PIM) technique that could address von Neumann memory bottleneck challenges while maintaining backward compatibility with standard von Neumann architectures.
Barak Hoffer, Nicolas Wainstein, Christopher M. Neumann, Eric Pop, Eilam Yalon, Shahar Kvatinsky   +5 more
doaj   +1 more source

Experimental Demonstration of Multilevel Resistive Random Access Memory Programming for up to Two Months Stable Neural Networks Inference Accuracy

Advanced Intelligent Systems, 2022
Crossbars of resistive memories, or memristors, provide a road to reduce the energy consumption of artificial neural networks, by naturally implementing multiply accumulate operations, their most basic calculations.
Eduardo Esmanhotto, Tifenn Hirtzlin, Djohan Bonnet, Niccolo Castellani, Jean-Michel Portal, Damien Querlioz, Elisa Vianello   +6 more
doaj   +1 more source

Transparent, Flexible, and Low‐Operating‐Voltage Resistive Switching Memory Based on Al2O3/IZO Multilayer

Global Challenges, 2022
In this study, a different number of indium zinc oxide (IZO) interlayers are fabricated into Al2O3‐based transparent resistive switching memory on a transparent indium tin oxide (ITO)/glass substrate at room temperature.
Jaemin Park, Daihong Huh, Soomin Son, Wonjoong Kim, Sucheol Ju, Heon Lee   +5 more
doaj   +1 more source