Results 31 to 40 of about 64,817 (269)

First evidence of resistive switching in polycrystalline GaV4S8 thin layers [PDF]

open access: yes, 2011
Recently a new type of reversible and non-volatile resistive switching was discovered in single crystals of Mott insulators AM4X8 (A = Ga, Ge; M = V, Nb, Ta; X = S, Se).
Beck   +19 more
core   +3 more sources

Origin of multi-level switching and telegraphic noise in organic nanocomposite memory devices. [PDF]

open access: yes, 2016
The origin of negative differential resistance (NDR) and its derivative intermediate resistive states (IRSs) of nanocomposite memory systems have not been clearly analyzed for the past decade.
Ahn, Geun Ho   +9 more
core   +1 more source

Controlled inter-state switching between quantized conductance states in resistive devices for multilevel memory [PDF]

open access: yes, 2019
A detailed understanding of quantization conductance (QC), their correlation with resistive switching phenomena and controlled manipulation of quantized states is crucial for realizing atomic-scale multilevel memory elements.
Deswal, Sweety   +3 more
core   +2 more sources

Enhanced resistive switching performance in bilayer Pt/TiO2/Co3O4/Pt memory device

open access: yesMaterials Research Express, 2021
In this work, the bilayer Pt/TiO _2 /Co _3 O _4 /Pt and single-layer Pt/TiO _2 /Pt memory devices were fabricated for investigating their resistive switching characteristics.
Lilan Zou, Jianmei Shao, Dinghua Bao
doaj   +1 more source

Modeling-Based Design of Memristive Devices for Brain-Inspired Computing

open access: yesFrontiers in Nanotechnology, 2021
Resistive switching random access memory (RRAM) has emerged for non-volatile memory application with the features of simple structure, low cost, high density, high speed, low power, and CMOS compatibility.
Yudi Zhao   +4 more
doaj   +1 more source

Highly Improved Switching Properties in Flexible Aluminum Oxide Resistive Memories Based on a Multilayer Device Structure

open access: yesAdvanced Electronic Materials, 2018
Multilayer aluminum oxide (Al2O3) resistive memory devices, exhibiting robust switching properties fabricated on a flexible polyethylene naphthalate substrate using only physical vapor deposition methods at room temperature, are reported here.
Jingon Jang   +5 more
doaj   +1 more source

Multistate resistive switching behaviors for neuromorphic computing in memristor

open access: yesMaterials Today Advances, 2021
Conventional Von Neumann computing systems encounter increasing challenges in the big-data era due to the constraints by the separated data storage and processing. Resistive random-access memory provides dual functionalities of data storage and computing
B. Sun   +7 more
doaj   +1 more source

A Complementary Resistive Switch-based Crossbar Array Adder

open access: yes, 2015
Redox-based resistive switching devices (ReRAM) are an emerging class of non-volatile storage elements suited for nanoscale memory applications. In terms of logic operations, ReRAM devices were suggested to be used as programmable interconnects, large ...
Linn, E.   +3 more
core   +1 more source

Nonpolar resistive switching in Cu/SiC/Au non-volatile resistive memory devices [PDF]

open access: yes, 2014
Amorphous silicon carbide (a-SiC) based resistive memory (RM) Cu/a-SiC/Au devices were fabricated and their resistive switching characteristics investigated.
Bard A. J.   +5 more
core   +1 more source

Memory and Resistance [PDF]

open access: yesRadical History Review, 2019
Abstract Joseph DeLappe is a visual artist and activist. Images and texts in this feature detail a diversity of creative projects and actions that challenge and question our contemporary militaristic context. These works explore the intersections of art, technology, social engagement, and interventionist strategies. The included projects
openaire   +1 more source

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