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Resistive RAM With Multiple Bits Per Cell: Array-Level Demonstration of 3 Bits Per Cell
IEEE Transactions on Electron Devices, 2019Edith Beigné +2 more
exaly
The Effect of Tin on PECVD-Deposited Germanium Sulfide Thin Films for Resistive RAM Devices
Materials Sciences and Applications, 2017Benjamin I Poulter
exaly
The observation of "Conduction Spot" on NiO resistance RAM
Extended Abstracts of the 2010 International Conference on Solid State Devices and Materials, 2010T. Fujii +8 more
openaire +1 more source

