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PUF designed with Resistive RAM and Ternary States
Proceedings of the 11th Annual Cyber and Information Security Research Conference, 2016The designs of Physically Unclonable Functions (PUFs) described in this paper are based on Resistive RAMs incorporating ternary states with the objective to reduce false negative authentications (FNA) with low Challenge-Response-Pair (CRP) error rates.
Bertrand Cambou, Marius Orlowski
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Resistance is not futile [resistive RAM]
Engineering & Technology, 2008The article presents a type of RAM that researchers believed could replace DRAM and flash memory. The operating principle of this resistive RAM is also presented in this paper.
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A strong arbiter PUF using resistive RAM
2016 International Conference on Embedded Computer Systems: Architectures, Modeling and Simulation (SAMOS), 2016Physically Unclonable Functions (PUF) are the cost effective and reliable security primitives widely used in authentication and in-place secret key generation applications. With growing research in the area of non-CMOS technologies for memories and circuits, it's important to understand their implications on the design of security primitives. Resistive
Swaroop Ghosh, Rekha Govindaraj
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Multilevel operation in oxide based resistive RAM with SET voltage modulation
, 2016 International audienceIn this paper multilevel storage characteristic in Oxide-based Resistive RAM (OxRRAM) is demonstrated by modulating the amplitude of the cell programming voltages. Four resistance levels are clearly obtained.
Mathieu Moreau, Hassan Aziza
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Resistive RAMs as analog trimming elements
Solid-State Electronics, 2018Abstract This work investigates the use of Resistive Random Access Memory (RRAM) as an analog trimming device. The analog storage feature of the RRAM cell is evaluated and the ability of the RRAM to hold several resistance states is exploited to propose analog trim elements. To modulate the memory cell resistance, a series of short programming pulses
H. Aziza, A. Perez, J.M. Portal
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Scrapie resistance and production traits in Rambouillet rams: Ram performance test 2002–2006
Research in Veterinary Science, 2008Sheep possessing alleles for the prion protein with glutamine (Q) or histidine, both reported as Q, at codon 171 are highly susceptible to scrapie. Incidence of scrapie infection is rare when animals possess at least one allele for arginine (R) at codon 171.
Brenda M, Alexander +2 more
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Design and Optimization of Nonvolatile Multibit 1T1R Resistive RAM
IEEE Transactions on Very Large Scale Integration (VLSI) Systems, 2014Memristor-based random access memory (RAM) is being explored as a potential replacement for flash memory to sustain the historic trends in the improvement of density, access time, and energy consumption of nonvolatile memory. In this paper, we present the detailed functionality of multibit one-transistor one-memristor (1T1R) cell-based memory arrays ...
Mahmoud Zangeneh, Ajay Joshi
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A Secure Integrity Checking System for Nanoelectronic Resistive RAM
IEEE Transactions on Very Large Scale Integration (VLSI) Systems, 2019Recent advances in resistive random access memory (RRAM) as high density, low power, and faster memory systems drive the need for devising a more lightweight integrity checking system for RRAM. In this paper, we design a new tag generation system for integrity checking of RRAM.
Md. Badruddoja Majumder +3 more
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Opportunities and Challenges of Resistive RAM for Neuromorphic Applications
2018 IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA), 2018Many technological concepts of Resistive RAM (RRAM) have been demonstrated in recent years. Simultaneously, a paradigm shift towards integrating computational functions into memory has been observed, with neuromorphic networks as one example. We discuss where and how RRAM might come in as a potential functional device for developing hardware ...
R. Degraeve +19 more
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Resistive Switching Characteristics of Zinc Oxide Resistive RAM Doped with Nickel
ECS Transactions, 2013Resistive switching characteristics of zinc oxide thin films with nickel doped were investigated in this paper. A device cell with the structure of TiN/ZnO/Ni/ZnO/Pt/substrate was fabricated by radio frequency magnetron sputtering. The cells showed stable bipolar with an on/off ratio of ~104 at a set voltage of 2V.
Sun Wenxiang +5 more
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