Results 241 to 250 of about 244,153 (287)
Multilevel Operation in Oxide Based Resistive RAM With SET Voltage Modulation
, 2016 International audienceIn this paper multilevel storage characteristic in Oxide-based Resistive RAM (OxRRAM) is demonstrated by modulating the amplitude of the cell programming voltages. Four resistance levels are clearly obtained.
Mathieu Moreau, Hassen Aziza
exaly +2 more sources
Incorporating Variability of Resistive RAM in Circuit Simulations Using the Stanford–PKU Model [PDF]
IEEE Nanotechnology Magazine, 2020 Intrinsic variability observed in resistive-switching devices (cycle-to-cycle and device-to-device) is widely recognised as a major hurdle for widespread adoption of Resistive RAM technology.
Mehrdad Biglari +2 more
exaly +2 more sources
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Neuromorphic Computing based on Resistive RAM
Proceedings of the Great Lakes Symposium on VLSI 2017, 2017Resistive random access memory (RRAM) has gained significant attentions because of its excellent characteristics which are suitable for next-generation non-volatile memory applications. It is also very attractive to build neuromorphic computing chip based on RRAM cells due to non-volatile and analog properties.
Zixuan Chen +5 more
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Multistate Register Based on Resistive RAM
IEEE Transactions on Very Large Scale Integration (VLSI) Systems, 2015In recent years, memristive technologies, such as resistive random access memory (RRAM), have emerged. These technologies are usually considered as alternates for static RAM, dynamic RAM, and Flash. In this paper, a novel digital circuit, the multistate register, is proposed.
Ravi Patel 0001 +3 more
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2018
Resistive random-access memory (ReRAM) is a promising non-volatile memory with the configurability of resistance programmed by pulse voltage or current. ReRAM can be used for memory and computation. In this chapter, we will start with these applications and design components for ReRAM.
Qing Yang, Bonan Yan, Hai Li
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Resistive random-access memory (ReRAM) is a promising non-volatile memory with the configurability of resistance programmed by pulse voltage or current. ReRAM can be used for memory and computation. In this chapter, we will start with these applications and design components for ReRAM.
Qing Yang, Bonan Yan, Hai Li
openaire +1 more source
PUF designed with Resistive RAM and Ternary States
Proceedings of the 11th Annual Cyber and Information Security Research Conference, 2016The designs of Physically Unclonable Functions (PUFs) described in this paper are based on Resistive RAMs incorporating ternary states with the objective to reduce false negative authentications (FNA) with low Challenge-Response-Pair (CRP) error rates.
Bertrand Cambou, Marius Orlowski
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Resistance is not futile [resistive RAM]
Engineering & Technology, 2008The article presents a type of RAM that researchers believed could replace DRAM and flash memory. The operating principle of this resistive RAM is also presented in this paper.
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A strong arbiter PUF using resistive RAM
2016 International Conference on Embedded Computer Systems: Architectures, Modeling and Simulation (SAMOS), 2016Physically Unclonable Functions (PUF) are the cost effective and reliable security primitives widely used in authentication and in-place secret key generation applications. With growing research in the area of non-CMOS technologies for memories and circuits, it's important to understand their implications on the design of security primitives. Resistive
Swaroop Ghosh, Rekha Govindaraj
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Scrapie resistance and production traits in Rambouillet rams: Ram performance test 2002–2006
Research in Veterinary Science, 2008Sheep possessing alleles for the prion protein with glutamine (Q) or histidine, both reported as Q, at codon 171 are highly susceptible to scrapie. Incidence of scrapie infection is rare when animals possess at least one allele for arginine (R) at codon 171.
Brenda M, Alexander +2 more
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Design and Optimization of Nonvolatile Multibit 1T1R Resistive RAM
IEEE Transactions on Very Large Scale Integration (VLSI) Systems, 2014Memristor-based random access memory (RAM) is being explored as a potential replacement for flash memory to sustain the historic trends in the improvement of density, access time, and energy consumption of nonvolatile memory. In this paper, we present the detailed functionality of multibit one-transistor one-memristor (1T1R) cell-based memory arrays ...
Mahmoud Zangeneh, Ajay Joshi
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