Results 231 to 240 of about 244,153 (287)

Two-layer hierarchical MPPT strategy of PV systems based on AF-EPO algorithm under complex irradiance conditions. [PDF]

Front Neurorobot
Wang L, Cui J, Ge C, Lun Z.
europepmc   +1 more source

Enabling Radiation Hardness in Solid-State NAND Storage Utilizing a Laminated Ferroelectric Stack. [PDF]

Nano Lett
Fernandes L, Wodzro S, Venkatesan P, Ravikumar P, Lee MY, Shon M, Chakraborty D, Song T, Kang S, Soliman S, Tian M, Yeager J, Adler J, Chen J, Wang Z, Wolfe D, Yu S, Padovani A, Datta S, Ray B, Khan A.   +20 more
europepmc   +1 more source

Recent Advancements in 2D Material-Based Memristor Technology Toward Neuromorphic Computing. [PDF]

Micromachines (Basel)
Park S, Naqi M, Lee N, Park S, Hong S, Lee BH.   +5 more
europepmc   +1 more source

Vertically Aligned Carbon Nanotubes Grown on Copper Foil as Electrodes for Electrochemical Double Layer Capacitors. [PDF]

Nanomaterials (Basel)
Nwanno CE, Gotame RC, Watt J, Kuo W, Li W.   +4 more
europepmc   +1 more source

Fast-Write Resistive RAM (RRAM) for Embedded Applications

IEEE Design and Test of Computers, 2011
Especially for microcontroller and mobile applications, embedded nonvolatile memory is an important technology offering to reduce power and provide local persistent storage. This article describes a new resistive RAM device with fast write operation to improve the speed of embedded nonvolatile memories.
Ming-Jinn Tsai, Shyh-Shyuan Sheu, Heng-Yuan Lee   +2 more
exaly   +4 more sources

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Research on Memristor Oriented to Resistive RAM

Applied Mechanics and Materials, 2013
With the process of high integration, low power consumption, small size in the semiconductor industry, resistive RAM has drawn increasing attention. The discovery of the memristor brings much more to this study. These researches focus on resistive switching characteristics of different materials and analysis of resistive switching mechanisms.
Yu Hua Tang
exaly   +2 more sources

Graphene-HfO2-based resistive RAM memories

Microelectronic Engineering, 2016
Graphene, a two dimensional material with remarkable electronic properties, has attracted a huge interest among scientist during the last decade. We report the fabrication of Graphene-HfO2-based resistive RAM memories. We insert graphene layers between the oxide layer and the gold top electrode resulting in stabilization of a low resistance state ...
Mannequin, Cédric, Delamoreanu, Alexandru, Latu-Romain, Laurence, Jousseaume, Vincent, Grampeix, Helen, David, Sylvain, Rabot, Caroline, Zenasni, Aziz, Vallee, Christophe, Gonon, Patrice   +9 more
openaire   +3 more sources

Resistive RAMs as Analog Trimming Elements

Solid-State Electronics, 2018
Abstract This work investigates the use of Resistive Random Access Memory (RRAM) as an analog trimming device. The analog storage feature of the RRAM cell is evaluated and the ability of the RRAM to hold several resistance states is exploited to propose analog trim elements. To modulate the memory cell resistance, a series of short programming pulses
Hassen Aziza, J M Portal
exaly   +2 more sources

True Random Number Generator Integration in a Resistive RAM Memory Array Using Input Current Limitation

IEEE Nanotechnology Magazine, 2020
International audienceA novel True Random Number Generator circuit fabricated in a 130nm HfO2-based resistive RAM process is presented. The generation of the random bit stream is based on a specific programming sequence applied to a dedicated memory ...
Mathieu Moreau, Jeremy Postel-Pellerin
exaly   +2 more sources