Results 51 to 60 of about 1,751 (142)

Review of Memristors for In‐Memory Computing and Spiking Neural Networks

Advanced Intelligent Systems, Volume 8, Issue 3, March 2026.
Memristors uniquely enable energy‐efficient, brain‐inspired computing by acting as both memory and synaptic elements. This review highlights their physical mechanisms, integration in crossbar arrays, and role in spiking neural networks. Key challenges, including variability, relaxation, and stochastic switching, are discussed, alongside emerging ...
Mostafa Shooshtari, Teresa Serrano‐Gotarredona, Bernabé Linares‐Barranco   +2 more
wiley   +1 more source

Total dose hardness of TiN/HfOx/TiN resistive random access memory

, 2014
Resistive random access memory based on TiN/HfOx/TiN has been fabricated, with the stoichiometry of the HfOx layer altered through control of atomic layer deposition (ALD) temperature. Sweep and pulsed electrical characteristics were extracted before and
de Groot, Kees, Huang, Ruomeng, Morgan, Katrina, Potter, Kenneth, Redman-White, William, Shaw, Chris   +5 more
core   +1 more source

Nature of Cu Interstitials in Al2O3 and the Implications for Filament Formation in Conductive Bridge Random Access Memory Devices [PDF]

, 2016
Resistive random access memory (RRAM) is a prime candidate to replace Flash memory. Of the two classes of RRAM, conductive bridge RAM (CBRAM) is favoured over that based on filaments of oxygen vacancies because of its larger on/off resistance ratio.
Dawson, JA, Robertson, J
core   +1 more source

High Perpendicular Anisotropy in Mo‐Inserted Mg Composite Free Layer for Nonvolatile Magnetoresistive Random Access Memory in 4K‐400K Universal Temperature Applications

Small, Volume 22, Issue 14, 6 March 2026.
A universal temperature‐friendly nonvolatile MRAM (UTF‐NVMRAM) operating from 4 to 400K is realized by optimizing the MgO/MgOx capping layer and incorporating Mo into the CoFeB composite‐free layer. This architecture minimizes temperature sensitivity in switching voltage and thermal stability factor while demonstrating potential CMOS back‐end‐of‐line ...
Ming‐Chun Hong, Chen‐Yu Yang, Hsin‐Han Lee, Guan‐Long Chen, Ching Shih, Yu‐Chen Hsin, Chiao‐Yun Lo, Sin‐You Huang, Cheng‐Yi Shih, Shan‐Yi Yang, I‐Jung Wang, Yao‐Jen Chang, Shih‐Ching Chiu, Yi‐Hui Su, Chih‐Yao Wang, Kuan‐Ming Chen, Ho‐Lin Tsai, Jeng‐Hua Wei, Shyh‐Shyuan Sheu, Wei‐Chung Lo, Shih‐Chieh Chang, Tuo‐Hung Hou   +21 more
wiley   +1 more source

Stochastic Memristive Devices for Computing and Neuromorphic Applications

, 2013
Nanoscale resistive switching devices (memristive devices or memristors) have been studied for a number of applications ranging from non-volatile memory, logic to neuromorphic systems.
Choi, Shinhyun, Gaba, Siddharth, Lu, Wei, Sheridan, Patrick, Zhou, Jiantao   +4 more
core   +1 more source

Variability-tolerant memristor-based ratioed logic in crossbar array [PDF]

, 2018
The final publication is available at ACM via http://dx.doi.org/10.1145/3232195.3232213The advent of the first TiO2-based memristor in 2008 revived the scientific interest both from academia and industry for this de- vice technology, with several ...
Escudero López, Manuel, Moll Echeto, Francisco de Borja, Rubio Sola, Jose Antonio, Vourkas, Ioannis   +3 more
core   +1 more source

Cryogenic Neuromorphic Synaptic Behavior in 180 nm Silicon Transistors for Emerging Computing Systems

Advanced Intelligent Systems, Volume 8, Issue 2, February 2026.
This study investigates the neuromorphic plasticity behavior of 180 nm bulk complementary metal oxide semiconductor (CMOS) transistors at cryogenic temperatures. The observed hysteresis data reveal a signature of synaptic behavior in CMOS transistors at 4 K.
Fiheon Imroze, Bhavani Yalagala, Naveen Kumar, Mostafa Elsayed, Meraj Ahmad, Robert Graham, Vihar Georgiev, Hadi Heidari, Martin Weides   +8 more
wiley   +1 more source

High Performance Resistance Switching Memory Devices Using Spin-on Silicon Oxide [PDF]

, 2018
In this paper, we present high performance resistance switching memory devices (RRAM) with an SiO 2 -like active layer formed from spin-on hydrogen silsesquioxane (HSQ). Our metal-insulator-metal (MIM) devices exhibit switching voltages of less than 1 V,
Buckwell, M, Kenyon, AJ, Mehonic, A, Montesi, L, Ng, W   +4 more
core   +1 more source

A Fully Integrated Analog Processing‐in‐Memory System Based on Charge‐Trap Flash Synapse Arrays and Successive Integration‐and‐Rescaling Neurons

Advanced Intelligent Systems, Volume 8, Issue 2, February 2026.
A fully integrated analog processing‐in‐memory system is demonstrated, combining charge‐trap flash synapse arrays with a successive integration‐and‐rescaling neuron circuit. The architecture performs bit‐sliced analog accumulation with high linearity and low power, achieving efficient and scalable analog in‐memory computing and bridging device‐level ...
Sojoong Kim, Yeonwoo Kim, Woo Young Choi, Minsuk Koo, Yoon Kim   +4 more
wiley   +1 more source

A Comparative Study of Digital Memristor‐Based Processing‐In‐Memory from a Device and Reliability Perspective

Advanced Electronic Materials, Volume 12, Issue 1, 7 January 2026.
Processing‐in‐memory (PIM) architectures based on memristors offer significant potential for low‐power computation and the realization of novel computing paradigms by performing logic operations directly within memory. This review summarizes recent advances in memristor‐based logic techniques, with particular emphasis on reliability considerations and ...
Thomas Neuner, Henriette Padberg, Lior Kornblum, Eilam Yalon, Pedram Khalili Amiri, Shahar Kvatinsky   +5 more
wiley   +1 more source