Enhanced Resistive Switching and Synaptic Characteristics of ALD Deposited AlN-Based RRAM by Positive Soft Breakdown Process. [PDF]
Yang S, Park J, Cho Y, Lee Y, Kim S.
europepmc +1 more source
Investigation of the Temperature Effect on Electrical Characteristics of Al/SiO2/n++-Si RRAM Devices. [PDF]
Wiśniewski P +3 more
europepmc +1 more source
Current-limiting and ultrafast system for the characterization of resistive random access memories [PDF]
Aymerich Humet, Xavier +6 more
core +2 more sources
Impact of Rapid Thermal Annealing and Oxygen Concentration on Symmetry Bipolar Switching Characteristics of Tin Oxide-Based Memory Devices. [PDF]
Chen KH +5 more
europepmc +1 more source
Investigation of Electron Transport Layer Influence on Asymmetric Bipolar Switching in Transparent BST-Based RRAM Devices. [PDF]
Chen KH +5 more
europepmc +1 more source
Compute-in-memory implementation of state space models for event sequence processing. [PDF]
Zhang X +6 more
europepmc +1 more source
Progress of emerging non-volatile memory technologies in industry. [PDF]
Hellenbrand M +2 more
europepmc +1 more source
Resistive Switching Random-Access Memory (RRAM): Applications and Requirements for Memory and Computing. [PDF]
Ielmini D, Pedretti G.
europepmc +1 more source
Oxygen-Plasma-Treated Al/TaOX/Al Resistive Memory for Enhanced Synaptic Characteristics. [PDF]
Kim G, Park S, Koo M, Kim S.
europepmc +1 more source

