Physical Picture of Filaments in Reset Process of Resistive Random Access Memory Consisting of Pt/NiO/Pt Structure [PDF]
Masataka Yoshihara +3 more
openalex +1 more source
Real‐Time 3D Ultrasound Imaging with an Ultra‐Sparse, Low Power Architecture
This article presents a novel, ultra‐sparse ultrasound architecture that paves the way for wearable real‐time 3D imaging. By integrating a unique convolutional array with chirped data acquisition, the system achieves high‐resolution volumetric scans at a fraction of the power and hardware complexity.
Colin Marcus +9 more
wiley +1 more source
Fading memory is the capability of a physical system to approach a unique asymptotic behaviour, irrespective of the initial conditions, when stimulated by an input from a certain class.
N. Schmitt +7 more
doaj +1 more source
Unraveling the Role of Polydopamines in Resistive Switching in Al/Polydopamine/Al Structure for Organic Resistive Random-Access Memory. [PDF]
Yun J, Kim D.
europepmc +1 more source
A compact model of hafnium-oxide-based resistive random access memory
Francesco Maria Puglisi +3 more
openalex +2 more sources
An In Situ Embedded B‐MOF Sponge With Shape‐Memory for All‐in‐One Diabetic Wound Therapy
A smart shape‐memory sponge dressing (P1A3@B‐MOF) is developed for accelerated diabetic wound healing. It achieves pH‐responsive corelease of Zn2+ and salvianolic acid B, synergistically providing antibacterial action, repolarizing macrophages to the M2 phenotype, and promoting angiogenesis.
Hai Zhou +11 more
wiley +1 more source
Multiphysics Simulation of Crosstalk Effect in Resistive Random Access Memory with Different Metal Oxides. [PDF]
Xie H +6 more
europepmc +1 more source
Néel Tensor Torque in Polycrystalline Antiferromagnets
This work introduces a Néel tensor torque based on a rank‐two symmetric tensor capturing spin correlations in a polycrystalline antiferromagnet. It shows the Néel tensor can be shaped and reshaped through the spin‐orbit torque (SOT) technique, enabling field‐free SOT switching with a specific polarity of the adjacent ferromagnet. This discovery opens a
Chao‐Yao Yang +4 more
wiley +1 more source
Uniform self-rectifying resistive random-access memory based on an MXene-TiO2 Schottky junction. [PDF]
Zang C +6 more
europepmc +1 more source

