Results 141 to 150 of about 30,168 (284)

Low-Frequency Noise-Based Mechanism Analysis of Endurance Degradation in Al/αTiO_x/Al Resistive Random Access Memory Devices. [PDF]

Materials (Basel), 2023
Lee JK, Pyo J, Kim S.
europepmc   +1 more source

Real‐Time 3D Ultrasound Imaging with an Ultra‐Sparse, Low Power Architecture

Advanced Healthcare Materials, EarlyView.
This article presents a novel, ultra‐sparse ultrasound architecture that paves the way for wearable real‐time 3D imaging. By integrating a unique convolutional array with chirped data acquisition, the system achieves high‐resolution volumetric scans at a fraction of the power and hardware complexity.
Colin Marcus, Md Osman Goni Nayeem, Aastha Shah, Jason Hou, Shrihari Viswanath, Maya Eusebio, David Sadat, Anantha P. Chandrakasan, Tolga Ozmen, Canan Dagdeviren   +9 more
wiley   +1 more source

Physically Transient, Flexible, and Resistive Random Access Memory Based on Silver Ions and Egg Albumen Composites. [PDF]

Nanomaterials (Basel), 2022
Wang L, Zhang Y, Zhang P, Wen D.
europepmc   +1 more source

Oxide based non-volatile resistance random access memory [PDF]

, 2019
As one of the potential candidates for next generation non-volatile memory, resistance random access memory (RRAM) has attracted great attention recently. The study of resistive switching (RS) phenomenon could retrospect from 1960s and in nowadays various materials and structures have been gradually explored to fabricate RRAM devices.
openaire   +2 more sources

An In Situ Embedded B‐MOF Sponge With Shape‐Memory for All‐in‐One Diabetic Wound Therapy

Advanced Healthcare Materials, EarlyView.
A smart shape‐memory sponge dressing (P1A3@B‐MOF) is developed for accelerated diabetic wound healing. It achieves pH‐responsive corelease of Zn2+ and salvianolic acid B, synergistically providing antibacterial action, repolarizing macrophages to the M2 phenotype, and promoting angiogenesis.
Hai Zhou, Chaoyang Huang, Yanqi Chen, Tingzi Zhao, Fengyi Zhu, Gong Jun, Jinrong Zhang, Yingsong Pan, Qiulan Wen, Lei Yang, Huihui Zhang, Lianglong Chen   +11 more
wiley   +1 more source

Ultra-High-Speed Accelerator Architecture for Convolutional Neural Network Based on Processing-in-Memory Using Resistive Random Access Memory. [PDF]

Sensors (Basel), 2023
Wang H, Wang J, Hu H, Li G, Hu S, Yu Q, Liu Z, Chen T, Zhou S, Liu Y.   +9 more
europepmc   +1 more source

Wound Geometry Determines Whether Aligned‐Fiber Scaffolds Accelerate or Impede Diabetic Wound Healing: A Biased Random Walk Analysis

Advanced Healthcare Materials, EarlyView.
Wound closure is governed by geometry‐orientation coupling: aligned fibers speed migration along their axis but hinder perpendicular advance. In vivo diabetic wound experiments with composition‐matched fibrin, combined with an anisotropic diffusion (biased random‐walk) model, quantify this trade‐off and generate a healing landscape.
Yin‐Yuan Huang, Xiangjun Peng, Yuxuan Huang, Kunkoo Kim, Chengli Li, Peilun Hu, Sean J. Wang, Rohan Avula, Chun‐Yi Yang, Pengchao Ma, Shuhui Yang, Shumeng Jiang, Guy M. Genin, Xiumei Wang   +13 more
wiley   +1 more source

First Order Rate Law Analysis for Reset State in Vanadium Oxide Thin Film Resistive Random Access Memory Devices. [PDF]

Nanomaterials (Basel), 2023
Chen KH, Cheng CM, Wang NF, Hung HW, Li CY, Wu S.   +5 more
europepmc   +1 more source

Transistor‐Level Activation Functions via Two‐Gate Designs: From Analog Sigmoid and Gaussian Control to Real‐Time Hardware Demonstrations

Advanced Materials, EarlyView.
Screen gate‐based transistors are presented, enabling tunable analog sigmoid and Gaussian activations. The SA‐transistor improves MRI classification accuracy, while the GA‐transistor supports precise Gaussian kernel tuning for forecasting. Both functions are implemented in a single device, offering compact, energy‐efficient analog AI processing ...
Junhyung Cho, Youngmin Han, Won Woo Lee, Youngwoo Yoo, Kannan Udaya Mohanan, Chang‐Hyun Kim, Junhwan Choi, Young‐Joon Kim, Wonjun Shin, Hocheon Yoo   +9 more
wiley   +1 more source

Theoretico-experimental analysis of bistability in the oscillatory response of a TaOx ReRAM to pulse train stimuli

Frontiers in Nanotechnology
Fading memory is the capability of a physical system to approach a unique asymptotic behaviour, irrespective of the initial conditions, when stimulated by an input from a certain class.
N. Schmitt, A. Ascoli, I. Messaris, A. S. Demirkol, S. Menzel, V. Rana, R. Tetzlaff, L. O. Chua   +7 more
doaj   +1 more source