Results 1 to 10 of about 9,484 (216)

A Relaxed Quantization Training Method for Hardware Limitations of Resistive Random Access Memory (ReRAM)-Based Computing-in-Memory [PDF]

IEEE Journal on Exploratory Solid-State Computational Devices and Circuits, 2020
Nonvolatile computing-in-memory (nvCIM) exhibits high potential for neuromorphic computing involving massive parallel computations and for achieving high energy efficiency.
Wei-Chen Wei, Chuan-Jia Jhang, Yi-Ren Chen, Cheng-Xin Xue, Syuan-Hao Sie, Jye-Luen Lee, Hao-Wen Kuo, Chih-Cheng Lu, Meng-Fan Chang, Kea-Tiong Tang   +9 more
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Implementation of binarized neural networks immune to device variation and voltage drop employing resistive random access memory bridges and capacitive neurons [PDF]

Communications Engineering
Resistive Random Access Memories (ReRAM) arrays provides a promising basement to deploy neural network accelerators based on near or in memory computing.
Mona Ezzadeen, Atreya Majumdar, Olivier Valorge, Niccolo Castellani, Valentin Gherman, Guillaume Regis, Bastien Giraud, Jean-Philippe Noel, Valentina Meli, Marc Bocquet, Francois Andrieu, Damien Querlioz, Jean-Michel Portal   +12 more
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Resistive Random Access Memory (ReRAM)

International Journal of Research and Engineering, 2019
Resistive Random-Access Memory (ReRAM) technology has been viewed as one of the most reliable non-volatile memories that have are emerging in markets. In this research paper, the revolution of ReRAM will be analyzed. Also, the paper will also review the recent progress in the technological development of ReRAM.
Muthu Dayalan
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The Spectral Response of the Dual Microdisk Resonator Based on BaTiO₃ Resistive Random Access Memory

Micromachines, 2022
With the resistive random access memory (ReRAM) devices based on the Al/BaTiO3 (BTO)/ITO structure fabricated at hand, by cross-analyzing the resistive memory characteristics in terms of various barium titanate (BTO) film thicknesses, it is found that ...
Ricky Wenkuei Chuang, Bo-Liang Liu, Cheng-Liang Huang   +2 more
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Exploring resistive switching in flexible, forming-free Ti/NiO/AZO/PET memory device for future wearable electronics [PDF]

Scientific Reports
Resistive Random Access Memory (ReRAM) is an emerging class of non-volatile memory that stores data by altering the resistance of a material within a memory cell.
Adiba Adiba, Ph Nonglen Meitei, Tufail Ahmad   +2 more
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A Fully Integrated System‐on‐Chip Design with Scalable Resistive Random‐Access Memory Tile Design for Analog in‐Memory Computing

Advanced Intelligent Systems, 2022
As the demands of big data applications and deep learning continue to rise, the industry is increasingly looking to artificial intelligence (AI) accelerators.
Fuxi Cai, She-Hwa Yen, Apurva Uppala, Luke Thomas, Tianchi Liu, Peter Fu, Xiaofeng Zhang, Ambrose Low, Deepak Kamalanathan, Joe Hsu, Buvna Ayyagari-Sangamalli   +10 more
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Growth of amorphous, anatase and rutile phase TiO2 thin films on Pt/TiO2/SiO2/Si (SSTOP) substrate for resistive random access memory (ReRAM) device application

Ceramics International, 2020
Abstract Memory structures play a basic role in providing integrated circuits of powerful processing capabilities. Even most powerful processors have nothing to offer without an accompanying memory and importantly, the development of mobile devices is dependent on the continual improvement of memory technology. Herein, we report the synthesis of TiO2
Alsaiari, Mabkhoot, Alhemiary, Nabil A., Umar, Ahmad, Hayden, Brian   +3 more
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A keyword-based approach to analyzing scientific research trends: ReRAM present and future [PDF]

Scientific Reports
Research trend analysis is a primary step in defining research structures and predicting research directions from scientific papers. Recently, due to millions of annual scientific publications, researchers demand analytical methods to interpret the ...
Hyeon Kim, Seong Hun Kim, Jaeseon Kim, Eun Ho Kim, Jun Hyeong Gu, Donghwa Lee   +5 more
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Medium-Temperature-Oxidized GeO x Resistive-Switching Random-Access Memory and Its Applicability in Processing-in-Memory Computing

Nanoscale Research Letters, 2022
Processing-in-memory (PIM) is emerging as a new computing paradigm to replace the existing von Neumann computer architecture for data-intensive processing. For the higher end-user mobility, low-power operation capability is more increasingly required and
Kannan Udaya Mohanan, Seongjae Cho, Byung-Gook Park   +2 more
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Application of ion-implantation for improved non-volatile resistive random access memory (ReRAM)

Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 2013
Resistive switching in transition metal oxides is believed to be controlled by the migration of oxygen vacancies and many interesting device structures employ substoichiometric oxide layers as a source of these active defects. However, the growth of thin (∼10 nm) oxide/suboxide heterostructures (e.g.
Elliman, Robert, Nawaz (Saleh), Muhammad, Kim, Tae-Hyun, Venkatachalam, Dinesh, Belay, Kidane, Ruffell, Simon, Kurunczi, P., England, J.   +7 more
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